Ordering number : ENN7302 FTD7003 P-Channel Silicon MOSFET FTD7003 High-Speed Switching Applications • • • • Package Dimensions Low ON-resistance. 1.8V drive. Mounting height 1.1mm. Composite type, facilitating high-density mounting. unit : mm 2155A [FTD7003] 3.0 0.65 5 4.5 6.4 0.5 8 0.425 0.95 Features 4 1.0 0.25 (0.95) 1 1 : Drain1 2 : Source1 3 : Source1 0.125 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 0.1 Specifications SANYO : TSSOP8 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --12 Gate-to-Source Voltage VGSS ±8.5 V --6 A Drain Current (DC) ID Drain Current (Pulse) V IDP PD PW≤10µs, duty cycle≤1% --30 A Mounted on a ceramic board (1200mm2✕0.8mm) 1unit PW≤10s 1.4 W PT Tch Mounted on a ceramic board (1200mm2✕0.8mm) PW≤10s Channel Temperature Storage Temperature Tstg Allowable Power Dissipation Total Dissipation 1.6 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=--1mA, VGS=0 VDS=--12V, VGS=0 VGS=±6.8V, VDS=0 VDS=--6V, ID=--1mA VDS=--6V, ID=--6A Ratings min typ max --12 V --0.3 12.6 Marking : D7003 Unit --10 µA ±10 µA --1.0 V 18 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O1002 TS IM TA-3691 No.7302-1/4 FTD7003 Continued from preceding page. Ratings Parameter Symbol Conditions RDS(on) 1 RDS(on) 2 ID=--6A, VGS=--4.5V ID=--3A, VGS=--2.5V 20 25 mΩ Static Drain-to-Source On-State Resistance 29 40 mΩ ID=--1A, VGS=--1.8V VDS=--6V, f=1MHz 40 60 mΩ Input Capacitance RDS(on) 3 Ciss min typ Unit max 2100 pF Output Capacitance Coss VDS=--6V, f=1MHz 580 pF Reverse Transfer Capacitance Crss VDS=--6V, f=1MHz 500 pF Turn-ON Delay Time td(on) See specified Test Circuit 20 ns Rise Time tr td(off) See specified Test Circuit 380 ns See specified Test Circuit 220 ns tf See specified Test Circuit 230 ns Turn-OFF Delay Time Fall Time Total Gate Charge Qg VDS=--6V, VGS=--4.5V, ID=--6A 28 nC Gate-to-Source Charge Qgs VDS=--6V, VGS=--4.5V, ID=--6A 2.5 nC Gate-to-Drain “Miller” Charge Qgd VDS=--6V, VGS=--4.5V, ID=--6A 6.5 Diode Forward Voltage VSD IS=--6A, VGS=0 Switching Time Test Circuit nC --0.83 --1.5 V Electrical Connection VDD= --6V VIN 0V --4.5V D2 S2 S2 G2 D1 S1 S1 G1 ID= --6A RL=1Ω VIN D VOUT PW=10µs D.C.≤1% G S ID -- VDS V --2 VGS= --1.0V --1 --3 --2 --1 0 25°C --3 --4 --25 °C Drain Current, ID -- A --4 ID -- VGS VDS= --6V --5 .5 --4.5V --3.5V --1 . --5 --6 --1 --3.0 --2. 5V 8V V --6 Drain Current, ID -- A FTD7003 50Ω Ta= 75° C P.G 0 --0.1 0 --0.2 --0.3 --0.4 Drain-to-Source Voltage, VDS -- V --0.5 0 --0.4 --0.6 --0.8 --1.0 --1.2 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 80 --0.2 IT04621 --1.4 IT04622 RDS(on) -- Ta 70 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 70 60 --3A ID= --6A 50 40 --1A 30 20 10 0 0 --1 --2 --3 --4 --5 --6 Gate-to-Source Voltage, VGS -- V --7 --8 IT04623 60 50 V = --1.8 , V GS A 1 -I D= V = --2.5 3A, V GS I D= ---4.5V , V GS= I D= --6A 40 30 20 10 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT04624 No.7302-2/4 FTD7003 5 75° C 3 --0.01 7 5 3 2 2 1.0 7 --0.1 2 3 5 7 2 --1.0 3 5 Drain Current, ID -- A 7 --10 IT04625 --0.001 --0.2 td (off) 3 tf --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 IT04626 f=1MHz 5 3 Ciss, Coss, Crss -- pF 2 --0.4 Ciss, Coss, Crss -- VDS 7 VDD= --6V VGS= --4.5V 5 --0.3 Diode Forward Voltage, VSD -- V SW Time -- ID 7 Switching Time, SW Time -- ns --0.1 7 5 3 2 C 5°C --2 = Ta 7 75 °C 10 --1.0 7 5 3 2 Ta = C 25° VGS=0 --25 ° Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 3 2 IF -- VSD --10 7 5 3 2 VDS= --6V 25 °C yfs -- ID 5 tr 100 7 5 3 Ciss 2 1000 7 Coss 5 Crss td(on) 2 3 2 10 --0.1 2 3 5 7 2 --1.0 3 5 Drain Current, ID -- A 5 3 2 Drain Current, ID -- A --3.5 --3.0 --2.5 --2.0 --1.5 --10 7 5 3 2 10 15 20 25 Total Gate Charge, Qg -- nC 30 IT04629 PD -- Ta 2.0 --8 --10 --12 IT04628 ASO IDP= --30A <10µs 1m s 10 ms ID= --6A 10 0m s DC 10 s op era tio 3 2 --0.5 5 --6 --1.0 7 5 --0.1 7 5 0 --4 3 2 --1.0 0 --2 Drain-to-Source Voltage, VDS -- V VDS= --6V ID= --6A --4.0 Allowable Power Dissipation, PD -- W 0 --10 IT04627 VGS -- Qg --4.5 Gate-to-Source Voltage, VGS -- V 7 n Ta=25°C Single pulse Mounted on a ceramic board(1200mm2✕0.8mm) --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 IT04630 Drain-to-Source Voltage, VDS -- V Mounted on a ceramic board(1200mm2✕0.8mm)(PW≤10s) 1.6 1.5 1.4 To ta 1.0 1u nit ld iss ip ati on 0.5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT04631 No.7302-3/4 FTD7003 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2002. Specifications and information herein are subject to change without notice. PS No.7302-4/4