ETC BFP690

BFP690
NPN Silicon Germanium RF Transistor
4
Preliminary data
5
For medium power amplifiers
Maxim. available Gain Gma = 17 dB at 1.8 GHz
3
Gold metallization for high reliability
2
70 GHz fT - Silicon Germanium technology
1
VPW05980
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFP690
Marking
R9s
1=B
Pin Configuration
2=E
3=C
4=C
5=E
Package
-
SCT595
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
4
Collector-emitter voltage
VCES
13
Collector-base voltage
VCBO
13
Emitter-base voltage
VEBO
1.2
Collector current
IC
350
Base current
IB
20
Total power dissipation1)
Ptot
1000
mW
Junction temperature
Tj
150
°C
Ambient temperature
TA
-65 ... 150
Storage temperature
Tstg
-65 ... 150
V
mA
TS 80°C
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point2)
RthJS
60
K/W
1T is measured on the collector lead at the soldering point to the pcb
S
2For calculation of R
please refer to Application Note Thermal Resistance
thJA
1
Oct-30-2002
BFP690
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)CEO
4
4.5
-
V
ICBO
-
-
100
nA
IEBO
-
-
10
µA
hFE
100
180
250
-
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0 A
Collector-base cutoff current
VCB = 5 V, IE = 0 A
Emitter-base cutoff current
VEB = 0.5 V, IC = 0 A
DC current gain
IC = 200 mA, VCE = 3 V
2
Oct-30-2002
BFP690
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
fT
Unit
-
37
-
GHz
Ccb
-
0.6
-
pF
Cce
-
1.25
-
Ceb
-
3
-
I C = 200 mA, V CE = 3 V, f = 0.5 GHz
Collector-base capacitance
VCB = 3 V, f = 1 MHz
Collector emitter capacitance
VCE = 3 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Noise figure
dB
F
I C = 35 mA, VCE = 3 V, f = 1.8 GHz, ZS = Z Sopt
I C = 35 mA, VCE = 3 V, f = 3 GHz, ZS = Z Sopt
Power gain, maximum available 1)
-
1
-
-
1.2
-
-
17.5
-
-
13
-
Gma
I C = 200 mA, V CE = 3 V, Z S = ZSopt,
Z L = ZLopt, f = 1.8 GHz
I C = 200 mA, V CE = 3 V, Z S = ZSopt,
Z L = ZLopt, f = 3 GHz
|S21e|2
Transducer gain
dB
I C = 200 mA, V CE = 3 V, Z S = ZL = 50 ,
f = 1.8 GHz
-
11
-
I C = 200 mA, V CE = 3 V, Z S = ZL = 50 ,
f = 3 GHz
-
6.5
-
IP3
-
29
-
P-1dB
-
19.5
-
Third order intercept point at output 2)
dBm
VCE = 3 V, IC = 200 mA, f = 1.8 GHz,
Z S = ZL = 50 1dB Compression point at output
I C = 200 mA, V CE = 3 V, Z S = ZL = 50 ,
f = 1.8 GHz
1G
1/2
ma = |S21 / S12| (k-(k²-1) )
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50 from 0.1 MHz to 6 GHz
3
Oct-30-2002
BFP690
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transitor Chip Data:
IS =
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
AF =
TITF1
1.41
1000
2
2
1.8
0.3836
1.592
1.9
2.9
0.6
0.2
0.27
3
fA
-
2
-0.0065
-
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
NK =
FC =
KF =
TITF2
V
-
fF
ps
A
V
ns
-
450
0.9
40
45
0.4442
0.14
0.8
5
0
0.5
688.1
-1.42
0.8
1.046E-11
1.0E-5
A
mA
V
deg
fF
-
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
1.025
145
1
1.2
10.61
0.4312
0.3
0.6
477.5
1
0.6
1.078
298
fA
pA
mA
V
fF
V
eV
K
All parameters are ready to use, no scalling is necessery. Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil- und Satellitentechnik (IMST)
Package Equivalent Circuit:
R C B S
C B C C
L C C
C
B F P 6 9 0 _ C h ip
S
B
B
L B B
L B C
R C C S
C B E C
L C B
E
R C E S
L E C
L E B
C C E O
T =
2 5 °C
Itf = 2 9 0 0 * ( 1 - 6 .5 e -3 * (T -2 5 ) + 1 .0 e -5 * (T -2 5 )^ 2 )
E
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http//www.infineon.com/silicondiscretes
C
LBC =
LCC =
LEC =
LBB =
LCB =
LEB =
CBEC =
CBCC =
CES =
CBS =
CCS =
CCEO =
RBS =
RCS =
RES =
15
4
4
900
700
130
864.4
399.9
450
535
135
130
190
340
340
pH
pH
pH
pH
pH
pH
fF
fF
fF
fF
fF
fF
Valid up to 6GHz
4
Oct-30-2002
BFP690
Total power dissipation Ptot = (TS )
Permissible Pulse Load RthJS = (tp )
10 2
1100
mW
900
K/W
RthJS
P tot
800
700
600
10 1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
500
400
300
200
100
0
0
15
30
45
60
75
90 105 120 °C
10 0 -7
10
150
10
-6
10
-5
10
-4
10
-3
10
-2
TS
°C
10
0
tp
Permissible Pulse Load
Collector-base capacitance Ccb = (VCB )
Ptotmax/PtotDC = (tp)
f = 1MHz
10 2
2
1.6
-
1.4
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
CCB
Ptotmax/ PtotDC
pF
1.2
1
0.8
0.6
0.4
0.2
10 0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
0
0
tp
2
4
6
8
10
V
13
VCB
5
Oct-30-2002
BFP690
Transition frequency fT = (IC)
Power Gain Gma , Gms = (f),
f = 0.5GHz
|S21|² = f (f)
VCE = parameter in V
VCE = 3V, IC = 200mA
45
55
dB
GHz
45
35
40
30
35
G
fT
3 to 4
25
30
Gms
25
20
20
15
2
15
10
10
0
0.7
50
100
150
200
250
300 mA
|S21|²
5
1
5
0
0
Gma
-5
0
400
1
2
3
GHz
4
IC
6
f
Power gain Gma, Gms = (IC )
Power gain Gma, Gms = (VCE )
VCE = 3V
IC = 200mA
f = parameter
f = parameter in GHz
28
dB
30
dB
24
0.9
0.9
22
20
18
1.8
16
2.4
15
3
2.4
14
4
3
12
10
4
8
5
10
5
6
5
6
6
4
0
1.8
G
G
20
50
100
150
200
250
300 mA
0
0.5
400
IC
1
1.5
2
2.5
3
3.5
V
4.5
VCE
6
Oct-30-2002