MA111 GaAs Hall Elements OH10023 (OH023) GaAs hall element Unit : mm +0.2 Magnetic sensor 2.8 –0.3 +0.2 1.5 –0.3 0.65±0.15 ■ Features 0.65±0.15 Output resistance : typ. 7kΩ(max. 10kΩ) ● Sealed in the Mini type (4-pin) package. Automatic insertion through 3 2 +0.1 ● 0.8 1.1 –0.1 +0.2 +0.1 0.16 –0.06 taping and magazine. ■ Applications 0 to 0.1 0.4±0.2 ● Various hall motor (Applicable to CD, VD, VCR, FDD, and other portable equipment) ● 0.4 –0.05 Input resistance : typ. 2kΩ(min. 1.5kΩ) 0.95 ● 1 0.95 Hall voltage : typ. 90mV(VC= 3V, B= 0.1T) 2.9±0.2 ● 1.9±0.2 0.5R 4 1 : VH Output – side – side 2 : VC Input 3 : VH Output + side + side 4 : VC Input Mini Type Package (4-pin) Applicable to wide-varying field (OA equipment, etc.) Marking Symbol : OT ■ Absolute Maximum Ratings (Ta= 25˚C) Symbol Rating Control voltage Parameter VC 6 Power dissipation PD 150 Operating ambient temperature Topr –10 to +125 ˚C Storage temperature Tstg – 55 to +125 ˚C Unit V mW ■ Electrical Characteristics (Ta= 25˚C) Parameter Symbol *1 Condition min typ 70 90 max Unit Hall voltage VH Unbalance voltage VHO VC= 3V, B= 0T Input Resistance RIN IC= 0.1mA, B= 0T 1.5 Output resistance ROUT IC= 0.1mA, B= 0T 5 Temperature coefficient of hall voltage β IC=1.5mA, B= 0.1T – 0.06 %/˚C Temperature coefficient of input resistance α IC= 0.1mA, B= 0T 0.3 %/˚C Linearity of hall voltage *1 VH = VH + + VH γ ∗2 VC= 3V, B= 0.1T IC=1mA, B= 0.05T/0.1T 110 mV ±9.5 mV 2 3 kΩ 7 10 kΩ 2 % – 2 *2 The linearity γ of VH is a percentage of the cumulative sensitivity of KH0.05 and KH0.1 measured at B= 0.05T and 0.1T for the average value. KH0.1 – KH0.05 VH γ= ( Percentage of the cumulative sensitivity KH = ) 1/2 (KH0.05 + KH0.1) IC · B Note)The part number in the parenthesis shows conventional part number. OH10023 (OH023) GaAs Hall Element PD – Ta VH – Ta RIN – Ta 240 200 4000 180 (mV) 160 VH (mW) PD 100 Hall voltage Power dissipation 120 Input resistance RIN (Ω) 200 160 140 B=0 IC=0.1mA B=0.1T IC=1.5mA 80 60 40 120 80 3000 2000 1000 40 20 0 0 0 20 40 60 0 80 100 120 140 160 Ambient temperature Ta – 40 (˚C) 0 Ambient temperature VH – B 80 120 –40 (˚C) Ta 0 200 160 120 0.08 0.12 0.16 0.20 40 0 1 2 3 4 ■ Typical Drive Circuit +5V +5V 4 – 1 + 2 –5V –5V 120 40 Control current IC (mA) 3 160 80 0 Magnetic flux density B (T) 200 80 0 0.04 B=0.1T Ta=25˚C 240 Hall voltage VH (mV) Hall voltage VH (mV) 50 120 280 240 100 80 320 B=0.1T Ta=25˚C 280 150 40 VH – VC 320 VC=3V Ta=25˚C 0 0 Ambient temperature Ta (˚C) VH – IC 200 Hall voltage VH (mV) 40 –V +V 0 1 2 3 4 5 6 Control voltage VC (V) 7 8 Caution for Safety Gallium arsenide material (GaAs) is used in this product. DANGER Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products. Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. 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