Ordering number:ENN6364 N-Channel Silicon MOSFET FW243 DC/DC Converter Applications Features Package Dimensions · Low ON resistance. · 4V drive. unit:mm 2129 [FW243] 5 4 1.27 0.595 Specifications 0.43 0.1 1.5 5.0 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 0.2 1.8max 1 6.0 4.4 0.3 8 Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit 30 V ±20 V 7 A ID Drain Current (pulse) IDP PW≤10µs, duty cycle≤1% 52 A Allowable Power Dissipation Mounted on a ceramic board (1000mm2×0.8mm) 1unit 1.7 W Total Dissipation PD PT 2.0 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Mounted on a ceramic board (1000mm2×0.8mm) Electrical Characteristics at Ta = 25˚C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Conditions V(BR)DSS IDSS ID=1mA, VGS=0 VDS=30V, VGS=0 IGSS VGS(off) | yfs | VGS=±16V, VDS=0 VDS=10V, ID=1mA RDS(on)1 VDS=10V, ID=7A ID=7A, VGS=10V RDS(on)2 ID=4A, VGS=4.5V Ratings min typ Unit max 30 V 1 µA ±10 µA 2.4 V 21 28 mΩ 29 41 mΩ 1.0 7.7 Marking : FW243 11 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30300TS (KOTO) TA-2079 No.6364-1/4 FW243 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss VDS=10V, f=1MHz 750 pF Output Capacitance Coss 300 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz VDS=10V, f=1MHz 120 pF Turn-ON Delay Time td(on) See specified Test Circuit 10 ns tr See specified Test Circuit 147 ns td(off) See specified Test Circuit 53 ns tf See specified Test Circuit 58 ns Qg VDS=10V, VGS=10V, ID=7A 14 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=7A 2.5 nC Gate-to-Drain "Miller" Charge Qgd VDS=10V, VGS=10V, ID=7A 1.3 nC Diode Forward Voltage VSD IS=7A, VGS=0 Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge 0.79 1.2 V Switching Time Test Circuit 10V 0V VIN VDD=15V ID=7A RL=2.1Ω VOUT VIN D PW=10µs D.C.≤1% G 10 V 3.0 5 4 VGS=2.5V 3 2 8 6 4 °C 2 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS – V 1.0 1.5 2.0 2.5 3.0 3.5 Gate-to-Source Voltage, VGS – V 4.0 IT00569 RDS(on) -- Ta 60 Static Drain-to-Source On-State Resistance, RDS(on) – mΩ 50 7A 45 ID=4A 35 30 25 20 15 10 5 0 0 0.5 IT00568 Ta=25°C 55 40 0 0 1.0 RDS(on) -- VGS 60 Static Drain-to-Source On-State Resistance, RDS(on) – mΩ 0.9 --2 5 1 0 0 25°C 5V Ta= 75° C 3. Drain Current, ID – A 6 ID -- VGS 12 VDS=10V 6.0V 4. 5V 8.0V 7 10.0V Drain Current, ID – A 8 S ID -- VDS 10 9 FW243 50Ω P.G 2 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS – V 18 20 IT00570 50 40 =4A , ID V 5 . =4 VGS 30 =7A V, I D .0 =10 VGS 20 10 0 --75 --50 --25 0 25 50 75 100 125 Ambient Temperature, Ta – ˚C 150 175 IT00571 No.6364-2/4 FW243 yfs -- ID 25°C 2 C 75° 1.0 7 5 3 2 0.1 0.1 2 3 5 7 2 1.0 3 5 Drain Current, ID – A 7 10 IT00572 Ciss, Coss, Crss – pF 1000 7 5 Ciss 3 2 Coss Crss 100 7 5 3 2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Diode Forward Voltage, VSD – V 1.2 IT00573 VGS -- Qg 10 VDS=10V ID=7A 9 8 7 6 5 4 3 2 0 0 5 10 15 20 30 25 0 100 7 5 3 2 3 Drain Current, ID – A 2 td(off) tf 3 2 tr td(on) 10 7 5 3 2 1.0 0.1 2.5 2 3 5 7 2 1.0 3 Drain Current, ID – A 2 3 5 7 10 IT00576 4 5 6 7 8 9 10 11 12 Total Gate Charge, Qg – nC VDD=15V VGS=10V 100 7 5 1 IT00574 SW Time -- ID 1000 7 5 Switching Time, SW Time – ns 0.01 7 5 3 2 0.001 0.2 1 Drain-to-Source Voltage, VDS – V Allowable Power Dissipation, PD – W 0.1 7 5 3 2 f=1MHz 3 2 10 1.0 7 5 3 2 Ciss, Coss, Crss -- VDS 10000 7 5 Ta= --25 °C 5°C -2 Ta= 3 10 7 5 3 2 Forward Current, IF – A 10 7 5 VGS=0 75 °C 25 °C 3 2 IF -- VSD 100 7 5 3 2 VDS=10V Gate-to-Source Voltage, VGS – V Forward Transfer Admittance, | yfs | – S 100 7 5 10 7 5 3 2 1.0 7 5 3 2 13 14 IT00575 ASO <10µs 1m 100µs s 10 m s IDP=52A ID=7A DC 10 0m s op er Operation in this area is limited by RDS(on). ati on 0.1 7 5 Ta=25°C 3 Single pulse 2 1 unit 2 0.01 Mounted on a ceramic board (1000mm ×0.8mm) 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS – V 5 7 100 IT00577 PD -- Ta Mounted on a ceramic board (1000mm2×0.8mm) 2.0 1.7 To 1.5 tal ss 1u 1.0 Di ip ati on nit 0.5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta – ˚C 140 160 IT00578 No.6364-3/4 FW243 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice. PS No.6364-4/4