Huajing Discrete Devices Silicon N-Channel R ○ Power MOSFET CS2N60FB9D General Description： VDSS 600 V ID 1.5 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 24 W which reduce the conduction loss, improve switching RDS(ON)Typ 7.0 Ω CS2N60FB9D, the silicon N-channel Enhanced performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features： z Fast Switching z ESD Improved Capability z Low Gate Charge (Typical Data:7.5nC) z Low Reverse transfer capacitances(Typical:5.0pF) z 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS Rating Units Drain-to-Source Voltage 600 V Continuous Drain Current 1.5 A Continuous Drain Current TC = 100 °C 0.85 A Pulsed Drain Current 6.0 A ±30 V Single Pulse Avalanche Energy 80 mJ Avalanche Energy ,Repetitive 8 mJ Avalanche Current 1.3 A Peak Diode Recovery dv/dt 5.0 V/ns Power Dissipation 24 W Derating Factor above 25°C 0.19 W/℃ VESD(G-S) Gate source ESD (HBM-C= 100pF, R=1.5kΩ) 1500 V TJ，Tstg Operating Junction and Storage Temperature Range 150，–55 to 150 ℃ TL MaximumTemperature for Soldering 300 ℃ ID IDM a1 VGS a2 EAS EAR IAR Gate-to-Source Voltage a1 a1 dv/dt a3 PD W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 1 of 10 2 0 11 Huajing Discrete Devices R ○ CS2N60FB9D Electrical Characteristics（Tc= 25℃ unless otherwise specified）： OFF Characteristics Symbol Parameter Test Conditions VDSS Drain to Source Breakdown Voltage VGS =0V, I D =250µA ΔBVDSS/ΔTJ Bvdss Temperature Coefficient Drain to Source Leakage Current IDSS Rating Units Min. Typ. Max. 600 -- -- V ID=250uA,Reference25℃ -- 0.71 -- V/℃ VDS = 600V, V GS = 0V, Ta = 25℃ VDS =480V, V GS = 0V, -- -- 25 Ta = 125℃ -- -- 250 µA IGSS(F) Gate to Source Forward Leakage VGS =+30V -- -- 10 µA IGSS(R) Gate to Source Reverse Leakage VGS =-30V -- -- -10 µA ON Characteristics Symbol Parameter Test Conditions RDS(ON) Drain-to-Source On-Resistance VGS =10V,I D =0.75A VGS(TH) Gate Threshold Voltage VDS = VGS , I D = 250µA Rating Units Min. Typ. Max. -- 7.0 8.0 Ω 4.0 V 2.0 Pulse width tp≤380µs,δ≤2% Dynamic Characteristics Symbol Parameter Test Conditions gfs Forward Transconductance VDS =20V, I D =0.75A Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS = 0V V DS = 25V f = 1.0MHz Rating Min. Typ. Max. -- 1.0 -- -- 170 -- -- 27 -- -- 5 -- Units S pF Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain (“Miller”)Charge Test Conditions I D =1.5A VDD = 300V VGS = 10V RG = 4.7Ω I D =1.5A V DD =480V VGS = 10V Rating Min. Typ. Max. -- 8 -- -- 30 -- -- 22 -- -- 55 -- -- 7.5 -- 1.7 -- 4.0 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 2 o f 1 0 Units ns nC 2 0 11 Huajing Discrete Devices CS2N60FB9D R ○ Source-Drain Diode Characteristics Symbol Parameter IS Test Conditions Rating Units Min. Typ. Max. Continuous Source Current (Body Diode) -- -- 1.5 A ISM Maximum Pulsed Current (Body Diode) -- -- 6.0 A VSD Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time -- 250 ns Qrr Reverse Recovery Charge -- 550 nC IRRM Reverse Recovery Current -- 4.4 A I S =1.5A,V GS =0V I S =1.5A,Tj = 25°C dI F /dt=100A/us, VGS =0V Pulse width tp≤380µs,δ≤2% Symbol Parameter Typ. Rθ JC Junction-to-Case 5.21 ℃/W Rθ JA Junction-to-Ambient 100 ℃/W Units Gate-source Zener diode Symbol Parameter VGSO Gate-source breakdown voltage Test Conditions I GS = ±1mA(Open Drain) Rating Min. Typ. Max. Units 20 V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. a1 ：Repetitive rating; pulse width limited by maximum junction temperature ：L=10.0mH, ID=4A, Start TJ=25℃ a3 ：ISD =1.5A,di/dt ≤100A/us,VDD≤BVDS, Start TJ =25℃ a2 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 3 o f 1 0 2 0 11 Huajing Discrete Devices R ○ CS2N60FB9D Characteristics Curve： Pd , Power Dissipation ,Watts 10 Id,Drian current,Amps 10μs 1 10ms 100ms 0 .1 OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) 0 .0 1 DC TJ=150℃ TC=25℃ Single Pulse 0 .0 0 1 1 16 8 0 10 100 V d s ,D r a in - to - s o u r c e V o lta g e ,V o lts 1 .5 1.4 Id,Drain Source,Volts 1.6 1 0 .7 5 0 .5 50 75 100 Tc , Case Temperature , C 125 150 Figure 2 Maximun Power Dissipation vs Case Temperature 1 .7 5 1 .2 5 25 0 1000 Figure 1 Maximun Forward Bias Safe Operating Area Id , Drain Current ,Amps 24 0 .2 5 VGS=10V 1.2 VGS=9V 1 VGS=8V 0.8 0.6 VGS=6V 0.4 VGS=5V 0.2 0 0 0 25 50 75 100 T c , C a se T e m p e ra tu re ,C 125 150 0 5 Figure 3 Maximum Continuous Drain Current vs Case Temperature 10 15 20 Vds,Drain Source Voltage,Volts 25 30 Figure 4 Typical Output Characteristics 1 Thermal Impedance,Normanlized 50% 0.1 20% 10% 5% 0.01 2% 0.001 0.0001 0.00001 0.00001 PDM 1% t1 t2 NOTES： DUTY FACTOR ：D=t1/ t2 PEAK Tj=PDM*ZthJC*RthJC+TC Single pulse 0.0001 0.001 0.01 0.1 1 10 100 Rectangular Pulse Duration,Seconds Figure 5 Maximum Effective Thermal Impendance , Junction to Case W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 4 o f 1 0 2 0 11 Huajing Discrete Devices R ○ CS2N60FB9D 100 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION ⎡ 150 − TC ⎤ I = I 25 ⎢ ⎥ 125 ⎦ ⎣ Idm , Peak Current , Amps 10 1 VGS=10V 0 .1 1 .0 0 E -0 5 1 .0 0 E -0 4 1 .0 0 E -0 3 1 .0 0 E - 0 2 1 .0 0 E - 0 1 t , P u ls e W id th , S e c o n d s Rds(on), Drain to Source ON Resistance , Ohms 1.2 VDS=25V 0.9 0.6 0.3 1 .0 0 E + 0 1 PULSE DURATION = 10μs DUTY FACTOR = 0.5%MAX Tc =25 ℃ 11 ID=1.5A 10 ID0.75A 9 ID= 0.375A 8 7 6 0 0 2 4 6 8 Vgs,Gate to Source Voltage,Volts 10 Figure 7 Typical Transfer Characteristics 13 VGS=10V 12 11 10 9 0 0.3 0.6 0.9 Id,Drain Current,Amps 4 6 8 10 12 14 Vgs , Gate to Source Voltage，Volts Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage and Drain Current 2.5 Rds(on),Drain to Source ON Resistance,Normalized 14 Rds(on),Drain to source ON Resistance. Ohms 1 .0 0 E + 0 0 Figure 6 Maximun Peak Current Capability 12 1.5 Id Drain to Source Current,Amps FOR TEMPERATURES ABOVE 25℃ DERATE PEAK CURRENT AS FOLLOWS: 1.2 Figure 9 Typical Drain to Source ON Resistance vs Drain Current 1.5 2 VGS=10V ID=250μA 1.5 1 0.5 0 -100 -50 0 50 100 Tj,Junction Temperature,C 150 Figure 10 Typical Drian to Source on Resistance vs Junction Temperature W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 5 o f 1 0 2 0 11 200 Huajing Discrete Devices 1.15 VDS=VGS ID=250μA 1.1 Breakdown Voltage,Normalized Vgs(th),Threshold Voltage 1.2 1 0.9 0.8 0.7 0.6 -100 -50 0 50 100 150 1.1 ID=250μA 1.05 1.0 0.95 0.9 0.85 -100 200 -50 0 50 100 Tj,Junction Temperature,C Tj,Junction Temperature,C 250 200 14 Vgs,gate to Source Voltage , Volts VGS=0V , f=1MHz Ciss=Cgs+Cgd Coss=Cds+Cgd Crss=Cgd 200 Capacitance,Pf 150 Figure 12 Typical Breakdown Voltage vs Junction Temperature Figure 11 Typical Theshold Voltage vs Junction Temperature 150 100 Ciss 50 12 10 Coss Crss 0 0 VDS=480V ID=1.5A 8 6 4 2 0 10 20 30 40 Vds,Drain to source Voltage,Volts 2 0 50 Figure 13 Typical Capacitance vs Drain to Source Voltage 4 6 8 10 Qg,Total gate charge, nc 12 14 Figure 14 Typical Gate Charge vs Gate to Source Voltage 1.2 10 1 0.8 0.6 +150℃ 0.4 +25℃ 0.2 -55℃ 0 0.2 0.4 0.6 0.8 1 1.2 Vsd,Source-Drain to source voltages,volts Figure 15 Typical Body Diode Transfer Characteristics Id , Drain Current , Amps Isd,Reverse Drain Current,Amps CS2N60FB9D R ○ STARTING Tj = 25℃ STARTING Tj = 150℃ 1 0.1 If R=0: tAV=(L* IAS) / (1.38VDSS-VDD) If R≠0: tAV=(L/R) In[IAS*R/ (1.38VDSS-VDD)+1] R equals total Series resistance of Drain circuit 0.01 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 tav , Time in Avalanche , Seconds Figure 16 Unclamped Inductive Switching Capability W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 6 o f 1 0 2 0 11 Huajing Discrete Devices R ○ CS2N60FB9D TestCircuitandWaveform W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 7 o f 1 0 2 0 11 Huajing Discrete Devices R ○ CS2N60FB9D W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 8 o f 1 0 2 0 11 Huajing Discrete Devices R ○ CS2N60FB9D Package Information： 项 目 规范(mm) MIN MAX A 9.70 10.30 B 15.50 16.10 C 4.40 4.80 D 2.50 2.90 E 0.70 0.90 F 0.40 0.60 G 1.12 1.42 H 3.40 3.80 L 12.6 13.6 N 2.34 2.74 3.00 3.30 TO-220F Package W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 9 o f 1 0 2 0 11 Huajing Discrete Devices R ○ CS2N60FB9D The name and content of poisonous and harmful material in products Hazardous Substance Part’s Name Pb Hg Cd Cr(VI) PBB PBDE ≤0.1% ≤0.1% ≤0.01% ≤0.1% ≤0.1% ≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ Molding Compound ○ ○ ○ ○ ○ ○ Chip ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ Limit ○：means the hazardous material is under the criterion of SJ/T11363-2006. Note ×：means the hazardous material exceeds the criterion of SJ/T11363-2006. Warnings 1. 2. 3. 4. Exceeding the maximun ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximun ratings of the device. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. VDMOSFETs is the device which is sensitive to the static electricity, it is necessory to protect the device from being damaged by the static electricity when using it. This publication is made by Huajing Microelectronics and subject to regular change without notice. Marketing Part： http://www.wimtel.com Tel: 0755-82389111 Fax: 0755-33065120 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P a g e 1 0 o f 1 0 2 0 11