3DD13005(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 1 Features 2 3 power switching applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 4 A PC Collector Power Dissipation 2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 1mA, IE=0 700 V Collector-emitter V(BR)CEO IC= 10mA, IB=0 400 V V(BR)EBO IE= 1mA, IC=0 9 V breakdown Emitter-base breakdown voltage Collector cut-off current ICBO VCB= 700V, IE=0 1 mA Collector cut-off current ICEO VCE= 400V, IB=0 0.1 mA Emitter cut-off current IEBO VEB=7V, IC=0 0.05 mA hFE1 VCE= 5V, IC= 1A 10 hFE2 VCE= 5V, IC= 10mA 5 hFE3 VCE= 5V, IC= 2A 8 VCE (sat)1 IC=1A, IB=0.2A 0.3 V VCE (sat)2 IC=4A, IB=1A 0.8 V VBE (sat) IC=2A, IB=0.5A 1.6 V DC current gain 60 40 Collector-emitter saturation voltage Base-emitter saturation voltage Transition Frequency fT VCE=10V, IC=500mA, f =1MHz Fall time tf IB1=-IB2=0.4A, IC=2A, VCC=120V Storage time ts IC=0.25A 5 MHz 1.8 0.6 µs 6.6 µs CLASSIFICATION OF hFE1 Rank Range 10-15 15-20 20-25 25-30 30-35 35-40 40-45 45-50 50-55 55-60 3DD13005(NPN) TO-220 Transistor Typical Characteristics