NANKER GK8205 Dual N-Channel Enhancement Mode MOSFET Feature 16V/6A, RDS(ON) = 32mΩ(MAX) @VGS = 4.5V. RDS(ON) = 45mΩ(MAX) @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. TSSOP-8 for Surface Mount Package. TSSOP-8 Applications ● LI-ION Protection Circuit Absolute Maximum Ratings TA=25℃ Unless Otherwise noted Symbol Limit Units Drain-Source Voltage Parameter VDS 16 V Gate-Source Voltage VGS ±10 V ID 6 A Drain Current-Continuous Electrical Characteristics Parameter TA=25℃ Unless Otherwise noted Symbol Test Conditions Min Typ. Max Units Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 16 - - V Zero-Gate Voltage Drain Current IDSS VDS=12V, VGS=0V - - 1 µA Gate Body Leakage Current, Forward IGSSF VGS=10V, VDS=0V - - 100 nA Gate Body Leakage Current, Reverse IGSSR VGS=-10V, VDS=0V - - -100 nA VGS(th) VGS= VDS, ID=250µA 0.4 - 1.3 V VGS =4.5V, ID =6.0A - 24 32 mΩ VGS =2.5V, ID =5.2A - 35 45 mΩ 1.2 V Off Characteristics On Characteristics Gate Threshold Voltage Static Drain-source RDS(ON) On-Resistance Drain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode Forward Voltage VSD VGS =0V, IS=1.5A Nanker Group Headquarters: Tel: 0756-8128088 E-mail: [email protected] August 19, 2006 Shenzhen Sales Office: Fax: 0756-8889513 Tel: 0755-86022782, 86022783, 86022910 Fax: 0755-86022774 Website: www.nanker.com Page 1 of 3 www.nanker.com NANKER GK8205 Typical Characteristics 20 14 VGS=2.5，3.5，4.5V 16 12 VGS=2.0V ID,Drain Current(A) ID,Drain Current(A) 18 10 8 6 4 14 12 10 8 Tj＝125℃ 6 4 2 VGS=1.5V 0 0 0 1 2 3 VDS,Drain-Source Voltage(V) 0 0.5 1 2 2.5 Figure 2．Transfer Characteristics 21.5 0.8 Vth,Normalized Gate-Source Threshold Voltage(V) ID=250uA 21 20.5 20 19.5 19 ID=250uA 0.7 0.6 0.5 0.4 0.3 0.2 0 50 100 150 0 50 100 150 Tj.Junction Temperature(℃) Tj,Junction Temperature(℃) Figure 3．Breakdown Voltage Variation with Temperature August 19, 2006 1.5 VGS,Gate-to-Source Voltage(V) Figure 1．Output Characteristics BVDSS,Normalized Drain-Source Breakdown Voltage(V) Tj＝25℃ 2 Page 2 of 3 Figure 4．Gate Threshold Variation with Temperature www.nanker.com NANKER GK8205 Typical Characteristics 0.031 4.5V/6A 0.029 VGS=2.5V 0.029 0.028 RDS(on)-On Resistance(Ω) RDS(on),Normalized On-Resistance(Ω) 0.03 0.027 0.026 0.025 0.024 0.023 0.022 0.027 0.025 VGS=4.5V 0.023 0.021 0.019 0.017 0.021 0.02 0.015 0 50 100 150 0 5 Tj,Junction Temperature(℃) 10 15 20 ID-Drain Current(A) Figure 5．On-Resistance Variation with Temperature Figure 6．On-Resistance vs. Drain Current 0.12 ID=6A 100 0.08 IS-Source Current(A) RDS(on)-On-Resistance(Ω) 0.1 0.06 0.04 Tj＝150℃ Tj＝25℃ 10 0.02 1 0 1 2 3 4 5 6 Figure 7．On-Resistance vs. Gate-to-Source Voltage August 19, 2006 0.4 0.9 1.4 1.9 VSD-Source-to-Drain Voltage(V) VGS-Gate-to-Source Voltage(V) Page 3 of 3 Figure 8．Source-Drain Diode Forward Voltage www.nanker.com