HITACHI 2SJ172

2SJ172
Silicon P-Channel MOS FET
November 1996
Application
High speed power switching
Features
•
•
•
•
Low on-resistance
High speed switching
Low drive current
4 V gate drive device
 Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-220AB
D
1
2
3
1. Gate
2. Drain
(Flange)
3. Source
G
S
2SJ172
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
–60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–10
A
–40
A
–10
A
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
1
2
Channel dissipation
Pch*
40
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
–60
—
—
V
I D = –10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
250
µA
VDS = –50 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
–1.0
—
–2.0
V
I D = –1 mA, VDS = –10 V
Static drain to source on state
RDS(on)
—
0.13
0.18
Ω
I D = –5 A, VGS = –10 V*1
—
0.18
0.25
resistance
I D = –5 A, VGS = –4 V*1
Forward transfer admittance
|yfs|
4.0
6.5
—
S
I D = –5 A, VDS = –10 V*1
Input capacitance
Ciss
—
900
—
pF
VDS = –10 V, VGS = 0,
Output capacitance
Coss
—
460
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
130
—
pF
Turn-on delay time
t d(on)
—
8
—
ns
I D = –5 A, VGS = –10 V,
Rise time
tr
—
65
—
ns
RL = 6 Ω
Turn-off delay time
t d(off)
—
170
—
ns
Fall time
tf
—
105
—
ns
Body to drain diode forward
voltage
VDF
—
–1.1
—
V
I F = –10 A, VGS = 0
Body to drain diode reverse
recovery time
t rr
—
200
—
ns
I F = –10 A, VGS = 0,
diF/dt = 50 A/µs
Note
2
1. Pulse test
2SJ172
Power vs. Temperature Derating
Maximum Safe Operation Area
–100
10 µs
s
s
m tion
a
er
Op
sh
)
)
°C
25
Operation in this area
is limited by RDS(on)
ot
=
(T C
–1.0
(1
–3
–0.3
0
50
100
Case Temperature TC (°C)
150
Ta = 25°C
–0.1
–10 –30 –100
–0.1 –0.3 –1.0 –3
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
Typical Output Characteristics
–16
Pulse Test
–4.5 V
–5 V
–7 V
–10
–8
–4 V
–12
–3.5 V
–8
–3 V
Drain Current ID (A)
–20
–10 V
Drain Current ID (A)
µs
m
10
DC
20
0
–10
1
40
10
=
Drain Current ID (A)
–30
PW
Channel Dissipation Pch (W)
60
–6
–4
–2
–4
VGS = –2.5 V
0
–8
–20
–4
–12
–16
Drain to Source Voltage VDS (V)
VDS = –10 V
Pulse Test
0
75°C
TC = 25°C
–25°C
–2
–5
–1
–3
–4
Gate to Source Voltage VGS (V)
3
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
Static Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Saturation Voltage VDS (on) (V)
2SJ172
–2.0
Pulse Test
–1.6
ID = –10 A
–1.2
–0.8
–5 A
–0.4
–2 A
0
5
2
1.0
0.5
0.2
ID = –10 A
0.1
0
–40
–5 A
–2 A
–10 A
–5 A
–2 A
VGS = –10 V
40
0
80
120
Case Temperature TC (°C)
160
Forward Transfer Admittance yfs (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
4
Pulse Test
0.2
–2
–5 –10 –20
Drain Current ID (A)
–50
Forward Transfer Admittance
vs. Drain Current
0.5
VGS = –4 V
–10 V
0.1
Static Drain to Source on State
Resistance vs. Temperature
0.3
VGS = –4 V
0.05
–0.5 –1.0
–2
–6
–8
–4
–10
Gate to Source Voltage VGS (V)
0.4
Pulse Test
50
20
VGS = 10 V
Pulse Test
10
–25°C
TC = 25°C
75°C
5
2
1.0
0.5
–0.1 –0.2
–0.5 –1.0 –2
Drain Current ID (A)
–5
–10
2SJ172
Typical Capacitance vs.
Drain to Source Voltage
Body to Drain Diode Reverse
Recovery Time
10,000
VGS = 0
f = 1 MHz
200
Capacitance C (pF)
Reverse Recovery Time trr (ns)
500
100
50
di/dt = 50 A/µs, Ta = 25°C
VGS = 0
Pulse Test
20
10
5
–0.2
Ciss
1,000
Coss
Crss
100
10
0
–5
–0.5 –1.0 –2
–10 –20
Reverse Drain Current IDR (A)
Switching Characteristics
Dynamic Input Characteristics
–25 V
–20
ID = –10 A
–4
–8
–40
–50 V
VDS
–60
VGS
VDD = –50 V
–12
–25 V
–10 V
–16
–80
–100
0
20
60
80
40
Gate Charge Qg (nc)
–20
100
td (off)
Switching Time t (ns)
VDD = –10 V
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
500
0
0
–10
–20
–30
–40
–50
Drain to Source Voltage VDS (V)
200
100
tf
50
20
tr
10
td (on)
5
–0.2
PW = 10 µs, VGS = –10 V
.
duty < 1% VDD =. 30V
–0.5 –1.0 –2
–5 –10
Drain Current ID (A)
–20
5
2SJ172
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
–20
Pulse Test
–16
–12
–8
–10 V
–5 V
–4
VGS = 0, 5 V
–0.4
–1.2 –1.6
–0.8
–2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance γS (t)
0
Normalized Transient Thermal Impedance vs. Pulse Width
3
1.0
TC = 25°C
D=1
0.5
0.3
0.2
0.1
0.05
θch–c (t) = γS (t) · θch–c
θch–c = 3.13°C/W, TC = 25°C
0.1
PDM
0.02
0.03
e
1
0.0 Puls
t
o
h
1S
0.01
10 µ
T
100 µ
1m
10 m
Pulse Width PW (s)
100 m
PW
D = PW
T
1
10
Waveforms
Vin
Switching Time Test Circuit
10%
Vin Monitor
Vout Monitor
90%
D.U.T
50 Ω
Vin
–10 V
6
VDD
.
=. 30 V
90%
90%
RL
Vout
10%
td (on)
tr
10%
td (off)
tf
2SJ172
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of
this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual
property claims or other problems that may result from applications based on the examples described
herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party or
Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan
Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
For further information write to:
Hitachi America, Ltd.
Semiconductor & IC Div.
2000 Sierra Point Parkway
Brisbane, CA. 94005-1835
USA
Tel: 415-589-8300
Fax: 415-583-4207
Hitachi Europe GmbH
Electronic Components Group
Continental Europe
Dornacher Straße 3
D-85622 Feldkirchen
München
Tel: 089-9 91 80-0
Fax: 089-9 29 30 00
Hitachi Europe Ltd.
Electronic Components Div.
Northern Europe Headquarters
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA
United Kingdom
Tel: 0628-585000
Fax: 0628-778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 0104
Tel: 535-2100
Fax: 535-1533
Hitachi Asia (Hong Kong) Ltd.
Unit 706, North Tower,
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon
Hong Kong
Tel: 27359218
Fax: 27306071
7