ETC CMLT2207

CMLT2207
DUAL
COMPLEMENTARY
TRANSISTORS
SOT-563 CASE
(TA=25°C)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
IC
Power Dissipation
PD
Operating and Storage
Junction Temperature
TJ,Tstg
Thermal Resistance
ΘJA
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT2207
type is a dual complementary silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for small signal general purpose and
switching applications. Marking Code is L70.
Complementary Devices include:
1 x 2N2222A NPN Transistor
1 x 2N2907A PNP Transistor
MAXIMUM RATINGS:
NPN (Q1)
75
40
6.0
PNP (Q2)
60
60
5.0
600
350
UNITS
V
V
V
mA
mW
-65 to +150
357
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
ICBO
ICBO
ICBO
ICBO
IEBO
ICEV
ICEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
hFE
TEST CONDITIONS
VCB=60V
VCB=50V
VCB=60V, TA=125°C
VCB=50V, TA=125°C
VEB=3.0V
VCE=60V, VEB(OFF)=3.0V
VCE=30V, VEB(OFF)=500mV
IC=10µA
IC=10mA
IE=10µA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=0.1mA
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=1.0V, IC=150mA
VCE=10V, IC=500mA
NPN (Q1)
MIN MAX
10
10
10
10
75
40
6.0
0.3
1.0
0.6
1.2
2.0
35
50
75
100 300
50
40
-
PNP (Q2)
MIN MAX
10
10
50
60
60
5.0
0.4
1.6
1.3
2.6
75
100
100
100 300
50
-
UNITS
nA
nA
nA
nA
nA
nA
nA
V
V
V
V
V
V
V
R0 (21-February 2002)
Central
CMLT2207
DUAL
COMPLEMENTARY TRANSISTORS
TM
Semiconductor Corp.
SYMBOL
fT
fT
Cob
Cib
Cib
hie
hie
hre
hre
hfe
hfe
hoe
hoe
rb'Cc
NF
ton
td
tr
toff
ts
ts
tf
tf
NPN (Q1)
MIN MAX
300
8.0
25
2.0
8.0
0.25
1.25
8.0
4.0
50
300
75
375
5.0
35
25
200
150
4.0
10
25
225
60
-
TEST CONDITIONS
VCE=20V, IC=20mA, f=100MHz
VCE=20V, IC=50mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
VEB=0.5V, IC=0, f=1.0MHz
VEB=2.0V, IC=0, f=1.0MHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=10V, IC=10mA, f=1.0kHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=10V, IC=10mA, f=1.0kHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=10V, IC=10mA, f=1.0kHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=10V, IC=10mA, f=1.0kHz
VCB=10V, IE=20mA, f=31.8MHz
VCE=10V, IC=100µA, RS=1.0kΩ, f=1.0kHz
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
VCC=6.0V, IC=150mA, IB1=IB2=15mA
VCC=30V, IC=150mA, IB1=IB2=15mA
VCC=6.0V, IC=150mA, IB1=IB2=15mA
VCC=30V, IC=150mA, IB1=IB2=15mA
VCC=6.0V, IC=150mA, IB1=IB2=15mA
PNP (Q2)
MIN MAX
200
8.0
30
45
10
40
100
80
30
UNITS
MHz
MHz
pF
pF
pF
kΩ
kΩ
x10-4
x10-4
µmhos
µmhos
ps
dB
ns
ns
ns
ns
ns
ns
ns
ns
SOT-563 CASE - MECHANICAL OUTLINE
D
E
A
6
E
5
4
B
G
1
C
F
3
2
H
R0
LEAD CODE:
1) Emitter Q1
2) Base Q1
3) Collector Q2
4) Emitter Q2
5) Base Q2
6) Collector Q1
R0 (21-February 2002)