BFR181T NPN Silicon RF Transistor Preliminary data 3 For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR181T Marking RFs 1=B Pin Configuration 2=E 3=C Package SC75 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 20 Base current IB 2 Total power dissipation Ptot 175 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 RthJS 405 Value Unit V mA TS 79°C 1) Thermal Resistance Junction - soldering point 2) K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Aug-09-2001 BFR181T Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 12 - - V ICES - - 100 µA ICBO - - 100 nA IEBO - - 1 µA hFE 50 100 200 DC characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain - IC = 5 mA, VCE = 8 V 2 Aug-09-2001 BFR181T Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter Unit min. typ. max. fT 6 8 - Ccb - 0.26 0.4 Cce - 0.17 - Ceb - 0.3 - AC characteristics (verified by random sampling) Transition frequency GHz IC = 10 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure dB F IC = 2 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz - 1.45 - f = 1.8 GHz - 1.8 - Gms - 19.5 - Gma - 13.5 - f = 900 MHz - 15.5 - f = 1.8 GHz - 10.5 - Power gain, maximum stable 1) IC = 5 mA, VCE = 8 V, ZS = ZSopt , ZL = ZLopt , f = 900 MHz Power gain, maximum available 2) IC = 5 mA, VCE = 8 V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz |S21e|2 Transducer gain IC = 5 mA, VCE = 8 V, ZS = ZL = 50 , 1G ms 2G ma = |S21 / S12 | = |S21 / S12 | (k-(k2-1)1/2) 3 Aug-09-2001 BFR181T SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 0.0010519 fA BF = 96.461 - NF = 0.90617 - VAF = 22.403 V IKF = 0.12146 A ISE = 12.603 fA NE = 1.7631 - BR = 16.504 - NR = 0.87757 - VAR = 5.1127 V IKR = 0.24951 A ISC = 0.01195 fA NC = 1.6528 - RB = 9.9037 IRB = 0.69278 mA RBM = 6.6315 RE = 2.1372 RC = 2.2171 CJE = 1.8168 fF VJE = 0.73155 V MJE = 0.43619 - TF = 17.028 ps XTF = 0.33814 - VTF = 0.12571 V ITF = 1.0549 mA PTF = 0 deg CJC = 319.69 fF VJC = 1.1633 V MJC = 0.30013 - XCJC = 0.082903 - TR = 2.7449 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.99768 - TNOM 300 K L1 = 0.762 nH L2 = 0.706 nH L3 = 0.382 nH C1 = 62 fF C2 = 84 fF C3 = 180 fF C4 = 7 C5 = 40 fF C6 = 48 fF All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: C4 C1 L2 B Transistor Chip B’ C’ L3 C E’ C6 C2 L1 C5 C3 E EHA07524 Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 4 Aug-09-2001 BFR181T Total power dissipation Ptot = f (TS ) 200 mW 160 P tot 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load Permissible Pulse Load RthJS = f (tp ) Ptotmax/P totDC = f (tp) 10 2 RthJS Ptotmax / PtotDC 10 3 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 Aug-09-2001 BFR181T Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) f = 1MHz V CE = Parameter 9 0.4 10V GHz pF 8V 7 5V 6 0.25 fT Ccb 0.3 5 3V 0.2 4 2V 0.15 3 0.1 0.05 0 0 1V 0.7V 2 1 5 10 15 V 0 0 25 5 mA 10 VCB 20 IC Power Gain Gma , Gms = f(IC ) Power Gain Gma, Gms = f(I C) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 22 15 10V 5V 10V 5V dB dB 3V G ma G 3V 16 2V 9 2V 13 6 1V 1V 10 3 0.7 0.7V 7 0 4 8 12 mA 0 0 20 IC 4 8 12 mA 20 IC 6 Aug-09-2001 BFR181T Power Gain Gma , Gms = f(VCE):_____ Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) |S21|2 = f(VCE):--------- VCE = Parameter, f = 900MHz f = Parameter 22 22 8V IC=5mA dB dBm 0.9GHz 5V 18 16 IP 3 G 3V 0.9GHz 2V 1.8GHz 14 14 10 1V 12 6 1.8GHz 10 2 8 6 0 3 V 6 -2 0 12 5 mA 10 20 VCE IC Power Gain |S21|2= f(f) Power Gain Gma , Gms = f(f) V CE = Parameter VCE = Parameter 45 25 IC=5mA dB IC =5mA dBm 35 G S21 30 15 25 10 20 15 5 10V 10V 5V 1V 10 5 0 0 1 2 3 4 5 GHz 5V 0 -5 0 7 f 1V 1 2 3 4 5 GHz 7 f 7 Aug-09-2001