Agilent HMMC-5220 DC–15 GHz HBT Series–Shunt Amplifier Data Sheet Features •High Bandwidth, F−1dB: 16 GHz Typical •Moderate Gain: 10 dB ± 1 dB @ 1.5 GHz •P−1dB @ 1.5 GHz: 12.5 dBm Typical •Low l/f Noise Corner: <20 kHz Typical •Single Supply Operation: >4.75 volts @ 44 mA Typ. •Low Power Dissipation: 190 mW Typ. for chip Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: 410 × 460 µm (16.1 × 18.1 mils) ± 10 µm (± 0.4 mils) 127 ± 15 µm (5.0 ± 0.6 mils) 70 × 70 µm (2.8 × 2.8 mils), or larger Description The HMMC-5220 is a DC to 15 GHz, 10 dB gain, feedback amplifier designed to be used as a cascadable gain block for a variety of applications. The device consists of a modified Darlington feedback pair which reduces the sensitivity to process variations and provides 50 ohm input/output port matches. Furthermore, this amplifier is fabricated using MWTC's Heterojunction Bipolar Transistor (HBT) process which provides excellent process uniformity, reliability and 1/f noise performance. The device requires a single positive supply voltage and generally operates Class–A for good distortion performance. Absolute Maximum Ratings[1] Symbol Parameters/Conditions VCC Min. Max. Units VCC Pad Voltage 8.0 Volts VPAD Output Pad Voltage 3.5 Volts Pin RF Input Power 13 dBm TJ Junction Temperature +150 °C Top Operating Temperature −55 +85 °C Tst Storage Temperature −65 +165 °C Tmax Max. Assembly Temperature +300 °C Notes: 1. Operation in excess of any one of these ratings may result in permanent damage to this device. For normal operation, all combined bias and thermal conditions should be chosen such that the maximum Junction Temperature (TJ) is not exceeded. TA=25°C except for T op, Tst, and Tmax. 1 DC Specifications/Physical Properties[1] (Typicals are for VCC = + 5V, R out = 64Ω) Symbol Parameters/Conditions Min. Typ. Max. Units VCC Supply Voltage 4.75 6.0 IC1 Stage-One Supply Current 14.5 17 20 mA IC2 Stage-Two Supply Current 26 29 32 mA IC1+IC2 Total Supply Current 46 mA θJ-bs Thermal Resistance[1] (Junction-to-Backside at T J = 150°C)[2] 210 °C/Watt Volts Notes: 1. Backside ambient operating temperature T A = Top = 25°C unless otherwise noted. 2. Thermal resistance (in °C/Watt) at a junction temperature T(°C) can be estimated using the equation: θ(T) ≅ θ(TJ) [T(°C)+273] / [TJ(°C)+273] where θ(TJ=150°C) = θJ-bs. RF Specifications (TA = 25°C, VCC = + 5V, R out = 64Ω, 50Ω system) Symbol Parameters/Conditions BW Operating Bandwidth (f−3db) BW Operating Bandwidth (f−1db) S21 Small Signal Gain (@1.5 GHz) Min. Typ. Max. 15 GHz 16 9 Units 10 GHz 11 dB Small Signal Gain Flatness (DC−4 GHz) ±0.2 dB Small Signal Gain Flatness (DC−15 GHz) ±1 dB Temperature Coefficient of Gain (DC−10 GHz) 0.004 dB/°C Temperature Coefficient of Gain (10−15 GHz) 0.02 dB/°C Minimum Input Return Loss (DC−10 GHz) −15 dB Minimum Input Return Loss (10−15 GHz) −12 dB (RLout)MIN Minimum Output Return Loss −15 dB Isolation Reverse Isolation −15 dB ∆ Gain TC (RLin)MIN Output Power at 1dB Gain Compression: (@ 1.5 GHz) 12.5 (@ 5 GHz) 12.1 (@ 10 GHz) 10.7 (@ 15 GHz) 7.7 PSAT Saturated Output Power (@ 1.5 GHz) 13 dBm NF Noise Figure (1 GHz) 6.0 dB Pf−1dB 2 dBm Applications sistor is given by the equation: The HMMC-5220 can be used for a variety of applications requiring moderate amounts of gain and low power dissipation in a 50 ohm system. Rout = 35.7Vsupply −114.3Ω, Biasing and Operation The HMMC-5220 can be operated from a single positive supply. This supply must be connected to two points on the chip, namely the Vcc pad and the output pad. The supply voltage may be directly connected to the VCC pad as long as the voltage is between +4.75 to +7 volts; however, if the supply is higher than +7 volts, a series resistor (R CC) should be used to reduce the voltage to the VCC pad. See the bonding diagram for the equation used to select R CC. In the case of the output pad, the supply voltage must be connected to the output transmission line through a resistor and an inductor. The required value of the re- where Vsupply is in volts. If Rout is greater than 300 ohms, the inductor may be omitted, however, the amplifier's gain may be reduced by ~0.5 dB. Figure 4 shows a recommended bonding strategy. The chip contains a backside via to provide a low inductance ground path; therefore, the ground pads on the IC should not be bonded. The voltage at the IN and OUT pads of the IC will be approximately 3.2 Volts; therefore, DC blocking caps should be used at these ports. Assembly Techniques It is recommended that the RF input and RF output connections be made using 0.7 mil diameter gold wire. The chip is designed to operate with 0.1-0.3 nH of inductance at the RF input and output. This can be accomplished by using 10 mil bond wire lengths on the RF input and output. The bias supply wire can be a 0.7 mil diameter gold wire attached to the VCC bonding pad. GaAs MMICs are ESD sensitive. ESD preventive measures must be employed in all aspects of storage, handling, and assembly. MMIC ESD precautions, handling considerations, die attach and bonding methods are critical factors in successful GaAs MMIC performance and reliability. Agilent application note #54, "GaAs MMIC ESD, Die Attach and Bonding Guidelines" provides basic information on these subjects. Vcc GND GND In Out GND GND Figure 1. Simplified Schematic Diagram 3 TA = 25°C, VCC = +6V, V supply = +6V, ROUT = 100Ω, Lin/out = 0.17nH[1] S21 -5 −10 −10 −20 S12, (dB) S21, (dB) 11 7 0 0 3 −15 S12 −1 −5 1.5 −20 −25 26.5 14 Frequency (GHz) S11, (dB) 15 ROUT = 100Ω, Lin/out = 0.17nH[1] 0 S11 −10 −20 S22 S22, (dB) TA = 25°C, VCC = +6V, Vsupply = +6V, −30 −30 −40 −40 −50 0.010 7.5 9 15 Frequency (GHz) Figure 2. Typical S 21 and S12 Response −50 Figure 3. Typical S11 and S22 Response S–Parameters[1] (TA = 25°C, VCC = + 6V, ROUT = 100Ω,Lin/out=0.17nH) Freq. (GHz) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 Notes: S11 S12 S21 S22 dB mag ang dB mag ang dB mag ang dB mag ang −36.815 −30.190 −26.991 −24.274 −22.219 −20.339 −18.556 −16.771 −15.138 −13.526 −11.968 −10.710 −9.561 −8.683 −7.974 −7.375 −6.925 −6.487 −6.186 −5.864 −5.596 −5.344 −5.101 −4.873 −4.641 −4.452 0.014 0.031 0.045 0.061 0.077 0.096 0.118 0.145 0.175 0.211 0.252 0.291 0.333 0.368 0.399 0.180 0.181 0.181 0.182 0.181 0.180 0.179 0.179 0.178 0.177 0.177 101.711 82.146 61.919 44.654 27.802 10.215 −7.488 −26.532 −45.766 −64.903 −84.115 −102.350 −119.990 −135.642 −149.914 −162.569 −173.902 176.146 167.583 159.638 152.696 146.514 140.907 135.780 131.066 126.675 −14.556 −14.582 −14.597 −14.618 −14.655 −14.682 −14.734 −14.774 −14.847 −14.868 −14.920 −14.971 −14.952 −14.945 −14.914 −14.909 −14.858 −14.860 −14.814 −14.867 −14.896 −14.935 −14.965 −15.003 −15.047 −15.027 0.187 0.187 0.186 0.186 0.185 0.184 0.183 0.183 0.181 0.181 0.179 0.178 0.179 0.179 0.180 0.180 0.181 0.181 0.182 0.181 0.180 0.179 0.179 0.178 0.177 0.177 −2.816 −5.700 −8.470 −11.254 −14.136 −16.941 −19.616 −22.309 −24.923 −27.421 −29.846 −32.213 −34.429 −36.859 −39.544 −42.062 −44.635 −47.629 −50.721 −53.627 −56.776 −59.179 −62.349 −64.663 −67.789 −70.387 10.176 10.239 10.389 10.591 10.834 11.111 11.398 11.661 11.851 11.934 11.847 11.548 11.094 10.444 9.671 8.804 7.905 6.979 6.072 5.168 4.299 3.476 2.671 1.883 1.157 0.439 3.227 3.251 3.307 3.385 3.481 3.594 3.714 3.828 3.914 3.951 3.912 3.779 3.587 3.328 3.045 2.756 2.484 2.233 2.012 1.813 1.640 1.492 1.360 1.242 1.142 1.052 170.043 160.475 150.592 140.439 129.786 118.664 106.865 94.261 80.955 66.934 52.329 37.679 23.434 9.757 −2.929 −14.573 −25.264 −35.066 −43.983 −52.137 −59.775 −66.862 −73.357 −79.769 −85.664 −91.318 −43.856 −39.221 −36.219 −33.911 −30.311 −27.968 −25.668 −23.403 −21.089 −19.412 −17.932 −16.642 −15.406 −14.556 −13.709 −13.120 −12.511 −12.065 −11.609 −11.189 −10.681 −10.236 −9.840 −9.355 −8.945 −8.647 0.006 0.011 0.015 0.020 0.031 0.040 0.052 0.068 0.088 0.107 0.127 0.147 0.170 0.187 0.206 0.221 0.237 0.249 0.263 0.276 0.292 0.308 0.322 0.341 0.357 0.370 93.948 −135.294 −130.656 −126.347 −133.404 −137.582 −144.575 −148.075 −154.839 −163.460 −171.353 −179.061 173.818 165.440 160.213 154.272 148.463 144.169 140.531 137.557 134.679 131.609 128.416 125.665 122.834 120.272 1. S–parameter data obtained from on wafer device measurement plus simulation of input and output wire bond inductance. 4 If 4.75V ≤ Vsupply ≤ 7V RCC = 0 If V supply > 7V RCC = [(Vsupply -6.5)*(1/0.01725)]Ω 5Vsupply Rcc Rout = [(Vsupply -3.2)*(1/0.028)]Ω Rout Lchoke[2] RF INPUT * * RF OUTPUT Cblock Cblock [1] Note: For optimum performance, the input and output bond wire inductances should each be 0.1–0.3 nH (bond wire has about 20 pH/mil of inductance). Figure 4. Assembly Diagram Note: Blocking Cap required on input and output. [2] Lchoke is optional if Rout is greater than 300Ω, however, gain will be reduced by about 0.5 dB. 460 390 Note: All dimensions in microns. 240 90 0 0 70 175 340 410 Figure 5. Bonding Pad Positions 5 This data sheet contains a variety of typical and guaranteed performance data. The information supplied should not be interpreted as a complete list of circuit specifications. In this data sheet the term typical refers to the 50th percentile performance. For additional information contact your local Agilent Technologies’ sales representative. www.agilent.com/semiconductors For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (408) 654-8675 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (+65) 6271 2451 India, Australia, New Zealand: (+65) 6271 2394 Japan: (+81 3) 3335-8152(Domestic/International), or 0120-61-1280(Domestic Only) Korea: (+65) 6271 2194 Malaysia, Singapore: (+65) 6271 2054 Taiwan: (+65) 6271 2654 Data subject to change. Copyright 2002 Agilent Technologies, Inc. August 30, 2002 5988-3201EN