ETC 2SJ215

2SJ215
Silicon P-Channel MOS FET
November 1996
Application
High speed power switching
Features
•
•
•
•
Low on-resistance
High speed switching
Low drive current
4 V gate drive device
 Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-3P
D
1
G
2
3
1. Gate
2. Drain
S
(Flange)
3. Source
2SJ215
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
–60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–35
A
–140
A
–35
A
125
W
Drain peak current
ID(pulse)*
Body to drain diode reverse drain current
IDR
2
1
Channel dissipation
Pch*
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
2
2SJ215
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
–60
—
—
V
ID = –10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current IDSS
—
—
–250
µA
VDS = –50 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
–1.0
—
–2.0
V
ID = –1 mA, VDS = –10 V
Static drain to source on state
resistance
RDS(on)
—
0.045
0.06
Ω
ID = –18 A, VGS = –10 V*
—
0.07
0.09
ID = –18 A, VGS = –4 V*
1
Forward transfer admittance
|yfs|
11
18
—
S
ID = –18 A, VDS = –10 V*
Input capacitance
Ciss
—
2400
—
pF
VDS = –10 V, VGS = 0,
f = 1 MHz
Output capacitance
Coss
—
1300
—
pF
Reverse transfer capacitance
Crss
—
340
—
pF
Turn-on delay time
td(on)
—
20
—
ns
Rise time
tr
—
175
—
ns
Turn-off delay time
td(off)
—
460
—
ns
Fall time
tf
—
320
—
ns
Body to drain diode forward
voltage
VDF
—
–1.3
—
V
IF = –35 A, VGS = 0
Body to drain diode reverse
recovery time
trr
—
250
—
ns
IF = –35 A, VGS = 0,
diF/dt = 50 A/µs
Note
1
1
ID = –15 A, VGS = –10 V,
RL = 2 Ω
1. Pulse test
3
2SJ215
Power vs. Temperature Derating
Channel Dissipation Pch (W)
150
100
50
0
50
100
Case Temperature TC (°C)
150
Maximum Safe Operation Area
–200
(o
n)
ar
ea
10 µs
10
Drain Current ID (A)
DS
O
is per
lim at
ite ion
d in
by th
R is
–100
–50
0
PW
D
C
–20
1
O
=
pe
10
s
m
s
ra
tio
–10
n
(1
sh
ot
(T
C
–5
)
=
25
°C
)
Ta = 25°C
–2
–1
µs
m
–2
–5 –10 –20
–50 –100
Drain to Source Voltage VDS (V)
Typical Output Characteristics
–100
–10 V
–8 V
–6 V
Drain Current ID (A)
–80
Pulse Test
–5 V
–60
–40
–4 V
–20
VGS = –3 V
0
–4
–12
–16
–8
–20
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
–50
Drain Current ID (A)
–40
VDS = –10 V
Pulse Test
TC = –25°C
25°C
75°C
–30
–20
–10
0
4
–2
–1
–3
–4
Gate to Source Voltage VGS (V)
–5
Drain to Source Saturation Voltage VDS (on) (V)
2SJ215
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
–5
Pulse Test
–4
–3
–50 A
–2
–20 A
–1
ID = –10 A
0
–4
–12
–16
–8
–20
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State
Resistance vs. Drain Current
1
Pulse Test
0.5
0.2
0.1
VGS = –4 V
–10 V
0.05
0.02
0.01
–2
–5
–50 –100 –200
–10 –20
Drain Current ID (A)
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State
Resistance vs. Temperature
0.1
0.08
0.06
ID = –20 A
VGS = –4 V
VGS = –10 V
0.04
–10 A
ID = –50 A
–20 A
–10 A
0.02
Pulse Test
0
–40
40
0
80
120
Case Temperature TC (°C)
160
5
2SJ215
Forward Transfer Admittance yfs (S)
Forward Transfer Admittance
vs. Drain Current
100
VDS = –10 V
Pulse Test
50
–25°C
TC = 25°C
75°C
20
10
5
2
1
–1
–2
–5 –10 –20
–50 –100
Drain Current ID (A)
Body to Drain Diode Reverse
Recovery Time
Reverse Recovery Time trr (ns)
1,000
500
200
100
50
di/dt = 50 A/µs, VGS = 0
Ta = 25°C
Pulse Test
20
10
–1
–5 –10 –20
–2
–50 –100
Reverse Drain Current IDR (A)
Typical Capacitance vs.
Drain to Source Voltage
1,000
Capacitance C (pF)
500
Ciss
200
100
Coss
50
20
Crss
f = 1 MHz
VGS = 0
10
0
–20
–50
–10
–30
–40
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Drain to Source Voltage VDS (V)
VDD = –10 V
–25 V
–50 V
–20
VGS
–40
–4
VDD = –10 V
–25 V
VDS
–60
–12
–80
–16
ID = –35 A
–100
0
6
–8
–50 V
40
120
160
80
Gate Charge Qg (nc)
–20
200
Gate to Source Voltage VGS (V)
0
0
2SJ215
Switching Characteristics
1,000
td (off)
Switching Time t (ns)
500
tf
200
100
tr
VGS = –10 V, PW = 5 µs
.
VDD =. –30 V, duty <
= 1%
50
td (on)
20
10
–1
–2
–5 –10 –20
–50 –100
Drain Current ID (A)
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
–100
–80
Pulse Test
–60
–40
–10 V
–5 V
VGS = 0,5 V
–20
0
–1.0
–2.5
–0.5
–1.5
–2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance γS (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
TC = 25°C
D=1
0.5
0.3
0.2
0.1
θch–c (t) = γS (t) · θch–c
θch–c = 1.0°C/W, TC = 25°C
0.1
0.05
PDM
0.02
0.03
e
0.01 ot Puls
h
1S
0.01
10 µ
T
100 µ
1m
10 m
Pulse Width PW (s)
100 m
D = PW
T
PW
1
10
7
2SJ215
Switching Time Test Circuit
Vin Monitor
Vout Monitor
D.U.T.
RL
Vin
–10 V
VDD = 30 V
50 Ω
Waveforms
Vin
10%
90%
90%
90%
Vout
td (on)
8
10%
10%
tr
td (off)
tf
2SJ215
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1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part
of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party
or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
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