ETC 2SJ388(S)

2SJ388(L), 2SJ388(S)
Silicon P-Channel MOS FET
November 1996
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
2.5 V Gate drive device can be driven from 3 V Source
Suitable for Switching regulator, DC - DC converter
Outline
DPAK-2
4
4
1
1
2
2
3
3
D
1. Gate
2. Drain
3. Source
4. Drain
G
S
2SJ388(L), 2SJ388(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
–30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–10
A
–40
A
–10
A
20
W
Drain peak current
ID(pulse)*
Body to drain diode reverse drain current
IDR
2
1
Channel dissipation
Pch*
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
2
2SJ388(L), 2SJ388(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
–30
—
—
V
ID = –10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current IDSS
—
—
–100
µA
VDS = –25 V, VGS = 0
Gate to source cutoff voltage
–0.5
—
–1.5
V
ID = –1 mA, VDS = –10 V
—
0.06
0.08
Ω
ID = –5 A
1
VGS = –10 V*
—
0.12
0.2
Ω
ID = –5 A
1
VGS = –2.5 V*
VGS(off)
Static drain to source on state RDS(on)
resistance
Forward transfer admittance
|yfs|
4.5
8
—
S
ID = –5 A
1
VDS = –10 V*
Input capacitance
Ciss
—
970
—
pF
VDS = –10 V
Output capacitance
Coss
—
620
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
250
—
pF
f = 1 MHz
Turn-on delay time
td(on)
—
10
—
ns
ID = –5 A
Rise time
tr
—
65
—
ns
VGS = –10 V
Turn-off delay time
td(off)
—
250
—
ns
RL = 6 Ω
Fall time
tf
—
240
—
ns
Body to drain diode forward
voltage
VDF
—
–1.0
—
V
IF = –10 A, VGS = 0
Body to drain diode reverse
recovery time
trr
—
85
—
µs
IF = –10 A, VGS = 0,
diF/dt = 20 A/µs
Note
1. Pulse Test
3
2SJ388(L), 2SJ388(S)
Power vs. Temperature Derating
Channel Dissipation
Pch (W)
30
20
10
0
50
100
Case Temperature
4
Tc (°C)
150
2SJ388(L), 2SJ388(S)
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of this document without Hitachi’s permission.
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performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
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examples described herein.
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or Hitachi, Ltd.
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APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
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5