ETC GS-NT1P/DF3

GS-NT1+/DF3
POWER MANAGEMENT MODULE FOR ISDN NT1+
REV. 01
Type
NT1+/DF3
Vi
180<Vi1<264
V
40<Vi2<120
Vdc
Vo
Io
± 40V
4.5W
± 5V
720mW
- 21V
900mW
- 50V
100mW
- 135V
700mW
FEATURE
■ COMBINED AC+DC CONVERTER FOR ISDN
NT1+ APPLICATION
■ Uo INTERFACE (DC) AND MAIN (AC) INPUTS
TO ENABLE NPM (Normal Power Mode) AND
RPM (Restricted Power Mode) CONDITIONS
■ INPUT FILTER TO MEET EMC
REQUIREMENTS
■ 5 INSULATED MAIN OUTPUTS
■ PEAK INPUT OVERVOLTAGE
WITHSTANDING
■ INPUT FUSE ON AC MAIN INPUT
■ INPUTS TO OUTPUTS INSULATION
■ AUXILIARY LOGIC OUTPUT TTLCOMPATIBLE FOR NPM/RPM MODE
INDICATION (EM SIGNAL & GREEN LED).
3mA OUTPUT SOURCE CURRENT
■ AUXILIARY LOGIC OUTPUT TTLCOMPATIBLE FOR U-INTERFACE
DETECTION (RED LED. 3mA OUTPUT
SOURCE CURRENT
■ INTERNAL RELAY FUNCTION FOR Vo1
POLARITY REVERSE
■ ANALOG OUTPUTS EMERGENCY
CONDITION PROGRAMMABLE VIA
EXTERNAL COMMAND, TTL-COMPATIBLE,
1mA SINK CURRENT
■ U-INTERFACE ACCORDING TO ETR 080
WITH EXTERNAL CAPACITOR </= 2.2 uF
■ S-INTERFACE ACCORDING TO ETS 300 012
■ SAFETY COMPLIANCE ACCORDING TO
EN60950
ORDERING NUMBER: GS-NT1+/DF3
■
MECHANICAL DIMENSIONS
(LxWxH):96x58x26.6
DESCRIPTION
The NT1+/DF3 Power Management Module is a
comprehensive solution for ISDN-NT1 “Plus” (Network Termination Basic Access type Plus) equipment, combining both AC-DC and DC-DC functions.
The NT1+/DF3 Power Management Module (NT1+
PMM) provide the NT1+ equipment with all necessary supply voltages as well as control signals to operate in the different operating modes, typically the
Normal Power Mode (NPM) and Restricted Power
Mode (RPM).
Connected to the main, Input 1 is the AC input power
to the NT1+ PMM, source of the whole necessary
power in normal operating mode, namely in NPM. Input 2 is the DC power source when in RPM, therefore
to connect to the U-INTERFACE.
When the main is available (230 Vac in this version)
NT1+ PMM operate in Normal Power Mode, therefore it supply +40V (output 1) to the S-interface being
the output power 4.5 W. Output 2 delivers 5V (up to
720 mW) for the logics and output 3 delivers -21V (up
to 900 mW). Out voltage 4 is -50V with 100 mW output power. Last, output 5 delivers -135V and the output power can reach peaks of 700 mW.
February 2003
This is preliminary information on a new product now in development. Details are subject to change without notice.
1/10
GS-NT1+/DF3
When the main is missing, the module remains active but only in Restricted Power Mode (RPM). The only power
source in RPM is the Input 2, the U-Interface (Vi2). Therefore in RPM the following condition apply to outputs 1
and 2: output 1 reverses the voltage (it becomes -40V) and the maximum power Pout is reduced to 420 mW.
P2max is reduced to 450 mW typically, however the output power available at outputs 2, 3, 4, 5 mainly depend
on input power available from the”U-Interface” Vi2, therefore subject of variation as per local application and regulation. In RPM it is also possible to set a different “emergency condition” setting HIGH the auxiliary input 3 (analog emergency input, Vin3). In this case Pout1 is reduced to 25 mW, voltage level being -40V.
The following tables give you details of the various parameters in the 3 different operating modes, namely NPM
with Vi3 LOW, RPM with Vi3 HIGH.
Availability of the input AC main is also acknowledged by specific auxiliary output (out 6, “EM signal”), a TTLcompatible signal set HIGH (to logic level “1”) when the main is available and LOW when th AC main is missing.
The presence of the “U” is detected by an other auxiliary output (out 7) that is HIGH only when Vin2>34 Vdc.
The NT1+ PMM provides double insulation (3000 Vrms) between the inputs (1 and 2), and among the input 1
and all the outputs. Basic insulation 2000 Vdc exist among Out 1 and all the other outputs. The other outputs
(including the 2 auxiliary outputs) and the input 3, share the same common ground.
Double insulation (2000 Vrms) is provided among Input 2 (DC “U”) and all outputs.
The NT1+ Power Management Module operate in the range -10 to +70ºC, storage temperatures in the range
-40 to +85ºC are allowed.
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GS-NT1+/DF3
ELECTRICAL CHARACTERISTICS when in NPM (Tamb=25)C, unless otherwise specified.)
NPM Standard Condotion: Vin1=180 to 264 Vrms -------------Vin2=40 to 120 Vdc
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
180
264
VRMS
Vi1
AC Input Voltage 1
Vi2
DC Input Voltage 2
any polarity
40
120
Vdc
fi
Vi1 Input Frequency
Vi1 = 230 VRMS
43
56
Hz
Vi1st
Start up Input 1 voltage
Output parameters as per NPM
Standard Condition
175
VRMS
Pi1
Input 1 Apparent Power
NPM Standard Condition
15
VA
Vi2nd
Start up Input 2 voltage
Output parameters as per Standard
Condition
40
Vdc
Vo1
Output Voltage 1
Standard condition
34
40
42
V
Vo2
Output Voltage 2
Standard condition
4.75
5
5.25
V
Vo3
Output Voltage 3
Standard condition
-20
-21
-24
V
Vo4
Output Voltage 4
Standard condition
-48
-50
-65
V
Vo5
Output Voltage 5
Standard condition
-130
-135
-170
V
Vo6
Auxiliary Output 6(EM)
Standard condition
3.75
5
5.25
V
Vo7
Auxiliary Output 7(red LED)
Standard condition
3.75
5
5.25
V
Output Ripple voltage 1,3,4,5
Standard condition BW: 0-20 MHz
100
mVrms
Vor2
Output Ripple voltage 2
Standard condition BW: 0-20 MHz
30
mVrms
Po1
Output Power 1
Std. condition according to ETS300
012, E5.1.5, E5.1.6, E5.1.7 (n=4)
4.5
W
Po2
Output Power 2
Standard condition
720
mW
Po3
Output Power 3
Standard condition
900
mW
Po4
Output Power 4
Standard condition
100
mW
Po5
Output Power 5
During 1 s, 40% of the time during the
ring period at the analog interface.
The output is current limited at 2.5 mA
± 0.2 mA, with 100 uF capacitor
700
mW
Vi1th
NPM => RPM mode Vi1
threshold
Output parameters as per Standard
Condition
Transition time
transition NPM => RPM and vice
versa according to ETS300 012,
E5.1.3 (n=4)
Vi1pk
Input 1 Transient overvoltage
t = 10/700 us as per 1TR9 Dec. 96
2000
V
Vi1pk
Input 1 Transient overvoltage
common mode test according to
ETS300 047-5p5.6
2500
V
Vor1,3,4,5
Ttr
160
Vrms
5
ms
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GS-NT1+/DF3
Symbol
Parameter
Vi1pk
Input 1 Transient overvoltage
impuls transfer from main according
to ETS300 047-5p5.7.1
2500
V
Vo1pk
Output 1 Transient
overvoltage
t=1.2/50 us
500
V
Vis
Insulation Voltage
Input 1 to outputs and input 1 to input
2, t=60s reinforced insulation as per
EN60950
3000
V
Vist
Insulation Voltage
Input 1 to outputs t=10/700 us (pulse)
4000
V
Hold-up time
Vin = 180 VRMS Standard Condition
20
ms
Mean Time Before Failure
Ground Fixed, MIL-HDBK-217E
1
Mh
th
MTBF
Top
4/10
Oper. Ambient Temperature
Test Condition
Min.
-10
Typ.
Max.
+70
Unit
ºC
GS-NT1+/DF3
ELECTRICAL CHARACTERISTICS when in RPM (Tamb=25)C, unless otherwise specified.)
RPM Standard Condition: Vin1 < 100 Vrms -------------Vin2 = 28 to 115 Vdc ------------------Vin3 = LOW
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
100
Vrms
120
Vdc
48
Vdc
Vi1
AC Input Voltage 1
Vi2
DC Input Voltage 2
any polarity
Start up Input 2 voltage
Output parameters as per Std. Condition
Vo1
Output Voltage 1
Standard Condition
-34
-40
-42
V
Vo2
Output Voltage 2
Standard Condition
4.75
5
5.25
V
Vo3
Output Voltage 3
Standard condition
-20
-21
-24
V
Vo4
Output Voltage 4
Standard condition
-48
-50
-65
V
Vo5
Output Voltage 5
Standard condition
-130
-135
-170
V
Vo6
Auxiliary Output 6 (EM)
Standard condition
3.75
5
5.25
V
Vo7
Auxiliary Output 7 (red LED)
Standard condition
3.75
5
5.25
V
Vor1,3,4,
Output Ripple Voltage 1,3,4,5
Standard condition BW :0-20 MHz
100
mVrms
Vor2
Output Ripple Voltage 2
Standard condition BW:0-20 Mhz
30
mVrms
Po1
Output Power 1
Std. condition according to ETS300 012,
E5.1.1, E5.1.4.1, E5.1.4.2, E5.1.5.3 (n=4)
420
mW
Po2
Output Power 2
Standard Condition
450
mW
Po3
Output Power 3
Standard Condition
tbd
mW
Po4
Output Power 4
Standard Condition
tbd
mW
Po5
Output Power 5
Standard Condition
tbd
mW
Vi1st
RPM => NPM mode Vi1
threshold
Output parameters as per Standard
Condition
Transition TIme
transition NPM => RPM and vice versa
according to ETS300 012, E5.1.3 (n=4)
Vi1pk
Input 1 Transient overvoltage
t = 10/700 us as per 1TR9 Dec. 96
2000
V
Vi1pk
Input 1 Transient overvoltage
common mode test according to ETS300
047-5p5.6
2500
V
Vi1pk
Input 1 Transient overvoltage
impuls transfer from main according to
ETS300 047-5p5.7.1
2500
V
Vo1pk
Output 1 Transient overvoltage t=1.2/50 us
500
V
Vis
Insulation Voltage
Input 1 to outputs and input 1 to input 2,
t=60s reinforced insulation as per
EN60950
3000
V
Vist
Insulation Voltage
Input 1 to outputs t=10/700 us (pulse)
4000
V
Hold-up time
Vin = 180 Vrms Standard Condition
20
ms
Vi2nd
40
5
Ttr
th
175
Vrms
5
ms
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GS-NT1+/DF3
Symbol
MTBF
Parameter
Mean Time Before Failure
Test Condition
Ground Fixed, MIL-HDBK-217E
Min.
Typ.
Max.
1
Unit
Mhours
Top
Oper. Ambient Temperature
-10
+70
º
Tstg
Storage Temperature Range
-40
+85
º
ELECTRICAL CHARACTERISTICS when in RPM (Tamb=25)C, unless otherwise specified.)
6/10
C
C
GS-NT1+/DF3
RPM Standard Condition: Vin1 < 100 Vrms-----------Vin2 = 40 to 120 Vdc------------Vin3 = HIGH
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
100
Vrms
120
Vdc
40
Vdc
Vi1
AC Input Voltage 1
Vi2
DC Input Voltage 2
any polarity
Start up Input 2 voltage
Output parameters as per Std.
Condition
Vo1
Output Voltage 1
Standard Condition
-34
-40
-42
V
Vo2
Output Voltage 2
Standard Condition
4.75
5
5.25
V
Vo3
Output Voltage 3
Standard condition
-20
-21
-24
V
Vo4
Output Voltage 4
Standard condition
-48
-50
-65
V
Vo5
Output Voltage 5
Standard condition
-130
-135
-170
V
Vo6
Auxiliary Output 6 (EM)
Standard condition
1.25
V
Vo7
Auxiliary Output 7 (red LED)
Standard condition
5.25
V
Standard condition BW :0-20
MHz
100
mVrms
30
mVrms
Vi2nd
Vor1,3,4,5 Output Ripple Voltage 1,3,4,5
40
3.75
5
Vor2
Output Ripple Voltage 2
Standard condition BW:0-20
Mhz
Po1
Output Power 1
Std. condition
Po2
Output Power 2
Standard Condition
450
mW
Po3
Output Power 3
Standard Condition
tbd
mW
Po4
Output Power 4
Standard Condition
tbd
mW
Po5
Output Power 5
Standard Condition
tbd
mW
Vi1st
RPM => NPM mode Vi1 threshold Output parameters as per
Standard Condition
Ttr
25
mW
175
Vrms
5
ms
Transition time
transition NPM => RPM and vice
versa according to ETS300 012,
E5.1.3 (n=4)
Vi1pk
Input 1 Transient overvoltage
t = 10/700 us as per 1TR9 Dec.
96
2000
V
Vi1pk
Input 1 Transient overvoltage
common mode test according to
ETS300 047-5p5.6
2500
V
Vi1pk
Input 1 Transient overvoltage
impuls transfer from main
according to ETS300 0475p5.7.1
2500
V
Vo1pk
Output 1 Transient overvoltage
t=1.2/50 us
500
V
Insulation Voltage
Input 1 to outputs and input 1 to
input 2, t=60s reinforced
insulation as per EN60950
3000
V
Vis
7/10
GS-NT1+/DF3
Symbol
Vist
th
MTBF
Parameter
Test Condition
Insulation Voltage
Input 1 to outputs t=10/700 us
(pulse)
Hold-up time
Mean Time Before Failure
Min.
Typ.
Max.
Unit
4000
V
Vin = 180 Vrms Standard
Condition
20
ms
Ground Fixed, MIL-HDBK-217E
1
Mhours
Top
Oper. Ambient Temperature
-10
+70
ºC
Tstg
Storage Temperature Range
-40
+85
ºC
Figure 1. NT1 Plus Power Management Module TOP VIEW (dimensions in mm)
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GS-NT1+/DF3
Figure 2. NT1 Plus Power Management Module SIDE VIEW (dimensions in mm)
PIN CONFIGURATION
Pin No
Signal
Pin No
Signal
1
Output 5 (-135 V)
12
N.C.
2
Output 6 (EM, Green LED)
13
N.C.
3
Vin3, Analog Emergency Input 3
14
Output 1 return (0 V) S-interface
4
Output 3 (-21 V)
15
N.C.
5
Output 4 (-50 V)
16
N.C.
GND, Common return for pins 1, 2, 3, 4, 5, 7,
8, 10, 21
17
Vi2 Input Voltage 2, Vdc (any polarity)
7
Output 2 (+5 V)
18
Vi2 Input Voltage 2, Vdc (any polarity)
8
Rele‘
19
Vi1 Input Voltage 1, VAC
10
Output 7 (RED LED)
20
Vi1 Input Voltage 1, VAC
11
Output 1 (± 40 V) S-interface
21
Vring ON/OFF
6, 9
9/10
GS-NT1+/DF3
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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