INFINEON BFP196

BFP196
NPN Silicon RF Transistor
3
For low noise, low distortion broadband
amplifiers in antenna and telecommunications
4
systems up to 1.5 GHz at collector currents from
20 mA to 80 mA
2
Power amplifier for DECT and PCN systems
fT = 7.5 GHz
1
VPS05178
F = 1.5 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
BFP196
RIs
Pin Configuration
1=C
2=E
3=B
Package
4=E
SOT143
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
12
Collector-emitter voltage
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
2
Collector current
IC
100
Base current
IB
12
Total power dissipation
Ptot
700
mW
Junction temperature
Tj
150
°C
Ambient temperature
TA
-65 ... 150
Storage temperature
Tstg
-65 ... 150
Value
Unit
V
mA
TS 77 °C 1)
Thermal Resistance
Junction - soldering point 2)
RthJS
105
K/W
1T is measured on the collector lead at the soldering point to the pcb
S
2For calculation of R
please refer to Application Note Thermal Resistance
thJA
1
Jun-22-2001
BFP196
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
12
-
-
V
ICES
-
-
100
µA
ICBO
-
-
100
nA
IEBO
-
-
1
µA
hFE
50
100
200
DC characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
-
IC = 50 mA, VCE = 8 V
2
Jun-22-2001
BFP196
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
fT
5
7.5
-
Ccb
-
0.97
1.4
Cce
-
0.3
-
Ceb
-
3.7
-
AC characteristics (verified by random sampling)
Transition frequency
GHz
IC = 70 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
pF
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Noise figure
dB
F
IC = 20 mA, VCE = 8 V, ZS = ZSopt ,
f = 900 MHz
-
1.5
-
f = 1.8 GHz
-
2.5
-
IC = 50 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 900 MHz
-
16
-
f = 1.8 GHz
-
10
-
-
12.5
-
-
6.5
-
Power gain, maximum available 1)
Gma
|S21e|2
Transducer gain
IC = 50 mA, VCE = 8 V, ZS = ZL = 50 ,
f = 900 MHz
f = 1.8 GHz
1G
ma
= |S21 / S12 | (k-(k2-1)1/2 )
3
Jun-22-2001
BFP196
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
1.7264
fA
BF =
125
-
NF =
0.80012
-
VAF =
20
V
IKF =
0.4294
A
ISE =
119.22
fA
NE =
1.1766
-
BR =
10.584
-
NR =
0.94288
-
VAR =
3.8128
V
IKR =
0.019511
A
ISC =
4.8666
fA
NC =
0.88299
-
RB =
1.2907
IRB =
0.084011
mA
RBM =
1
RE =
0.75103
RC =
0.27137
CJE =
13.325
fF
VJE =
0.7308
V
MJE =
0.33018
-
TF =
23.994
ps
XTF =
0.44322
-
VTF =
0.1
V
ITF =
1.9775
mA
PTF =
0
deg
CJC =
1667
fF
VJC =
0.73057
V
MJC =
0.3289
-
XCJC =
0.29998
-
TR =
2.2413
ns
CJS =
0
fF
VJS =
0.75
V
MJS =
0
-
XTB =
0
-
EG =
1.11
eV
XTI =
3
-
FC =
0.50922
-
TNOM
300
K
L BI =
0.84
nH
L BO =
0.65
nH
L EI =
0.31
nH
L EO =
0.14
nH
L CI =
0.07
nH
L CO =
0.42
nH
C BE =
145
fF
C CB =
19
fF
C CE =
281
fF
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
Package Equivalent Circuit:
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales
office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm
4
Jun-22-2001
BFP196
Total power dissipation Ptot = f (TS )
800
mW
P tot
600
500
400
300
200
100
0
0
20
40
60
80
100
120 °C
150
TS
Permissible Pulse Load
Permissible Pulse Load RthJS = f (tp )
Ptotmax/P totDC = f (tp)
10 2
Ptotmax / PtotDC
10 3
RthJS
K/W
10 2
-
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 1
10 0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
10 0 -7
10
0
tp
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
5
Jun-22-2001
BFP196
Collector-base capacitance Ccb = f (VCB )
Transition frequency f T = f (I C)
f = 1MHz
V CE = Parameter
8.0
1.8
10V
pF
GHz
3V
1.4
6.0
2V
1.2
fT
Ccb
5V
5.0
1.0
4.0
1V
0.8
3.0
0.7V
0.6
2.0
0.4
1.0
0.2
0.0
0
4
8
12
16
V
0.0
0
22
20
40
60
80
mA
VCB
120
IC
Power Gain Gma , Gms = f(IC )
Power Gain Gma, Gms = f(I C)
f = 0.9GHz
f = 1.8GHz
VCE = Parameter
VCE = Parameter
10
18
10V
dB
5V
3V
dB
10V
8
5V
3V
7
G
G
14
2V
2V
6
5
12
1V
4
10
1V
3
0.7V
2
8
0.7V
6
0
20
40
60
80
mA
1
0
0
120
IC
20
40
60
80
mA
120
IC
6
Jun-22-2001
BFP196
Power Gain Gma , Gms = f(VCE):_____
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50)
|S21|2 = f(VCE):---------
VCE = Parameter, f = 900MHz
f = Parameter
18
dB
36
IC=50mA
dBm
0.9GHz
8V
32
5V
14
30
0.9GHz
G
IP 3
12
3V
26
1.8GHz
10
28
24
2V
8
22
1.8GHz
6
20
18
4
1V
16
2
0
0
14
2
4
6
V
8
12
0
12
20
40
60
80
100 mA
130
IC
Power Gain |S21|2= f(f)
Power Gain Gma , Gms = f(f)
V CE = Parameter
VCE = Parameter
32
dB
32
IC=50mA
dB
24
S21
24
G
IC =50mA
20
20
16
16
12
12
8
8
10V
4
2V
1V
4
10V
0
2V
1V
0.7V
0.7V
0
0.0
0.5
1.0
1.5
2.0
2.5
GHz
-4
0.0
3.5
f
0.5
1.0
1.5
2.0
2.5
GHz
3.5
f
7
Jun-22-2001