3DD13003(NPN) TO-126 Transistor TO-126 1.BASE 2.COLLECTOR 2.500 1.100 2.900 1.500 7.400 7.800 3.EMITTER 3.900 4.100 3.000 3 3.200 2 10.60 0 11.00 0 1 0.000 0.300 Features 2.100 2.300 power switching applications 1.170 1.370 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value 15.30 0 15.70 0 Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 1.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 0.660 0.860 0.450 0.600 2.290 TYP 4.480 4.680 Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC =5mA, IE=0 700 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE=2mA, IC=0 9 V Collector cut-off current ICBO VCB=700V,IE=0 1 mA Collector cut-off current ICEO VCE=400V,IB=0 0.5 mA Emitter cut-off current IEBO VEB=9V, IC=0 1 mA hFE1 VCE=5V, IC= 0.5 A 8 40 hFE2 VCE=5V, IC= 1.5A 5 Collector-emitter saturation voltage VCE(sat) IC=1A,IB=0.25A 0.6 V Base-emitter saturation voltage VBE(sat) IC=1A,IB=0.25A 1.2 V Transition frequency fT VCE=10V,Ic=100mA, f =1MHz Fall time tf IC=1A, IB1=-IB2=0.2A, VCC=100V Storage time ts IC=0.25A DC current gain CLASSIFICATION OF 5 MHz 1.8 0.5 µs 6.6 µs hFE1 Rank Range 8-10 10-15 15-20 20-25 25-30 30-35 35-40 3DD13003(NPN) TO-126 Transistor Typical Characteristics