NANKER NK2302A N-Channel Enhancement Mode MOSFET Feature 16V/3.6A, RDS(ON) = 80mΩ(MAX) @VGS = 4.5V. RDS(ON) = 90mΩ(MAX) @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SC-59 for Surface Mount Package. SC-59 Applications ● Power Management Portable Equipment and Battery Powered Systems. Absolute Maximum Ratings TA=25℃ Unless Otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 16 V Gate-Source Voltage VGS ±8 V ID 3.6 A Drain Current-Continuous Electrical Characteristics Parameter TA=25℃ Unless Otherwise noted Symbol Test Conditions Min Typ. Max Units BVDSS VGS=0V, ID=250µA 16 - - V Zero-Gate Voltage Drain Current IDSS VDS=12V, VGS=0V - - 1 µA Gate Body Leakage Current, Forward IGSSF VGS=8V, VDS=0V - - 100 nA Gate Body Leakage Current, Reverse IGSSR VGS=-8V, VDS=0V - - -100 nA VGS(th) VGS= VDS, ID=250µA 0.4 - 1.3 V VGS =4.5V, ID =3.6A - 70 80 mΩ VGS =2.5V, ID =3.1A - 75 90 mΩ 1.2 V Off Characteristics Drain to Source Breakdown Voltage On Characteristics Gate Threshold Voltage Static Drain-source RDS(ON) On-Resistance Drain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode Forward Voltage VSD VGS =0V, IS=0.94A Nanker Group Headquarters: Tel: 0756-8128088 E-mail: [email protected] July 20, 2006 Shenzhen Sales Office: Fax: 0756-8889513 Tel: 0755-86022782, 86022783, 86022910 Fax: 0755-86022774 Website: www.nanker.com Page 1 of 1 www.nanker.com