BFP196 NPN Silicon RF Transistor 3 For low noise, low distortion broadband amplifiers in antenna and telecommunications 4 systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2 Power amplifier for DECT and PCN systems fT = 7.5 GHz 1 VPS05178 F = 1.5 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP196 RIs Pin Configuration 1=C 2=E 3=B Package 4=E SOT143 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 100 Base current IB 12 Total power dissipation Ptot 700 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Value Unit V mA TS 77 °C 1) Thermal Resistance Junction - soldering point 2) RthJS 105 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Jun-22-2001 BFP196 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 12 - - V ICES - - 100 µA ICBO - - 100 nA IEBO - - 1 µA hFE 50 100 200 DC characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain - IC = 50 mA, VCE = 8 V 2 Jun-22-2001 BFP196 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. fT 5 7.5 - Ccb - 0.97 1.4 Cce - 0.3 - Ceb - 3.7 - AC characteristics (verified by random sampling) Transition frequency GHz IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure dB F IC = 20 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz - 1.5 - f = 1.8 GHz - 2.5 - IC = 50 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz - 16 - f = 1.8 GHz - 10 - - 12.5 - - 6.5 - Power gain, maximum available 1) Gma |S21e|2 Transducer gain IC = 50 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz 1G ma = |S21 / S12 | (k-(k2-1)1/2 ) 3 Jun-22-2001 BFP196 SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 1.7264 fA BF = 125 - NF = 0.80012 - VAF = 20 V IKF = 0.4294 A ISE = 119.22 fA NE = 1.1766 - BR = 10.584 - NR = 0.94288 - VAR = 3.8128 V IKR = 0.019511 A ISC = 4.8666 fA NC = 0.88299 - RB = 1.2907 IRB = 0.084011 mA RBM = 1 RE = 0.75103 RC = 0.27137 CJE = 13.325 fF VJE = 0.7308 V MJE = 0.33018 - TF = 23.994 ps XTF = 0.44322 - VTF = 0.1 V ITF = 1.9775 mA PTF = 0 deg CJC = 1667 fF VJC = 0.73057 V MJC = 0.3289 - XCJC = 0.29998 - TR = 2.2413 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.50922 - TNOM 300 K L BI = 0.84 nH L BO = 0.65 nH L EI = 0.31 nH L EO = 0.14 nH L CI = 0.07 nH L CO = 0.42 nH C BE = 145 fF C CB = 19 fF C CE = 281 fF All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm 4 Jun-22-2001 BFP196 Total power dissipation Ptot = f (TS ) 800 mW P tot 600 500 400 300 200 100 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load Permissible Pulse Load RthJS = f (tp ) Ptotmax/P totDC = f (tp) 10 2 Ptotmax / PtotDC 10 3 RthJS K/W 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 Jun-22-2001 BFP196 Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) f = 1MHz V CE = Parameter 8.0 1.8 10V pF GHz 3V 1.4 6.0 2V 1.2 fT Ccb 5V 5.0 1.0 4.0 1V 0.8 3.0 0.7V 0.6 2.0 0.4 1.0 0.2 0.0 0 4 8 12 16 V 0.0 0 22 20 40 60 80 mA VCB 120 IC Power Gain Gma , Gms = f(IC ) Power Gain Gma, Gms = f(I C) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 10 18 10V dB 5V 3V dB 10V 8 5V 3V 7 G G 14 2V 2V 6 5 12 1V 4 10 1V 3 0.7V 2 8 0.7V 6 0 20 40 60 80 mA 1 0 0 120 IC 20 40 60 80 mA 120 IC 6 Jun-22-2001 BFP196 Power Gain Gma , Gms = f(VCE):_____ Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) |S21|2 = f(VCE):--------- VCE = Parameter, f = 900MHz f = Parameter 18 dB 36 IC=50mA dBm 0.9GHz 8V 32 5V 14 30 0.9GHz G IP 3 12 3V 26 1.8GHz 10 28 24 2V 8 22 1.8GHz 6 20 18 4 1V 16 2 0 0 14 2 4 6 V 8 12 0 12 20 40 60 80 100 mA 130 IC Power Gain |S21|2= f(f) Power Gain Gma , Gms = f(f) V CE = Parameter VCE = Parameter 32 dB 32 IC=50mA dB 24 S21 24 G IC =50mA 20 20 16 16 12 12 8 8 10V 4 2V 1V 4 10V 0 2V 1V 0.7V 0.7V 0 0.0 0.5 1.0 1.5 2.0 2.5 GHz -4 0.0 3.5 f 0.5 1.0 1.5 2.0 2.5 GHz 3.5 f 7 Jun-22-2001