NTE NTE2954

NTE2954
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Applications:
D Motor Control
D Lamp Control
D Solenoid Control
D DC–DC Converter
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Drain–Source Voltage (VGS = 0V), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Gate–Source Voltage (VDS = 0V), VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Drain Current, ID
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280A
Avalanche Drain Current (Pulsed, L = 100µH), IDA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A
Source Current, IS
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280A
Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35W
Channel Temperature Range, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Channel–to–Case, Rth(ch–c) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.57°C/W
Isolation Voltage (AC for 1 minute, Terminal–to–Case), VISO . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V
Electrical Characteristics: (Tch = +25°C unless otherwise specified)
Parameter
Drain–Source Breakdown Voltage
Symbol
Test Conditions
V(BR)DSS VDS = 0V, ID = 1mA
Min
Typ
Max
Unit
100
–
–
V
Gate–Source Leakage
IGSS
VGS = ±20V, VDS = 0V
–
–
±0.1
µA
Zero Gate Voltage Drain Current
IDSS
VDS = 100V, VGS = 0
–
–
0.1
mA
Gate Threshold Voltage
VGS(th)
VDS = 10V, ID = 1mA
1.0
1.5
2.0
V
Static Drain–Source ON Resistance
RDS(on)
VGS = 10V, ID = 35A
–
13
17
mΩ
VGS = 4V, ID = 35A
–
14
18
mΩ
VDS(on)
VGS = 10V, ID = 35A
–
0.46
0.60
V
|yfs|
VGS = 10V, ID = 35A
–
68
–
S
Drain–Source On–State Voltage
Forward Transfer Admittance
Electrical Characteristics (Cont’d): (Tch = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Typ
Max
Unit
–
8200
–
pF
Input Capacitance
Ciss
Output Capacitance
Coss
–
1150
–
pF
Reverse Transfer Capacitance
Crss
–
600
–
pF
Turn–On Delay Time
td(on)
–
54
–
ns
–
140
–
ns
td(off)
–
830
–
ns
tf
–
350
–
ns
IS = 35A, VGS = 0V
–
1.0
1.5
V
IS = 70A, dIF/dt = 100A/µs
–
115
–
ns
Rise Time
tr
Turn–Off Delay Time
Fall Time
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
VGS = 0V, VDS = 10V, f = 1MHz
Min
VDD = 50V, ID = 35A, VGS = 10V,
RGEN = RGS = 50Ω
Ω
.181 (4.6)
Max
.126 (3.2) Dia Max
.405 (10.3)
Max
.114 (2.9)
Isol
.252
(6.4)
.622
(15.0)
Max
G
D
S
.118
(3.0)
Max
.531
(13.5)
Min
.098 (2.5)
.100 (2.54)