TIP31A/31C TIP32A/32B/32C COMPLEMENTARY SILICON POWER TRANSISTORS APPLICATION ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The TIP31A and TIP31C are silicon Epitaxial-Base NPN transistors mounted in Jedec TO-220 plastic package. They are intented for use in medium power linear and switching applications. The complementary PNP types are TIP32A and TIP32C respectively. Also TIP32B is a PNP type. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value NPN TIP31A PNP TIP32A Un it TIP31C T IP32B TIP32C V CBO Collector-Base Voltage (IE = 0) 60 80 100 V V CEO Collector-Emitter Voltage (IB = 0) 60 80 100 V VEBO Emitter-Base Voltage (IC = 0) 5 V IC Collector Current 3 A ICM Collector Peak Current 5 A Base Current 1 A 40 2 W W IB P tot Ts tg Tj T otal Dissipation at Tc ase ≤ 25 o C T amb ≤ 25 o C Storage Temperature Max. Operating Junction Temperature -65 to 150 o C 150 o C For PNP types voltage and current values are negative October 1999 1/5 TIP31A/TIP31C/TIP32A/TIP32B/TIP32C THERMAL DATA R thj -case R thj -amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 3.12 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l Max. Unit I CEO Collector Cut-off Current (IB = 0) Parameter for T IP31A/32A for T IP31C/32B/32C V CE = 30 V V CE = 60 V 0.3 0.3 mA mA I CES Collector Cut-off Current (VBE = 0) for T IP31A/32A for T IP/ 32B for T IP31C/32C V CE = 60 V VCE = 80 V V CE = 100 V 0.2 0.2 0.2 mA mA mA IEBO Emitter Cut-off Current (I C = 0) V EB = 5 V 1 mA V CEO(s us) ∗ Collector-Emitt er Sustaining Voltage (I B = 0) Test Con ditions I C = 30 mA for TIP31A/32A for TIP32B for TIP31C/32C Collector-Emitt er Saturation Voltage IC = 3 A V BE(on) ∗ Base-Emitter Voltage IC = 3 A V CE = 4 V DC Current G ain IC = 1 A IC = 3 A V CE = 4 V V CE = 4 V Small Signall Current Gain I C = 0.5 A I C = 0.5 A h fe I B = 375 mA V CE = 10 V f = 1 KHz V CE = 10 V f = 1 MHz ∗ Pulsed : pulse duration = 300 µs, duty cycle ≤ 2% For PNP types voltage and current values are negative. Safe Operating Area 2/5 Typ. 60 80 100 V CE(sat) ∗ h FE∗ Min. Derating Curves 25 10 20 3 V V V 1.2 V 1.8 V 50 TIP31A/TIP31C/TIP32A/TIP32B/TIP32C DC Current Gain (NPN type) DC Current Gain (PNP type) Collector-Emitter Saturation Voltage (NPN type) Collector-Emitter Saturation Voltage (PNP type) Base-Emitter Saturation Voltage (NPN type) Collector-Base Capacitance (PNP type) 3/5 TIP31A/TIP31C/TIP32A/TIP32B/TIP32C TO-220 MECHANICAL DATA mm DIM. MIN. MAX. MIN. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 TYP. inch 1.27 TYP. MAX. 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 P011C 4/5 TIP31A/TIP31C/TIP32A/TIP32B/TIP32C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 5/5