BFR93AT NPN Silicon RF Transistor Preliminary data 3 For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR93AT Marking R2s 1=B Pin Configuration 2=E 3=C Package SC75 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 50 Base current IB 6 Total power dissipation Ptot 300 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 RthJS 215 Value Unit V mA TS 85°C 1) Thermal Resistance Junction - soldering point 2) K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Aug-09-2001 BFR93AT Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 12 - - V ICES - - 100 µA ICBO - - 100 nA IEBO - - 10 µA hFE 50 100 200 - DC characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V 2 Aug-09-2001 BFR93AT Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 4.5 6 - Ccb - 0.58 0.9 Cce - 0.22 - Ceb - 1.7 - AC characteristics (verified by random sampling) Transition frequency fT GHz IC = 30 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure dB F IC = 5 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz - 2 - f = 1.8 GHz - 3.3 - IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz - 15.5 - f = 1.8 GHz - 10 - - 13.5 - - 7.5 - Power gain, maximum available 1) Gma |S21e|2 Transducer gain IC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz 1G ma = |S21 / S12 | (k-(k2-1)1/2 ) 3 Aug-09-2001 BFR93AT SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 8.6752 fA BF = 137.63 - NF = 0.93633 - VAF = 20.011 V IKF = 0.33395 A ISE = 2619.3 fA NE = 1.5466 - BR = 59 - NR = 0.88761 - VAR = 26.834 V IKR = 0.015129 A ISC = 0.70823 fA NC = 1.95 - RB = 7.2326 IRB = 0.043806 mA RBM = 3.4649 RE = 1.0075 RC = 0.13193 CJE = 3.1538 fF VJE = 0.70393 V MJE = 0.5071 - TF = 33.388 ps XTF = 0.28319 - VTF = 0.17765 V ITF = 2.5184 mA PTF = 0 deg CJC = 1039.5 fF VJC = 0.72744 V MJC = 0.34565 - XCJC = 0.21422 - TR = 1.1061 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.75935 - TNOM 300 K L1 = 0.762 nH L2 = 0.706 nH L3 = 0.382 nH C1 = 62 fF C2 = 84 fF C3 = 180 fF C4 = 7 C5 = 40 fF C7 = 48 fF All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: C4 C1 L2 B Transistor Chip B’ C’ L3 C E’ C6 C2 L1 C5 C3 E EHA07524 Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 4 Aug-09-2001 BFR93AT Total power dissipation Ptot = f (TS ) 350 mW P tot 250 TS 200 150 100 50 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load Permissible Pulse Load RthJS = f (tp ) Ptotmax/P totDC = f (tp) 10 2 Ptotmax / PtotDC RthJS 10 3 10 2 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 -3 10 -2 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 Aug-09-2001 BFR93AT Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) f = 1MHz V CE = Parameter 1.4 7 pF 8V GHz 5V 3V 2V 5 fT Ccb 1 0.8 4 0.6 3 0.4 2 0.2 1 0 0 5 10 V 15 0 0 25 1V 10 20 30 40 mA VCB 60 IC Power Gain Gma , Gms = f(IC ) Power Gain Gma, Gms = f(I C) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 19 12 8V 5V dB dB 8V 2V G ma G 5V 3V 3V 2V 13 6 1V 10 3 1V 7 0 10 20 30 40 mA 0 0 60 IC 10 20 30 40 mA 60 IC 6 Aug-09-2001 BFR93AT Power Gain Gma , Gms = f(VCE):_____ Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) |S21|2 = f(VCE):--------- VCE = Parameter, f = 900MHz f = Parameter 35 18 IC=30mA dB 0.9GHz dBm 0.9GHz 14 12 IP 3 5V G 1.8GHz 4V 25 10 3V 1.8GHz 8 2V 20 6 4 15 2 1V 0 0 3 V 6 10 0 12 10 20 30 mA 40 VCE IC Power Gain |S21|2= f(f) Power Gain Gma , Gms = f(f) V CE = Parameter VCE = Parameter 45 36 IC=30mA dB 60 IC =30mA dBm 35 24 G S21 30 18 25 8V 5V 3V 2V 1V 20 15 8V 5V 3V 2V 1V 12 6 10 0 5 0 0 1 2 3 4 5 GHz -6 0 7 f 1 2 3 4 5 GHz 7 f 7 Aug-09-2001