BFP136W NPN Silicon RF Transistor 3 For power amplifier in DECT and PCN systems 4 fT = 5.5GHz Gold metalization for high reliability 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP136W PAs Pin Configuration 1=E 2=C 3=E Package 4=B SOT343 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 150 Base current IB 20 Total power dissipation Ptot 1000 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Value Unit V mA TS 60°C 1) Thermal Resistance Junction - soldering point 2) RthJS 90 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Jun-22-2001 BFP136W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 12 - - V ICES - - 100 µA ICBO - - 50 nA IEBO - - 1 µA hFE 50 100 200 DC characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain - IC = 80 mA, VCE = 5 V 2 Jun-22-2001 BFP136W Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter Unit min. typ. max. fT 4 5.5 - Ccb - 1.7 2.5 Cce - 0.7 - Ceb - 6.8 - AC characteristics (verified by random sampling) Transition frequency GHz IC = 80 mA, VCE = 5 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure dB F IC = 30 mA, VCE = 5 V, ZS = ZSopt , f = 900 MHz - 2 - f = 1.8 GHz - 3.3 - IC = 80 mA, VCE = 5 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz - 15.5 - f = 1.8 GHz - 9.5 - - 9 - - 3 - - 33 - Power gain, maximum available 1) Gma |S21e|2 Transducer gain IC = 80 mA, VCE = 5 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz Third order intercept point IP3 dBm IC = 80 mA, VCE = 5 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz 1G ma = |S21 / S12 | (k-(k2-1)1/2) 3 Jun-22-2001 BFP136W SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 1.5813 fA BF = 113.32 - NF = 1.0653 - VAF = 12.331 V IKF = 1.4907 A ISE = 46.37 fA NE = 1.4254 - BR = 86.717 - NR = 1.8047 - VAR = 31.901 V IKR = 0.033605 A ISC = 0.0080864 fA NC = 1.8821 - RB = 0 IRB = 0.83992 mA RBM = 1.0078 RE = 0.22081 RC = 0.01636 CJE = 33.904 fF VJE = 0.71518 V MJE = 0.36824 - TF = 20.691 ps XTF = 0.31338 - VTF = 0.10174 V ITF = 4.5579 mA PTF = 0 deg CJC = 2977.4 fF VJC = 1.1381 V MJC = 0.31461 - XCJC = 0.02899 - TR = 1.0033 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.99886 - TNOM 300 K L BI = 0.5 nH L BO = 0.51 nH L EI = 0.18 nH L EO = 0.14 nH L CI = 0.05 nH L CO = 0.35 nH C BE = 78 fF C CB = 48 fF C CE = 244 fF All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm 4 Jun-22-2001 BFP136W Total power dissipation Ptot = f (TS ) 1200 mW 1000 P tot 900 800 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load Permissible Pulse Load RthJS = f (tp ) Ptotmax/P totDC = f (tp) 10 2 Ptotmax / PtotDC 10 2 RthJS K/W 10 1 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 Jun-22-2001 BFP136W Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) f = 1MHz V CE = Parameter 3.0 7.0 GHz 8V 6.0 pF 5V 3V 5.5 2V 2.0 fT Ccb 5.0 4.5 4.0 1.5 1V 3.5 0.7V 3.0 2.5 1.0 2.0 1.5 0.5 1.0 0.5 0.0 0 2 4 6 8 V 0.0 0 11 20 40 60 80 100 120 VCB 140 mA 170 IC Power Gain Gma , Gms = f(IC ) Power Gain Gma, Gms = f(I C) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 12 18 dB dB 10V 10 3V 14 2V 10V 9 3V 2V 8 G G 12 1V 7 10 6 1V 0.7V 8 5 4 6 0.7V 3 4 2 2 0 0 1 20 40 60 80 100 120 0 0 140 mA 170 IC 20 40 60 80 100 120 140 mA 170 IC 6 Jun-22-2001 BFP136W Power Gain Gma , Gms = f(VCE):_____ Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) |S21|2 = f(VCE):--------- VCE = Parameter, f = 900MHz f = Parameter 40 18 IC=80mA 8V dB 0.9GHz dBm 5V 14 G IP 3 12 30 3V 0.9GHz 10 25 1.8GHz 2V 8 20 6 1V 4 15 2 0 0 2 4 6 V 8 10 0 12 20 40 60 80 100 120 mA VCE IC Power Gain |S21|2= f(f) Power Gain Gma , Gms = f(f) V CE = Parameter VCE = Parameter 30 34 dB 160 IC=80mA dB IC =80mA 24 28 20 G G 24 20 16 12 16 8 12 4 8 10V 10V 0 2V 1V 1V 4 -4 0.7V 0 0.0 0.5 1.0 1.5 2.0 2.5 GHz 0.7V -8 0.0 3.5 f 0.5 1.0 1.5 2.0 2.5 GHz 3.5 f 7 Jun-22-2001