CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO.,LTD SOT-23 Plastic-Encapsulate Transistors www.harom.cn tel:86-769-87058050 SOT-23 MMBT3904 TRANSISTOR (NPN) FEATURES z As complementary type, the PNP transistor MMBT3906 is Recommended z Epitaxial planar die construction 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO Parameter Collector-Base Voltage Value 60 Units V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.2 A PC Collector Power Dissipation 0.2 W TJ Tstg Junction Temperature Storage Temperature 150 -55-150 ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 6 V Collector cut-off current ICBO Collector cut-off current ICEO VCE=30V, VBE(off)=3V 50 nA Emitter cut-off current IEBO VEB= 5V , 0.1 μA hFE(1) VCE=1V,IC=10mA 100 hFE(2) VCE=1V,IC=50mA 60 30 DC current gain VCB= 60 V , IE=0 0.1 IC=0 hFE(3) VCE=1V,IC=100mA VCE(sat) IC=50mA,IB=5mA VBE(sat) IC=50mA,IB=5mA Transition frequency fT VCE=20V,IC=10mA,f=100MHz Delay time td Rise time Storage time Fall time tr tS tf VCC=3V,VBE=-0.5V,IC=10mA , IB1=-IB2= 1mA 400 0.3 0.95 250 Range V V MHz VCC=3V,IC=10mA , IB1=-IB2= 1mA CLASSIFICATION OF hFE1 Rank μA O Y G 100-200 200-300 300-400 35 nS 35 200 50 nS nS nS Typical Characteristics MMBT3904