PIN Photodiodes PNZ303 (PN303) PIN Photodiode Unit : mm ø9.4 max. ø8.1±0.2 ø5.9±0.2 12.7 min. 3.5 max. For optical control systems Features Fast response which is well suited to high speed modulated light detection : tr, tf = 50 ns (typ.) High photodetection sensitivity and wide dynamic sensitivity Glass window 2-ø0.45±0.1 1 2 5.08±0.5 0. 8 Peak sensitivity wave length is 900 nm and wide spectral sensitivity Wide photodetection area and wide directional angle 45° 8 0. Highly reliable TO-5 standard type package Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit VR 30 V Reverse voltage (DC) Power dissipation PD 100 mW Operating ambient temperature Topr – 30 to +100 ˚C Storage temperature Tstg – 40 to +100 ˚C 1: Anode 2: Cathode Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Dark current *1 *2 ID Conditions min VR = 10V typ max Unit 5 50 nA Photo current IL VR = 10V, L = 1000 70 µA Peak sensitivity wavelength λP VR = 10V 900 nm VR = 10V, RL = 1kΩ 50 ns VR = 10V, RL = 100kΩ 5 µs *2 Response time tr, tf Response time tr, tf*2 lx*1 50 Capacitance between pins Ct VR = 0V, f = 1MHz 70 pF Acceptance half angle θ Measured from the optical axis to the half power point 55 deg. Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit Sig.IN VR = 10V (Input pulse) λP = 800nm Sig.OUT ;;;; ;;;; (Output pulse) 50Ω 90% 10% RL td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) Note) The part number in the parenthesis shows conventional part number. 1 PIN Photodiodes PNZ303 60 40 VR = 10V Ta = 25˚C T = 2856K 1000 100 VO (mV) VR = 10V 10 2 120 0V 10 Open voltage IL (µA) 80 Photo current Power dissipation PD (mW) 100 VO, ISC — L 1200 1 20 40 60 80 10 –1 10 100 ID — Ta 10 2 10 3 400 0 10 4 60 40 VO 20 0 200 VR = 10V Relative open voltage VO (%) Relative photo current IP (%) 10 2 10 1 600 0 1000 1200 800 Spectral sensitivity characteristics IP – Ta Condition VR = 10V L = 1000 lx T = 2856K 120 IP 100 80 VO 60 400 Illuminance L (lx) VO, IP — Ta 160 140 ID (nA) ISC 600 Illuminance L (lx) 100 S (%) 20 Relative sensitivity 0 Ambient temperature Ta (˚C ) Dark current 80 200 0 – 30 10 3 800 40 VR = 10V Ta = 25˚C 80 60 40 20 20 0 20 40 60 80 0 – 40 100 0 40 20 400 600 80 40 0 40 Angle θ (deg.) 2 80 1000 1200 tr , tf — RL 10 tr , tf (µs) f = 1MHz Ta = 25˚C 80 1 60 40 20 10 –1 Sig.IN 10 –2 0 10 –2 10 –1 1 10 Reverse voltage VR (V) 10 2 VR=10V Sig. OUT RL 50Ω 0 800 Wavelength λ (nm) Rise time, Fall time Ct (pF) Capacitance between pins S (%) 100 60 0 200 120 Ct — V R Directivity characteristics 100 80 80 Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) Relative sensitivity 40 ;; 10 –1 – 40 – 20 10 –3 10 –1 1 tr 10 td 90% 10% tf 10 2 External load resistance RL (kΩ) ISC (µA) IL — L 10 3 Short Circuit Current PD — Ta 120 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. 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