NANKER NK9926D Dual N-Channel Enhancement Mode MOSFET Feature 16V/6A, RDS(ON) = 32mΩ(MAX) @VGS = 4.5V. RDS(ON) = 45mΩ(MAX) @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SOP-8 for Surface Mount Package. SOP-8 Applications ● LI-ION Protection Circuit Absolute Maximum Ratings TA=25℃ Unless Otherwise noted Symbol Limit Units Drain-Source Voltage Parameter VDS 16 V Gate-Source Voltage VGS ±12 V ID 6 A Drain Current-Continuous Electrical Characteristics Parameter TA=25℃ Unless Otherwise noted Symbol Test Conditions Min Typ. Max Units BVDSS VGS=0V, ID=250µA 16 - - V Zero-Gate Voltage Drain Current IDSS VDS=6V, VGS=0V - - 1 µA Gate Body Leakage Current, Forward IGSSF VGS=12V, VDS=0V - - 100 nA Gate Body Leakage Current, Reverse IGSSR VGS=-12V, VDS=0V - - -100 nA VGS(th) VGS= VDS, ID=250µA 0.4 - 1.3 V VGS =4.5V, ID =6.0A - 26 32 mΩ VGS =2.5V, ID =5.2A - 35 45 mΩ 1.2 V Off Characteristics Drain to Source Breakdown Voltage On Characteristics Gate Threshold Voltage Static Drain-source RDS(ON) On-Resistance Drain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode Forward Voltage VSD VGS =0V, IS=1.5A Nanker Group Headquarters: Tel: 0756-8128088 E-mail: [email protected] September 6, 2006 Shenzhen Sales Office: Fax: 0756-8889513 Tel: 0755-86022782, 86022783, 86022910 Fax: 0755-86022774 Website: www.nanker.com Page 1 of 3 www.nanker.com NANKER NK9926D Typical Characteristics 35 20 18 30 ID,Drain Current(Amps) ID,Drain Current(Amps) VGS=2.5，3.5，4.5V 16 14 12 10 8 VGS=2.0V 6 25 20 Tj＝125℃ 15 10 Tj＝25℃ 4 5 2 VGS=1.5V 0 0 0.5 1 1.5 2 0 2.5 3 0 VDS,Drain-to-Source Voltage(Volts) 0.5 1 1.5 Figure 1．Output Characteristics 2.5 3 Figure 2．Transfer Characteristics 21.5 0.8 Vth,Normalized Gate-Source Threshold Voltage(V) ID=250uA BVDSS,Normalized Drain-Source Breakdown Voltage(V) 2 VGS,Gate-to-Source Voltage(Volts) 21 20.5 20 19.5 19 ID=250uA 0.7 0.6 0.5 0.4 0.3 0.2 0 50 100 150 50 100 150 Tj.Junction Temperature(℃) Tj,Junction Temperature(℃) Figure 3．Breakdown Voltage Variation with Temperature September 6, 2006 0 Page 2 of 3 Figure 4．Gate Threshold Variation with Temperature www.nanker.com NANKER NK9926D Typical Characteristics 0.06 0.055 4.5V/6A 0.035 RDS(on)-On Resistance(Ω) RDS(on),Normalized On-Resistance(Ω) 0.04 0.03 0.025 0.02 VGS=2V 0.05 0.045 0.04 0.035 VGS=2.5V 0.03 VGS=3V 0.025 VGS=4、5、6V 0.02 0.015 0.015 0.01 0 50 100 150 1 6 Tj.Junction Temperature(℃) 11 16 ID-Drain Current(A) Figure 5．On-Resistance Variation with Temperature Figure 6．On-Resistance vs. Drain Current 100 0.09 0.07 IS-Source Current(A) RDS(on)-On Resistance(Ω) 0.08 0.06 0.05 0.04 ID=6A 0.03 0.02 10 Tj＝150℃ Tj＝25℃ 1 ID=5.2A 0.01 0 0.1 0 2 4 6 8 10 Figure 7．On-Resistance vs. Gate-to-Source Voltage September 6, 2006 0.1 0.3 0.5 0.7 0.9 1.1 1.3 VSD-Source-to-Drain Voltage(V) VGS,Gate-to-Source Voltage(Volts) Page 3 of 3 Figure 8．Source-Drain Diode Forward Voltage www.nanker.com