Ordering number : ENN7155 CPH6601 P-Channel Silicon MOSFET CPH6601 Ultrahigh-Speed Switching Applications Preliminary Features • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2202 [CPH6601] 0.15 2.9 5 4 0.6 6 0.2 • 0.6 1.6 2.8 0.05 3 0.95 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 0.2 2 0.7 0.9 1 0.4 Specifications SANYO : CPH6 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 V Gate-to-Source Voltage VGSS ±10 V ID --1.5 A Drain Current (DC) Drain Current (Pulse) IDP PD PW≤10µs, duty cycle≤1% PD Tch Mounted on a ceramic board (900mm2✕0.8mm) Channel Temperature Storage Temperature Tstg Allowable Power Dissipation Total Power Dissipation Mounted on a ceramic board (900mm2✕0.8mm)1unit --6.0 A 0.9 W 1.2 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS IGSS Conditions ID=--1mA, VGS=0 VDS=--20V, VGS=0 VGS(off) yfs VGS=±8V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=--0.8A RDS(on)1 RDS(on)2 ID=--0.8A, VGS=--4V ID=--0.4A, VGS=--2.5V Ratings min typ Unit max --20 V Marking : FL µA ±10 µA --1.3 V 180 235 mΩ 240 340 mΩ --0.4 1.6 --1 2.3 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 80902 TS IM TA-3620 No.7155-1/4 CPH6601 Continued from preceding page. Parameter Symbol Ratings Conditions min typ max Unit Input Capacitance Ciss pF Coss VDS=--10V, f=1MHz VDS=--10V, f=1MHz 290 Output Capacitance 40 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 25 pF Turn-ON Delay Time td(on) See specified Test Circuit. 10 ns Rise Time tr td(off) See specified Test Circuit. 35 ns See specified Test Circuit. 32 ns tf See specified Test Circuit. 27 ns Turn-OFF Delay Time Fall Time Total Gate Charge Qg VDS=--10V, VGS=--4V, ID=--1.5A 3.2 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--4V, ID=--1.5A 0.8 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--4V, ID=--1.5A 0.6 Diode Forward Voltage VSD IS=--1.5A, VGS=0 Electrical Connection 6 5 2 V VDD= --10V VIN 0V --4V ID= --0.8A RL=12.5Ω VOUT VIN D PW=10µs D.C.≤1% G Top view 3 --1.5 Switching Time Test Circuit 4 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 1 nC --0.87 CPH6601 P.G ID -- VDS --0.8 --0.6 --1.0 --0.8 --0.6 --0.4 --0.4 --0.2 --0.2 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 0 --1.0 400 300 --0.8A 100 0 0 --1 --2 --3 --4 --5 --6 --7 --8 Gate-to-Source Voltage, VGS -- V --9 --10 IT02656 --1.5 --2.0 --2.5 IT02655 RDS(on) -- Ta 500 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 500 --1.0 Gate-to-Source Voltage, VGS -- V Ta=25°C ID= --0.4A --0.5 IT02654 RDS(on) -- VGS 600 200 25° C --1.0 --1.2 C VGS= --1.5V 5°C --1.2 --1.4 --25 ° --1.4 Ta= 7 V --1.6 --6.0 Drain Current, ID -- A --1.6 VDS= --10V --1.8 Drain Current, ID -- A V --4. 0 --1.8 S ID -- VGS --2.0 --3. 0 --2 V .5V --2 .0V --2.0 50Ω 400 .5V = --2 VGS , A --0.4 V I D= = --4.0 A, V GS .8 0 -I D= 300 200 100 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT02657 No.7155-2/4 CPH6601 yfs -- ID 3 2 5°C --2 = Ta °C 75 1.0 7 5 °C 25 3 3 2 --0.1 7 5 2 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Drain Current, ID -- A 0 3 --0.4 --0.6 --0.8 --1.0 --1.2 Diode Forward Voltage, VSD -- V --1.4 IT02659 Ciss, Coss, Crss -- VDS 1000 VDD= --10V VGS= --4V 7 --0.2 IT02658 SW Time -- ID 100 f=1MHz 7 5 td(off) 5 3 tf 2 tr td(on) Ciss 3 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns --1.0 7 5 3 2 0.1 --0.01 2 100 7 5 Coss 7 3 Crss 5 2 10 3 10 3 5 7 2 --0.1 3 5 7 --1.0 2 3 Drain Current, ID -- A 5 0 --10 7 5 VDS= --10V ID= --1.5A 3 2 Drain Current, ID -- A --3 --2 --1 0 0.5 1 1.5 2 2.5 Total Gate Charge, Qg -- nC 3 3.5 IT04051 PD -- Ta 1.4 --15 --20 IT02661 ASO IDP= --6.0A <10µs 1m s 10 ID= --1.5A DC 0m s op era tio Operation in this area is limited by RDS(on). 3 2 ms 10 --1.0 7 5 n --0.1 7 5 3 2 0 --10 --5 Drain-to-Source Voltage, VDS -- V IT02660 VGS -- Qg --4 Gate-to-Source Voltage, VGS -- V 3 2 C 25°C --25°C 5 VGS=0 Ta=7 5° VDS= --10V 7 IF -- VSD --10 7 5 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 10 Ta=25°C Single pulse Mounted on a ceramic board(900mm2✕0.8mm)1unit --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT04052 Allowable Power Dissipation, PD -- W Mounted on a ceramic board(900mm2✕0.8mm)1unit 1.2 1.0 0.9 To t 0.8 al Di ss 1u 0.6 nit ip ati on 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT04053 No.7155-3/4 CPH6601 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2002. Specifications and information herein are subject to change without notice. PS No.7155-4/4