ETC HMMC-1015

Agilent HMMC-1015
DC–50 GHz Variable Attenuator
Data Sheet
Features
• Specified Frequency Range:
DC–26.5 GHz
• Pin (-1dB):
27 dBm @ 500 MHz
• Return Loss:
10 dB
• Minimum Attenuation:
2.0 dB
Chip Size:
1470 x 610 µm (57.9 x 24.0 mils)
Chip Size Tolerance:
±10 µm (±0.4 mils)
Chip Thickness:
127 ± 15 µm (5.0 ± 0.6 mils)
Description
The HMMC-1015 is a monolithic,
voltage variable, GaAs IC attenuator that operates from DC to
50 GHz. The distributed topology
of the HMMC-1015 minimizes the
parasitic effects of its series and
shunt FETs, allowing the
HMMC-1015 to exhibit a wide
dynamic range across its full
bandwidth. An on-chip DC
reference circuit may be used to
maintain optimum VSWR for any
attenuation setting or to improve
the attenuation versus voltage
linearity of the attenuator circuit.
• Maximum Attenuation:
30.0 dB
Absolute Maximum Ratings [1]
Symbol
Parameters/Conditions
Units
Min.
Max.
VDC-RF
DC Voltage to RF Ports
V
-0.6
+1.6
V1
V1 Control Voltage
V
-10.5
+0.5
V2
V2 Control Voltage
V
-10.5
+0.5
VDC
DC In/DC Out
V
-0.6
+1.0
PIN
RF Input Power
dBm
Tmina
Min. Ambient Operating Temp.
°C
Tmaxa
Max. Ambient Operating Temp.
°C
Tstg
Storage Temperature
°C
Tmax
Max. Assembly Temp. (for 60 sec. max.)
°C
17
-55
+125
-65
Note:
1. Operation in excess of any one of these conditions may result in damage to this device.
+165
+300
HMMC-1015 DC Specifications/Physical Properties, TA = 25°C
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
I V1
V1 Control Current, (V1 = -10V)
mA
5.0
5.9
7.1
I V2
V2 Control Current, (V2 = -10V)
mA
5.0
5.9
7.1
VP
Pinch-Off Voltage
V
-6.75
-5.0
-3.75
Freq.
(GHz)
Min.
Typ.
Max.
1.0
1.4
1.7
2.0
3.9
2.4
2.4
2.4
2.4
Electrical Specifications[1], TA = 25°C, ZO = 50Ω
Parameters and Test Conditions
Units
Minimum Attenuation, |S21| (V1 = 0 V, V2 = -10 V)
dB
Input/Output Return Loss @ Min. Attenuation Setting,
(V1 = 0 V, V2 = -10 V)
dB
1.5
8.0
20.00
26.5
50.0
<26.5
<50.0
10
16
8
27
27
27
27
30
38
38
40
35
Maximum Attenuation, |S21| (V1 = -10 V, V2 = 0 V)
dB
1.5
8.0
20.0
26.5
50.0
P-1dB @ Minumum Attenuation
dBm
dBm
300 kHz
>500 MHz
Input/Output Return Loss @ Max. Attenuation Setting,
(V1 = -10V, V2 = 0V)
dB
dB
<26.5
<50.0
DC Power Dissipation, V1 = -10.5 V, V2 = -10.5 V
(does not include input signals)
mW
18.5
27
8
Note:
1. Attenuation is a positive number; whereas, S21 as measured on a Network Analyzer would be a negative number.
2
10
10
158
Application
The HMMC-1015 is designed to be
used as a gain control block in an
ALC assembly. Because of its wide
dynamic range and return loss
performance, the HMMC-1015 may
also be used as a broadband pulse
modulator or single-pole singlethrow, non-reflective switch.
sufficient input and output
match over the desired attenuation range (V2). For any
HMMC-1015 the values of V1 may
be adjusted so that the device
attenuation versus voltage is
monotonic for both V1 and V2;
however, this will slightly degrade the input and output
return loss.
Operation
The attenuation value of the
HMMC-1002 is adjusted by applying negative voltage to V2. At any
attenuation setting, optimum
VSWR is obtained by applying
negative voltage to V1. Applying
negative voltage (V2) to the gates
of the shunt FETs sets the
source-to-drain resistance and
establishes the attenuation level.
Applying negative voltage (V1) to
the gates of the series FETs optimizes the input and output
match for different attenuation
settings. In some applications, a
single setting of V1 may provide
The attenuation and input/
output match of the HMMC-1015
may also be controlled using only
a single input voltage by utilizing
the on-chip DC reference circuit
and the driver circuit shown in
Figure 4. This circuit optimizes
VSWR for any attenuation
setting. Because of process
variations, the values of VREF,
RREF, and RL are different for
each wafer if optimum performance is required. Typical values
for these elements are given. The
ratio of the resistors R1 and R2
determines the sensitivity of the
attenuation versus voltage
50
performance of the attenuator.
For more information on the
performance of the HMMC-1015
and the driver circuits previously
mentioned see MWTC’s Application Note #37, “HMMC-1021
Attenuator: Attenuation Control.” For more S-parameter
information, see MWTC’s Application Note #44, “HMMC-1015
Attenuator: S-Parameters.”
Assembly Techniques
GaAs MMICs are ESD sensitive.
ESD preventive measures must
be employed in all aspects of
storage, handling, and assembly.
MMIC ESD precautions, handling
considerations, die attach and
bonding methods are critical
factors in successful GaAs MMIC
performance and reliability.
Agilent application note #54,
“GaAs MMIC ESD, Die Attach
and Bonding Guidelines” provides basic information on these
subjects.
50
50Ω RF Attenuator Circuit
RFIN
RFOUT
500
DCIN
Figure 1. HMMC-1015 Schematic.
3
V1
500
500Ω DC Reference Circuit
V2
DCOUT
610
233
233
0
0
476
584
887
994
1410
1470
Notes:
1. All dimensions in microns and shown to center of bond pad.
2. DCin, V1, DCout, and V2 bonding pads are 75 x 75 microns.
3. RF input and output bonding pads are 60 x 70 microns.
4. Chip thickness: 127 ± 15 µm.
Figure 2. HMMC-1015 Bonding Pad Locations.
2.0 mil
nom. gap
RFIN
RFOUT
TC721R
4 Wire Bonds using 0.7 mil dia.
Gold Bond Wire
(length NOT important)
DCIN
Figure 3. HMMC-1015 Assembly Diagram.
4
V1
DCOUT
V2
To
DCOUT
To
DCIN
To
V1
To
V2
RL
(400Ω – 500Ω)
A
500Ω
Op. Amp
–
VREF
VIN
(0V to -10.0V)
+
(-0.4V to -1.0V)
500Ω
B
RREF
(350Ω – 500Ω)
Figure 4. Attenuator Driver.
HMMC-1015 Typical Performance
0
0
10
10
20
RETURN LOSS (dB)
ATTENUATION (dB)
Maximum
Attenuation
30
40
Minimum
Attenuation
30
40
50
50
60
60
1
3
5
7
9
11
13 15
17
19
21
23
25
27
FREQUENCY (GHz)
Figure 5. Attenuation vs. Frequency.[1]
Note:
1. Data obtained from on-wafer measurements. Tchuck = 25°C.
5
20
1
3
5
7
9
11
13 15
17
19
21
FREQUENCY (GHz)
Figure 6. Output Return Loss vs. Frequency.[1]
23
25
27
HMMC-1015 Typical Temperature Performance
All Attenuation Settings were done at 1 GHz.
0
0
10
1
ATTENUATION S21 (dB)
ATTENUATION S21 (dB)
20
2
3
4
30
40
50
60
5
70
6
80
1
3
5
7
9
11
13 15
17
19
21
23
25
27
FREQUENCY (GHz)
Figure 7. Attenuation vs. Temperature @
Minimum Attenuation.[1]
Note:
1. Data taken with the device mounted in connectorized package.
6
1
3
5
7
9
11
13 15
17
19
21
23
FREQUENCY (GHz)
Figure 8. Attenuation vs. Temperature @
Maximum Attenuation.[1]
Key for Temperature Settings:
-55°C
-25°C
0° C
+25°C
+55°C
+85°C
25
27
This data sheet contains a variety of typical and guaranteed performance data. The information supplied should
not be interpreted as a complete list of circuit specifications. In this data sheet the term typical refers to the 50th
percentile performance. For additional information contact your local Agilent Technologies’ sales representative.
www.semiconductor.agilent.com
Data subject to change.
Copyright © 2001 Agilent Technologies, Inc.
Obsoletes 5968-4446E
May 18, 2001
5988-2547EN