ETC CPH6601

Ordering number : ENN7155
CPH6601
P-Channel Silicon MOSFET
CPH6601
Ultrahigh-Speed Switching Applications
Preliminary
Features
•
•
Package Dimensions
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
unit : mm
2202
[CPH6601]
0.15
2.9
5
4
0.6
6
0.2
•
0.6
1.6
2.8
0.05
3
0.95
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
0.2
2
0.7
0.9
1
0.4
Specifications
SANYO : CPH6
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--20
V
Gate-to-Source Voltage
VGSS
±10
V
ID
--1.5
A
Drain Current (DC)
Drain Current (Pulse)
IDP
PD
PW≤10µs, duty cycle≤1%
PD
Tch
Mounted on a ceramic board (900mm2✕0.8mm)
Channel Temperature
Storage Temperature
Tstg
Allowable Power Dissipation
Total Power Dissipation
Mounted on a ceramic board (900mm2✕0.8mm)1unit
--6.0
A
0.9
W
1.2
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
V(BR)DSS
IDSS
IGSS
Conditions
ID=--1mA, VGS=0
VDS=--20V, VGS=0
VGS(off)
yfs
VGS=±8V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--0.8A
RDS(on)1
RDS(on)2
ID=--0.8A, VGS=--4V
ID=--0.4A, VGS=--2.5V
Ratings
min
typ
Unit
max
--20
V
Marking : FL
µA
±10
µA
--1.3
V
180
235
mΩ
240
340
mΩ
--0.4
1.6
--1
2.3
S
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
80902 TS IM TA-3620 No.7155-1/4
CPH6601
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
max
Unit
Input Capacitance
Ciss
pF
Coss
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
290
Output Capacitance
40
pF
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
25
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
10
ns
Rise Time
tr
td(off)
See specified Test Circuit.
35
ns
See specified Test Circuit.
32
ns
tf
See specified Test Circuit.
27
ns
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Qg
VDS=--10V, VGS=--4V, ID=--1.5A
3.2
nC
Gate-to-Source Charge
Qgs
VDS=--10V, VGS=--4V, ID=--1.5A
0.8
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--10V, VGS=--4V, ID=--1.5A
0.6
Diode Forward Voltage
VSD
IS=--1.5A, VGS=0
Electrical Connection
6
5
2
V
VDD= --10V
VIN
0V
--4V
ID= --0.8A
RL=12.5Ω
VOUT
VIN
D
PW=10µs
D.C.≤1%
G
Top view
3
--1.5
Switching Time Test Circuit
4
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
1
nC
--0.87
CPH6601
P.G
ID -- VDS
--0.8
--0.6
--1.0
--0.8
--0.6
--0.4
--0.4
--0.2
--0.2
0
0
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
Drain-to-Source Voltage, VDS -- V
--0.9
0
--1.0
400
300
--0.8A
100
0
0
--1
--2
--3
--4
--5
--6
--7
--8
Gate-to-Source Voltage, VGS -- V
--9
--10
IT02656
--1.5
--2.0
--2.5
IT02655
RDS(on) -- Ta
500
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
500
--1.0
Gate-to-Source Voltage, VGS -- V
Ta=25°C
ID= --0.4A
--0.5
IT02654
RDS(on) -- VGS
600
200
25°
C
--1.0
--1.2
C
VGS= --1.5V
5°C
--1.2
--1.4
--25
°
--1.4
Ta=
7
V
--1.6
--6.0
Drain Current, ID -- A
--1.6
VDS= --10V
--1.8
Drain Current, ID -- A
V
--4.
0
--1.8
S
ID -- VGS
--2.0
--3.
0
--2 V
.5V
--2
.0V
--2.0
50Ω
400
.5V
= --2
VGS
,
A
--0.4
V
I D=
= --4.0
A, V GS
.8
0
-I D=
300
200
100
0
--60
--40
--20
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
120
140
160
IT02657
No.7155-2/4
CPH6601
yfs -- ID
3
2
5°C
--2
=
Ta
°C
75
1.0
7
5
°C
25
3
3
2
--0.1
7
5
2
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
Drain Current, ID -- A
0
3
--0.4
--0.6
--0.8
--1.0
--1.2
Diode Forward Voltage, VSD -- V
--1.4
IT02659
Ciss, Coss, Crss -- VDS
1000
VDD= --10V
VGS= --4V
7
--0.2
IT02658
SW Time -- ID
100
f=1MHz
7
5
td(off)
5
3
tf
2
tr
td(on)
Ciss
3
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
--1.0
7
5
3
2
0.1
--0.01
2
100
7
5
Coss
7
3
Crss
5
2
10
3
10
3
5
7
2
--0.1
3
5
7 --1.0
2
3
Drain Current, ID -- A
5
0
--10
7
5
VDS= --10V
ID= --1.5A
3
2
Drain Current, ID -- A
--3
--2
--1
0
0.5
1
1.5
2
2.5
Total Gate Charge, Qg -- nC
3
3.5
IT04051
PD -- Ta
1.4
--15
--20
IT02661
ASO
IDP= --6.0A
<10µs
1m
s
10
ID= --1.5A
DC
0m
s
op
era
tio
Operation in this
area is limited by RDS(on).
3
2
ms
10
--1.0
7
5
n
--0.1
7
5
3
2
0
--10
--5
Drain-to-Source Voltage, VDS -- V
IT02660
VGS -- Qg
--4
Gate-to-Source Voltage, VGS -- V
3
2
C
25°C
--25°C
5
VGS=0
Ta=7
5°
VDS= --10V
7
IF -- VSD
--10
7
5
Forward Current, IF -- A
Forward Transfer Admittance, yfs -- S
10
Ta=25°C
Single pulse
Mounted on a ceramic board(900mm2✕0.8mm)1unit
--0.01
--0.1
2
3
5
7 --1.0
2
3
5
7 --10
Drain-to-Source Voltage, VDS -- V
2
3
IT04052
Allowable Power Dissipation, PD -- W
Mounted on a ceramic board(900mm2✕0.8mm)1unit
1.2
1.0
0.9
To
t
0.8
al
Di
ss
1u
0.6
nit
ip
ati
on
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT04053
No.7155-3/4
CPH6601
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of August, 2002. Specifications and information herein are subject
to change without notice.
PS No.7155-4/4