CMLT2207 DUAL COMPLEMENTARY TRANSISTORS SOT-563 CASE (TA=25°C) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current IC Power Dissipation PD Operating and Storage Junction Temperature TJ,Tstg Thermal Resistance ΘJA Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT2207 type is a dual complementary silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching applications. Marking Code is L70. Complementary Devices include: 1 x 2N2222A NPN Transistor 1 x 2N2907A PNP Transistor MAXIMUM RATINGS: NPN (Q1) 75 40 6.0 PNP (Q2) 60 60 5.0 600 350 UNITS V V V mA mW -65 to +150 357 °C °C/W ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL ICBO ICBO ICBO ICBO IEBO ICEV ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE hFE TEST CONDITIONS VCB=60V VCB=50V VCB=60V, TA=125°C VCB=50V, TA=125°C VEB=3.0V VCE=60V, VEB(OFF)=3.0V VCE=30V, VEB(OFF)=500mV IC=10µA IC=10mA IE=10µA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=1.0V, IC=150mA VCE=10V, IC=500mA NPN (Q1) MIN MAX 10 10 10 10 75 40 6.0 0.3 1.0 0.6 1.2 2.0 35 50 75 100 300 50 40 - PNP (Q2) MIN MAX 10 10 50 60 60 5.0 0.4 1.6 1.3 2.6 75 100 100 100 300 50 - UNITS nA nA nA nA nA nA nA V V V V V V V R0 (21-February 2002) Central CMLT2207 DUAL COMPLEMENTARY TRANSISTORS TM Semiconductor Corp. SYMBOL fT fT Cob Cib Cib hie hie hre hre hfe hfe hoe hoe rb'Cc NF ton td tr toff ts ts tf tf NPN (Q1) MIN MAX 300 8.0 25 2.0 8.0 0.25 1.25 8.0 4.0 50 300 75 375 5.0 35 25 200 150 4.0 10 25 225 60 - TEST CONDITIONS VCE=20V, IC=20mA, f=100MHz VCE=20V, IC=50mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz VEB=2.0V, IC=0, f=1.0MHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz VCB=10V, IE=20mA, f=31.8MHz VCE=10V, IC=100µA, RS=1.0kΩ, f=1.0kHz VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=30V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=30V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA PNP (Q2) MIN MAX 200 8.0 30 45 10 40 100 80 30 UNITS MHz MHz pF pF pF kΩ kΩ x10-4 x10-4 µmhos µmhos ps dB ns ns ns ns ns ns ns ns SOT-563 CASE - MECHANICAL OUTLINE D E A 6 E 5 4 B G 1 C F 3 2 H R0 LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Collector Q2 4) Emitter Q2 5) Base Q2 6) Collector Q1 R0 (21-February 2002)