Phototransistors PNZ107, PNZ108 (PN107, PN108) Silicon NPN Phototransistors PNZ107 Unit : mm 4.6 0.15 Glass lens 6.3 0.3 For optical control systems Features Narrow directional sensitivity for effective use of light input Fast response : tr = 5 µs (typ.) 12.7 min. High sensitivity : ICE(L) = 5 mA (min.) (at L = 100 lx) 2- 0.45 0.05 Signal mixing capability using base pin (PNZ0108) 2.54 0.25 0 1. TO-18 standard type package 1. 3 0 45 0. 15 2 0. 2 1 Absolute Maximum Ratings (Ta = 25˚C) Unit Collector to emitter voltage VCEO 20 V * 30 V 3 V Collector to base voltage VCBO Emitter to collector voltage VECO Emitter to base voltage VEBO* 5 V IC 30 mA PC 150 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C Unit : mm 4.6 0.15 Glass lens 3- 0.45 0.05 PNZ108 only 2.54 0.25 0 1. 3 0 0. 45 15 2 0. 1. * Collector power dissipation PNZ108 6.3 0.3 Ratings 12.7 min. Symbol Collector current 1: Emitter 2: Collector 5.75 max. Parameter 3 2 1 5.75 max. 1: Emitter 2: Base 3: Collector Note) The part numbers in the parenthesis show conventional part number. 1 Phototransistors PNZ107, PNZ108 Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Dark current Conditions ICEO Collector photo current ICE(L) Peak sensitivity wavelength VCE = 10V, L = 100 Measured from the optical axis to the half power point 10 deg. VCC = 10V, ICE(L) = 5mA 5 µs *2 RL = 100Ω 0.3 Switching time measurement circuit VCC (Output pulse) ;;;; ;; 90% 10% td tr tf PC — Ta ICE(L) — VCE 20 40 ICE(L) (mA) 30 0 l 20 x 0 lx 0 50 10 = 12 100 lx Collector photo current 80 00 lx 120 VCE = 10V Ta = 25˚C T = 2856K lx Ta = 25˚C T = 2856K 16 V ICE(L) — L 10 3 L ICE(L) (mA) 160 Collector photo current Collector power dissipation PC (mW) 200 0.6 td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) (Input pulse) RL µs 6 ICE(L) = 1mA, L = 500 lx*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. 8 50 lx 4 10 2 10 1 10 lx 0 – 20 0 20 40 60 80 Ambient temperature Ta (˚C ) 2 mA θ VCE(sat) Sig.OUT 15 nm *2 50Ω µA 5 *1 Sig.IN Unit 2 900 tf Collector saturation voltage max VCE = 10V tr*2 Fall time lx*1 typ 0.05 λP Acceptance half angle Rise time min VCE = 10V 100 0 0 4 8 12 16 20 24 Collector to emitter voltage VCE (V) 10 –1 1 10 10 2 Illuminance L (lx) 10 3 PNZ107, PNZ108 Phototransistors ICEO — Ta ICE(L) — Ta 10 2 10 2 VCE = 10V L = 100 lx T = 2856K 10 –2 0 20 40 Ambient temperature 60 80 10 1 – 40 100 Ta (˚C ) 10˚ 50 60 40 80 0 200 120 40˚ 40 50˚ 30 60˚ 400 600 800 1000 1200 Wavelength λ (nm) Ta (˚C ) tf — ICE(L) VCC = 10V Ta = 25˚C VCC = 10V Ta = 25˚C 10 4 10 3 10 3 tf (µs) 60 30˚ tr (µs) 70 40 10 4 Rise time 90 80 tr — ICE(L) 20˚ 100 80 0 Ambient temperature Directivity characteristics 0˚ VCE = 10V Ta = 25˚C 20 10 2 RL = 1kΩ Fall time 10 –3 – 20 Relative sensitivity Collector photo current 10 –1 Relative sensitivity S(%) ICEO (µA) Dark current 1 S (%) ICE(L) (mA) VCE = 10V 10 Spectral sensitivity characteristics 100 500Ω 10 100Ω 10 2 RL = 1kΩ 500Ω 10 100Ω 70˚ 80˚ 1 1 90˚ 10 –1 10 –2 10 –1 1 Collector photo current 10 10 2 ICE(L) (mA) 10 –1 10 –2 10 –1 1 Collector photo current 10 10 2 ICE(L) (mA) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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