2N7002 N-Channel Enhancement Mode MOSFET Feature 60V/0.5A, RDS(ON) = 7500mΩ(MAX) @VGS = 10V. Id = 0.5A RDS(ON) = 7500mΩ(MAX) @VGS = 4.5V. Id = 0.2A Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SOT-23 for Surface Mount Package. SOT-23 Applications ● Power Management in Desktop Computer or DC/DC Converters . Absolute Maximum Ratings TA=25℃ Unless Otherwise noted Symbol Limit Units Drain-Source Voltage Parameter VDS 60 V Gate-Source Voltage VGS ±20 V ID 0.5 A Drain Current-Continuous Electrical Characteristics Parameter TA=25℃ Unless Otherwise noted Symbol Test Conditions Min Typ. Max Units BVDSS VGS=0V, ID=10µA 60 - - V Zero-Gate Voltage Drain Current IDSS VDS=60V, VGS=0V - - 1 µA Gate Body Leakage Current, Forward IGSSF VGS=20V, VDS=0V - - 100 nA Gate Body Leakage Current, Reverse IGSSR VGS=-20V, VDS=0V - - -100 nA VGS(th) VGS= VDS, ID=250µA 1 - 2.5 V VGS =10V, ID =0.5A - 4500 7500 mΩ VGS =4.5V, ID =0.2A - 5250 7500 mΩ 2.5 V Off Characteristics Drain to Source Breakdown Voltage On Characteristics Gate Threshold Voltage Static Drain-source RDS(ON) On-Resistance Drain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode Forward Voltage VSD VGS =0V, IS=0.2A １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ 2N7002 N-Channel Enhancement Mode MOSFET Typical Characteristics 0.6 0.8 VGS=4，4.5，5，6，7，8～10V 0.5 0.6 ID,Drain Current(Amps) ID,Drain Current(Amps) 0.7 VGS=3V 0.5 0.4 0.3 0.2 0.4 0.3 Tj＝125℃ Tj＝25℃ 0.2 0.1 0.1 VGS=2.0V 0 0 1 2 3 4 0 0 5 1 Figure 1．Output Characteristics 3 4 5 Figure 2．Transfer Characteristics 72 1.7 ID=250uA 71 Vth,Normalized Gate-Source Threshold Voltage(V) BVDSS,Normalized Drain-Source Breakdown Voltage(Volts) 2 VGS,Gate-to-Source Voltage(Volts) VDS,Drain-to-Source Voltage(Volts) 70 69 68 67 66 65 64 63 62 ID=250uA 1.6 1.5 1.4 1.3 1.2 1.1 0 50 100 150 200 Tj.Junction Temperature(℃) Figure 3．Breakdown Voltage Variation with Temperature 0 50 100 150 200 Tj.Junction Temperature(℃) Figure 4．Gate Threshold Variation with Temperature ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ 2N7002 N-Channel Enhancement Mode MOSFET 9 10 8 9 7 8 6 RDS(on)-On Resistance(Ω) RDS(on),Normalized On-Resistance(Ω) Typical Characteristics 10V/0.5A 5 4 4.5V/0.2A 3 2 1 7 6 VGS=4.5V 5 4 VGS=10V 3 2 1 0 0 0 50 100 150 200 0 0.2 Tj.Junction Temperature(℃) 0.4 0.6 0.8 1 ID-Drain Current(A) Figure 5．On-Resistance Variation with Temperature Figure 6．On-Resistance vs. Drain Current 12 10 IS-Source Current(A) RDS(on)-On Resistance(Ω) 10 8 6 ID=0.5A 4 Tj＝150℃ 1 Tj＝25℃ ID=0.2A 2 0 0.1 0 2 4 6 8 10 VGS,Gate-to-Source Voltage(Volts) Figure 7．On-Resistance vs. Gate-to-Source Voltage 0 0.5 1 1.5 2 2.5 VSD-Source-to-Drain Voltage(V) Figure 8．Source-Drain Diode Forward Voltage ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５