BFR360F NPN Silicon RF Transistor Preliminary data Low voltage/ low current operation 2 3 For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm 1 Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR360F Marking FBs Pin Configuration 1=B 2=E 3=C Package TSFP-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 6 Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 2 Collector current IC 35 Base current IB 4 Total power dissipation1) Ptot 210 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 V mA TS 98°C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS 250 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Jun-16-2003 BFR360F Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)CEO 6 9 - V ICES - - 10 µA ICBO - - 100 nA IEBO - - 1 µA hFE 60 130 200 Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain- - IC = 15 mA, VCE = 3 V 2 Jun-16-2003 BFR360F Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 11 14 - Ccb - 0.32 0.5 Cce - 0.2 - Ceb - 0.4 - Fmin - 1 - - 15.5 - - 11 - AC Characteristics (verified by random sampling) Transition frequency fT GHz IC = 15 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance pF VCB = 5 V, f = 1 MHz, emitter grounded Collector emitter capacitance VCE = 5 V, f = 1 MHz, base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, collector grounded Noise figure dB IC = 3 mA, VCE = 3 V, ZS = ZSopt, f = 1.8 GHz Power gain, maximum available1) Gma IC = 15 mA, VCE = 3 V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz IC = 15 mA, VCE = 3 V, ZS = ZSopt , ZL = ZLopt , f = 3 GHz |S21e|2 Transducer gain dB IC = 15 mA, VCE = 3 V, ZS = ZL = 50 , f = 1.8 GHz - 13 - IC = 15 mA, VCE = 3 V, ZS = ZL = 50 , f = 3 GHz - 9 - IP3 - 24 - P-1dB - 9 - Third order intercept point at output 2) dBm VCE = 3 V, IC = 15 mA, f = 1.8 GHz, ZS = ZL = 50 1dB Compression point at output IC = 15 mA, VCE = 3 V, ZS = ZL = 50 , f = 1.8 GHz 1G 1/2 ma = |S21e / S12e | (k-(k²-1) ) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 3 Jun-16-2003 BFR360F SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = AF = 0.0689 20 2.4 60 1.4 7.31 400 9.219 1.336 0.864 1.92 0 0 fA V BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = KF = V - fF ps mA V ns - 1 147 77.28 6 0.3 0.1 78.2 1.3 0.115 0 0.486 0 0.5 0.954 1E-14 mA A m V deg fF K NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = NK = 1 150 1 20 75 0.35 0.5 0.198 473 0.129 0.75 1.11 0.5 fA fA µA L1 = L2 = L3 = C1 = C2 = C3 = C4 = C5 = C6 = 0.556 0.657 0.381 43 123 66 10 36 47 nH nH nH fF fF fF fF fF fF V fF V eV K - All parameters are ready to use, no scalling is necessary. Package Equivalent Circuit: C4 C1 L2 B Transistor Chip B’ C’ L3 C E’ C6 C2 L1 C5 C3 E Valid up to 6GHz EHA07524 For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes 4 Jun-16-2003 BFR360F Total power dissipation Ptot = (TS ) Permissible Pulse Load RthJS = (tp ) 10 3 240 mW K/W RthJS P tot 180 150 10 2 120 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 90 60 30 0 0 15 30 45 60 75 90 105 120 °C 10 1 -7 10 150 10 -6 10 -5 10 -4 10 -3 10 -2 TS s 10 0 tp Permissible Pulse Load Collector-base capacitance Ccb = (VCB ) Ptotmax/PtotDC = (tp) f = 1MHz 10 1 0.8 Ptotmax/PtotDC pF D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Ccb 0.6 0.5 0.4 0.3 0.2 0.1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 0 0 tp 2 4 6 8 10 12 V 16 VCB 5 Jun-16-2003 BFR360F Third order Intercept Point IP3=(IC) Transition frequency fT = (IC) (Output, ZS=ZL=50) f = 1GHz VCE = parameter, f = 1.8GHz VCE = parameter 30 17 GHz dBm 14 5V 20 12 fT IP 3 3V 15 10 2V 8 10 6V 4V 3V 2V 1V 5 1V 6 4 0 -5 0 0.7V 2 5 10 15 20 25 30 mA 0 0 40 5 10 15 20 25 30 IC mA 40 IC Power gain Gma, Gms = (IC ) Power gain Gma, Gms = (IC) f = 0.9GHz f = 1.8GHz VCE = parameter VCE = parameter 18 24 dB 5V dB 22 5V 3V 21 2V 3V G G 20 19 14 2V 18 1V 17 12 1V 16 15 0.7V 10 14 0.7V 13 12 0 5 10 15 20 25 30 mA 8 0 40 IC 5 10 15 20 25 30 mA 40 IC 6 Jun-16-2003 BFR360F Power Gain Gma , Gms = (f) Insertion Power Gain |S21|² = (f) VCE = parameter VCE = parameter 49 36 dB dB Ic = 15mA Ic = 15mA 34 24 5V 2V 1V 0.7V G 28 G 39 29 20 24 16 19 12 9 5V 2V 1V 0.7V 4 0 0.5 14 8 4 1 1.5 2 2.5 3.5 GHz 3 0 0 4.5 0.5 1 1.5 2 2.5 3 f Power gain Gma, Gms = (IC ) | S21|² = (VCE): - - - - VCE = 3V f = parameter f = parameter 24 22 dB Ic = 15mA 0.9GHz 0.9GHz 19 0.9GHz 20 18 17 18 1.8GHz G G 4.5 f Power Gain Gma , Gms = (VCE ): dB 3.5 GHz 16 15 16 1.8GHz 14 1.8GHz 14 13 2.4GHz 12 11 12 3GHz 10 9 10 4GHz 8 8 0 1 2 3 4 5 V 7 0 7 VCE 5 10 15 20 25 30 35 mA 45 IC 7 Jun-16-2003 BFR360F Noise figure NF = (IC ) VCE = 3V, f = 1,8 GHz Source impedance for min. noise figure vs. frequency VCE = 3 V dB 3 +j50 F50 +j25 +j100 2.4 2.2 +j10 NFmin F 2 1.8 2.4GHz 1.8GHz 3GHz 1.6 0 10 1.4 25 50 0.9GHz 100 4GHz 1.2 1 3mA 15mA -j10 0.8 0.6 -j25 0.4 -j50 0.2 0 0 -j100 5 10 15 20 25 30 35 mA 45 IC 8 Jun-16-2003