Ordering number:ENN6428 P-Channel Silicon MOSFET FTD1003 Load Switching Applications Package Dimensions · Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting. unit:mm 2155A [FTD1003] 3.0 0.65 0.425 5 4.5 6.4 0.5 8 0.95 Features 4 0.125 1.0 0.25 (0.95) 1 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8 0.1 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Conditions Ratings Unit VDSS VGSS –20 V ±10 V ID –1.4 A Drain Current (DC) Drain Current (pulse) IDP PW≤10µs, duty cycle≤1% Allowable Power Dissipation Mounted on a ceramic board (1000mm2×0.8mm) 1unit Total Dissipation PD PT 1.0 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Mounted on a ceramic board (1000mm2×0.8mm) –5.6 A 0.8 W Electrical Characteristics at Ta = 25˚C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Conditions V(BR)DSS IDSS ID=–1mA, VGS=0 IGSS VGS(off) VGS=±8V, VDS=0 Ratings min typ max –20 Unit V VDS=–20V, VGS=0 µA ±10 µA –1.4 V | yfs | VDS=–10V, ID=–1mA VDS=–10V, ID=–1.4A RDS(on)1 ID=–1.4A, VGS=–4V 235 315 mΩ RDS(on)2 ID=–0.7A, VGS=–2.5V 340 480 mΩ 180 pF 90 pF 43 pF Input Capacitance Ciss Output Capacitance Coss VDS=–10V, f=1MHz VDS=–10V, f=1MHz Reverse Transfer Capacitance Crss VDS=–10V, f=1MHz –0.4 –10 2.1 Marking : D1003 3 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30300TS (KOTO) TA-2500 No.6428–1/4 FTD1003 Continued from preceding page. Parameter Symbol Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Ratings Conditions min typ max Unit td(on) See Specified Test Circuit 10 ns tr See Specified Test Circuit 380 ns td(off) See Specified Test Circuit 280 ns tf See Specified Test Circuit 310 ns 9.5 nC 1 nC Qg Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD VDS=–10V, VGS=–10V, ID=–1.4A 1.5 IS=–1.4A, VGS=0 Switching Time Test Circuit nC –0.83 –1.2 V Electrical Connection VDD=--10V 0V --4V VIN D2 S2 S2 G2 ID=--1.4A RL=7.1Ω PW=10µs D.C.≤1% VIN D VOUT G P.G 50Ω S FTD1003 D1 S1 S1 G1 ID -- VDS --1.8 VDS=--10V --6.0V V --1.0 --0.8 --0.6 VGS=--1.5V --0.4 C 25° 75° --2.0 C Ta= -- Drain Current, ID – A --4 .0 --3 V .0V --2 .5 V --8.0V --1.2 --2.0V --10 .0 Drain Current, ID – A --2.5 --1.4 25° C --1.6 ID -- VGS --3.0 --1.5 --1.0 --0.5 --0.2 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 Drain-to-Source Voltage, VDS – V --0.5 --1.0 --1.5 --2.0 --2.5 Gate-to-Source Voltage, VGS – V IT00965 --3.0 IT00966 RDS(on) -- Ta 600 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) – mΩ 900 800 700 600 --1.4A 500 400 0 --0.9 RDS(on) -- VGS 1000 Static Drain-to-Source On-State Resistance, RDS(on) – mΩ --0.8 ID=--0.7A 300 200 100 0 0 --1 --2 --3 --4 --5 --6 --7 --8 Gate-to-Source Voltage, VGS – V --9 --10 IT00967 500 400 --0 I D= 300 . =--2 VGS 7A, .5V 0V =--4. , VGS -1.4A I D=- 200 100 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta – °C 120 140 160 IT00968 No.6428-2/4 FTD1003 yfs -- ID Forward Current, IF – A 5 3 2 25° C ° 25 C -- 1.0 = Ta 7 °C 75 5 3 2 0.1 --0.01 2 3 5 7 --0.1 5 7 --1.0 2 3 5 7 --10 IT00969 SW Time -- ID VDD=--10V VGS=--4V 7 5 --0.1 7 5 3 2 --0.01 7 5 3 2 --0.001 --0.2 --0.3 --0.4 td (off) 7 5 --1.0 --1.1 --1.2 IT00970 f=1MHz Ciss Coss 100 7 Crss 5 3 2 10 1.0 --0.1 2 3 5 7 2 --1.0 Drain Current, ID – A 0 3 --10 7 5 VDS=--10V ID=--1.4A Drain Current, ID – A --6 --5 --4 --3 --2 --0.1 7 5 3 4 5 6 7 8 Total Gate Charge, Qg – nC 9 10 PD -- Ta 1.0 0.8 To tal 0.6 Di 1u ss ip nit ati on 0.4 0.2 0 20 40 60 80 100 120 Ambient Temperature, Ta – °C 140 160 IT00975 --12 --14 --16 --18 --20 IT00972 100µs 1m s ms ID=--1.4A 10 0m s DC op era tio Operation inthis area is limited by RDS(on). n Ta=25°C Single pulse 1 unit a ceramic board (1000mm2×0.8mm) 5 7 --1.0 2 3 5 7 --10 2 Drain-to-Source Voltage, VDS – V IT00973 Mounted on a ceramic board (1000mm2×0.8mm) --10 10 --0.01 Mounted on 2 3 --0.1 Allowable Power Dissipation (FET1), PD – W 2 --8 ASO 3 2 3 2 1 --6 --1.0 7 5 --1 0 --4 IDP=--5.6A 3 2 --8 --7 --2 Drain-to-Source Voltage, VDS – V IT00971 VGS -- Qg --10 Allowable Power Dissipation, PD – W --0.9 Ciss, Coss, Crss -- VDS 2 2 0 --0.8 3 3 1.2 --0.7 5 td(on) 10 0 --0.6 7 tr 2 --9 --0.5 Diode Forward Voltage, VSD – V 1000 tf 3 --1.0 7 5 3 2 Ciss, Coss, Crss – pF Switching Time, SW Time – ns 3 Drain Current, ID – A 100 Gate-to-Source Voltage, VGS – V 2 VGS = 0 --25° C 7 IF -- VSD --10 7 5 3 2 VDS=--10V Ta= 75°C 25°C Forward Transfer Admittance, | yfs | – S 10 3 5 IT00974 PD(FET1) -- PD(FET2) 1.0 M ou nte 0.8 do na ce ram 0.6 ic bo ard (1 00 0m 0.4 m2 ×0 .8m m) 0.2 0 0 0.2 0.4 0.6 0.8 1.0 Allowable Power Dissipation (FET2), PD – W IT00976 No.6428-3/4 FTD1003 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice. PS No.6428-4/4