Infrared Light Emitting Diodes LN66NC (LN66(NC)) GaAs Infrared Light Emitting Diode Unit : mm ø5.0±0.2 7.65±0.2 Not soldered Features High-power output, high-efficiency :PO = 8 mW (typ.) 1.0 For optical control systems Good radiant power output linearity with respect to input current Wide directivity : θ = 25 deg. (typ.) 13.5±1.0 11.5±1.0 3.6±0.3 1.0 Emitted light spectrum suited for silicon photodetectors 2-1.0±0.15 2-0.6±0.15 Dark blue resin package Parameter Symbol Ratings Unit PD 160 mW Forward current (DC) IF 100 mA Pulse forward current IFP* 1.5 A Power dissipation * Reverse voltage (DC) VR 3 V Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg – 40 to+100 ˚C ø6.0±0.2 Absolute Maximum Ratings (Ta = 25˚C) 0.6±0.15 2.54 2 1 1: Cathode 2: Anode f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter * Symbol * Conditions IF = 50mA min 5 typ max Unit Radiant power PO Peak emission wavelength λP IF = 50mA 8 mW 950 nm Spectral half band width ∆λ IF = 50mA 50 Forward voltage (DC) VF IF = 100mA 1.3 Reverse current (DC) IR VR = 3V Capacitance between pins Ct VR = 0V, f = 1MHz 35 pF Half-power angle θ The angle in which radiant intencity is 50% 25 deg. nm 1.6 V 10 µA PO Classifications Class R S PO (mW) 5 to 8 >7 Note) The part number in the parenthesis shows conventional part number. 1 Infrared Light Emitting Diodes LN66NC IF — Ta IFP — Duty cycle 120 tw = 10µs Ta = 25˚C 60 40 20 0 20 40 60 80 1 10 –1 10 –2 10 –3 10 –2 100 10 –1 Ambient temperature Ta (˚C ) 40 0 10 2 10 0 0.4 10 (2) 1.6 2.0 ∆PO — Ta IF = 50mA VF (V) (1) 1.2 10 IF = 100mA 10 2 0.8 Forward voltage VF (V) VF — Ta Forward voltage Relative radiant rower ∆PO 1 1.6 (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C 1 60 Duty cycle (%) ∆PO — IFP 10 3 80 20 1.2 50mA 10mA 0.8 0.4 Relative radiant power ∆PO 0 – 25 100 10 IF (mA) Pulse forward current Allowable forward current 80 Ta = 25˚C Forward current IFP (A) IF (mA) 10 2 100 IF — V F 120 1 10 –1 10 –1 1 10 10 2 10 3 0 – 40 10 4 Pulse forward current IFP (mA) λP — Ta 1000 0 40 120 10 –2 – 40 0 40 Spectral characteristics Directivity characteristics 0˚ IF = 50mA Ta = 25˚C Relative radiant intensity (%) 940 920 80 80 70 60 60 50 40 40 30 20 20 10˚ 20˚ 100 90 960 120 Ambient temperature Ta (˚C ) 100 980 80 Ambient temperature Ta (˚C ) IF = 50mA Peak emission wavelength λP (nm) 80 Relative radiant intensity (%) 10 –2 30˚ 40˚ 50˚ 60˚ 70˚ 80˚ 90˚ 900 – 40 0 40 80 Ambient temperature Ta (˚C ) 2 120 0 860 900 940 980 1020 1060 1100 Wavelength λ (nm) LN66NC Infrared Light Emitting Diodes Frequency characteristics 10 Ta = 25˚C Modulation output 1 10 –1 10 –2 10 –3 10 10 2 Frequency 10 3 10 4 f (kHz) 3 Caution for Safety Gallium arsenide material (GaAs) is used in this product. DANGER Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products. Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. 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