Agilent HMMC-1015 DC–50 GHz Variable Attenuator Data Sheet Features • Specified Frequency Range: DC–26.5 GHz • Pin (-1dB): 27 dBm @ 500 MHz • Return Loss: 10 dB • Minimum Attenuation: 2.0 dB Chip Size: 1470 x 610 µm (57.9 x 24.0 mils) Chip Size Tolerance: ±10 µm (±0.4 mils) Chip Thickness: 127 ± 15 µm (5.0 ± 0.6 mils) Description The HMMC-1015 is a monolithic, voltage variable, GaAs IC attenuator that operates from DC to 50 GHz. The distributed topology of the HMMC-1015 minimizes the parasitic effects of its series and shunt FETs, allowing the HMMC-1015 to exhibit a wide dynamic range across its full bandwidth. An on-chip DC reference circuit may be used to maintain optimum VSWR for any attenuation setting or to improve the attenuation versus voltage linearity of the attenuator circuit. • Maximum Attenuation: 30.0 dB Absolute Maximum Ratings [1] Symbol Parameters/Conditions Units Min. Max. VDC-RF DC Voltage to RF Ports V -0.6 +1.6 V1 V1 Control Voltage V -10.5 +0.5 V2 V2 Control Voltage V -10.5 +0.5 VDC DC In/DC Out V -0.6 +1.0 PIN RF Input Power dBm Tmina Min. Ambient Operating Temp. °C Tmaxa Max. Ambient Operating Temp. °C Tstg Storage Temperature °C Tmax Max. Assembly Temp. (for 60 sec. max.) °C 17 -55 +125 -65 Note: 1. Operation in excess of any one of these conditions may result in damage to this device. +165 +300 HMMC-1015 DC Specifications/Physical Properties, TA = 25°C Symbol Parameters and Test Conditions Units Min. Typ. Max. I V1 V1 Control Current, (V1 = -10V) mA 5.0 5.9 7.1 I V2 V2 Control Current, (V2 = -10V) mA 5.0 5.9 7.1 VP Pinch-Off Voltage V -6.75 -5.0 -3.75 Freq. (GHz) Min. Typ. Max. 1.0 1.4 1.7 2.0 3.9 2.4 2.4 2.4 2.4 Electrical Specifications[1], TA = 25°C, ZO = 50Ω Parameters and Test Conditions Units Minimum Attenuation, |S21| (V1 = 0 V, V2 = -10 V) dB Input/Output Return Loss @ Min. Attenuation Setting, (V1 = 0 V, V2 = -10 V) dB 1.5 8.0 20.00 26.5 50.0 <26.5 <50.0 10 16 8 27 27 27 27 30 38 38 40 35 Maximum Attenuation, |S21| (V1 = -10 V, V2 = 0 V) dB 1.5 8.0 20.0 26.5 50.0 P-1dB @ Minumum Attenuation dBm dBm 300 kHz >500 MHz Input/Output Return Loss @ Max. Attenuation Setting, (V1 = -10V, V2 = 0V) dB dB <26.5 <50.0 DC Power Dissipation, V1 = -10.5 V, V2 = -10.5 V (does not include input signals) mW 18.5 27 8 Note: 1. Attenuation is a positive number; whereas, S21 as measured on a Network Analyzer would be a negative number. 2 10 10 158 Application The HMMC-1015 is designed to be used as a gain control block in an ALC assembly. Because of its wide dynamic range and return loss performance, the HMMC-1015 may also be used as a broadband pulse modulator or single-pole singlethrow, non-reflective switch. sufficient input and output match over the desired attenuation range (V2). For any HMMC-1015 the values of V1 may be adjusted so that the device attenuation versus voltage is monotonic for both V1 and V2; however, this will slightly degrade the input and output return loss. Operation The attenuation value of the HMMC-1002 is adjusted by applying negative voltage to V2. At any attenuation setting, optimum VSWR is obtained by applying negative voltage to V1. Applying negative voltage (V2) to the gates of the shunt FETs sets the source-to-drain resistance and establishes the attenuation level. Applying negative voltage (V1) to the gates of the series FETs optimizes the input and output match for different attenuation settings. In some applications, a single setting of V1 may provide The attenuation and input/ output match of the HMMC-1015 may also be controlled using only a single input voltage by utilizing the on-chip DC reference circuit and the driver circuit shown in Figure 4. This circuit optimizes VSWR for any attenuation setting. Because of process variations, the values of VREF, RREF, and RL are different for each wafer if optimum performance is required. Typical values for these elements are given. The ratio of the resistors R1 and R2 determines the sensitivity of the attenuation versus voltage 50 performance of the attenuator. For more information on the performance of the HMMC-1015 and the driver circuits previously mentioned see MWTC’s Application Note #37, “HMMC-1021 Attenuator: Attenuation Control.” For more S-parameter information, see MWTC’s Application Note #44, “HMMC-1015 Attenuator: S-Parameters.” Assembly Techniques GaAs MMICs are ESD sensitive. ESD preventive measures must be employed in all aspects of storage, handling, and assembly. MMIC ESD precautions, handling considerations, die attach and bonding methods are critical factors in successful GaAs MMIC performance and reliability. Agilent application note #54, “GaAs MMIC ESD, Die Attach and Bonding Guidelines” provides basic information on these subjects. 50 50Ω RF Attenuator Circuit RFIN RFOUT 500 DCIN Figure 1. HMMC-1015 Schematic. 3 V1 500 500Ω DC Reference Circuit V2 DCOUT 610 233 233 0 0 476 584 887 994 1410 1470 Notes: 1. All dimensions in microns and shown to center of bond pad. 2. DCin, V1, DCout, and V2 bonding pads are 75 x 75 microns. 3. RF input and output bonding pads are 60 x 70 microns. 4. Chip thickness: 127 ± 15 µm. Figure 2. HMMC-1015 Bonding Pad Locations. 2.0 mil nom. gap RFIN RFOUT TC721R 4 Wire Bonds using 0.7 mil dia. Gold Bond Wire (length NOT important) DCIN Figure 3. HMMC-1015 Assembly Diagram. 4 V1 DCOUT V2 To DCOUT To DCIN To V1 To V2 RL (400Ω – 500Ω) A 500Ω Op. Amp – VREF VIN (0V to -10.0V) + (-0.4V to -1.0V) 500Ω B RREF (350Ω – 500Ω) Figure 4. Attenuator Driver. HMMC-1015 Typical Performance 0 0 10 10 20 RETURN LOSS (dB) ATTENUATION (dB) Maximum Attenuation 30 40 Minimum Attenuation 30 40 50 50 60 60 1 3 5 7 9 11 13 15 17 19 21 23 25 27 FREQUENCY (GHz) Figure 5. Attenuation vs. Frequency.[1] Note: 1. Data obtained from on-wafer measurements. Tchuck = 25°C. 5 20 1 3 5 7 9 11 13 15 17 19 21 FREQUENCY (GHz) Figure 6. Output Return Loss vs. Frequency.[1] 23 25 27 HMMC-1015 Typical Temperature Performance All Attenuation Settings were done at 1 GHz. 0 0 10 1 ATTENUATION S21 (dB) ATTENUATION S21 (dB) 20 2 3 4 30 40 50 60 5 70 6 80 1 3 5 7 9 11 13 15 17 19 21 23 25 27 FREQUENCY (GHz) Figure 7. Attenuation vs. Temperature @ Minimum Attenuation.[1] Note: 1. Data taken with the device mounted in connectorized package. 6 1 3 5 7 9 11 13 15 17 19 21 23 FREQUENCY (GHz) Figure 8. Attenuation vs. Temperature @ Maximum Attenuation.[1] Key for Temperature Settings: -55°C -25°C 0° C +25°C +55°C +85°C 25 27 This data sheet contains a variety of typical and guaranteed performance data. The information supplied should not be interpreted as a complete list of circuit specifications. In this data sheet the term typical refers to the 50th percentile performance. For additional information contact your local Agilent Technologies’ sales representative. www.semiconductor.agilent.com Data subject to change. Copyright © 2001 Agilent Technologies, Inc. Obsoletes 5968-4446E May 18, 2001 5988-2547EN