Phototransistors PNZ102 (PN102) Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features High sensitivity 12.7 min. Wide spectral sensitivity, suited for detecting GaAs LEDs Low dark current : ICEO = 5 nA (typ.) 3-ø0.45±0.05 Fast response : tr, tf = 3 µs (typ.) 2.54±0.25 0± 1. Base pin for easy circuit design 1. 3˚ 0± 0. 45± 15 2 0. TO-18 standard type package 3 2 1 Absolute Maximum Ratings (Ta = 25˚C) Parameter 1: Emitter 2: Base 2: Collector ø5.75 max. Symbol Ratings Unit Collector to emitter voltage VCEO 30 V Collector to base voltage VCBO 40 V Emitter to collector voltage VECO 5 V Emitter to base voltage VEBO 5 V Collector current IC 50 mA Collector power dissipation PC 150 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol typ max 5 300 1.5 3.5 ICEO VCE = 10V Collector photo current ICE(L) VCE = 10V, L = 100 lx*1 Unit nA mA Peak sensitivity wave length λP VCE = 10V 800 nm Acceptance half angle θ Measured from the optical axis to the half power point 10 deg. tr, tf*2 VCC = 10V, ICE(L) = 5mA, RL = 100Ω Collector saturation voltage *2 min Dark current Response time *1 Conditions VCE(sat) ICE(L) = 1mA, L = 500 lx*1 µs 3 0.2 0.4 V Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT RL ;;;; ;; 50Ω (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) Note) The part number in the parenthesis shows conventional part number. 1 Phototransistors PNZ102 IC — VCE 20 80 30µA Ta = 25˚C 25µA 16 20µA 12 15µA PC = 150mW 8 10µA 4 40 IB = 5µA Ta = 25˚C T = 2856K 500 lx 1000 lx ICE(L) (mA) IC (mA) 120 Collector current PC (mW) Collector power dissipation 160 ICE(L) — VCE 20 Collector photo current PC — Ta 200 16 400 lx 300 lx 12 PC = 150mW 200 lx 8 150 lx 100 lx 4 L = 50 lx 0 – 20 0 20 40 60 80 0 100 Ambient temperature Ta (˚C ) 0 10 10 –1 10 10 10 2 VCE = 10V T = 2856K ICE(L) (mA) 10 2 10 1 Illuminance L (lx) 0 40 80 L = 500 lx 200 lx 10 100 lx 1 – 40 120 Ambient temperature Ta (˚C ) Spectral sensitivity characteristics 0 40 80 tr — ICE(L) Directivity characteristics 10 3 VCC = 10V Ta = 25˚C 40 400 600 800 1000 Wavelength λ (nm) 2 tr (µs) 10 2 60 40 RL = 1kΩ 500Ω 10 100Ω 1 20 20 0 200 80 Rise time S (%) 60 Relative sensitivity Relative sensitivity S (%) Ta = 25˚C 80 120 Ambient temperature Ta (˚C ) 100 100 30 ICE(L) — Ta 10 2 VCE = 10V 10 –1 – 40 10 3 20 Collector to emitter voltage VCE (V) Collector photo current ICEO (nA) 1 Dark current ICE(L) (mA) Collector photo current 10 3 VCE = 10V Ta = 25˚C T = 2856K 1 0 ICEO — Ta 10 10 –2 30 Collector to emitter voltage VCE (V) ICE(L) — L 10 2 20 0 0 30 20 10 Angle 0 10 θ (deg.) 20 30 10 –1 10 –1 1 10 10 2 Collector photo current ICE(L) (mA) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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