SES Series Ultra Small ESD Protector SES5VD923-2B ROHS Description The SES5VD923-2B ESD protector is designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDA’s. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable 9C electrical characteristics for board level protection, such as fast response time, lower operating voltage, lower clamping voltage and no device degradation when compared to MLVs. The SES5VD923-2B protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. The SES5VD923-2B is available in a SOD-923 package with working voltages of 5 volt. It gives designer the flexibility to protect one bidirectional line in applications where arrays are not practical. Additionally, it may be “sprinkled” around the board in applications where board space is at a premium. It may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (± 15kV air, ±8kV contact discharge) Feature 100 Watts peak pulse power (tp = 8/20μs) Transient protection for data lines to IEC 61000-4-2 (ESD) ±25kV (air), ±10kV (contact) IEC 61000-4-4 (EFT) 40A (5/50ns) IEC 61000-4-5 (Lightning) 24A (8/20μs) Small package for use in portable electronics Suitable replacement for MLV’s in ESD protection applications Protect one I/O or power line Low clamping voltage Stand off voltages: 5V Low leakage current Solid-state silicon-avalanche technology Small Body Outline Dimensions: 1.0mm×0.6mm×0.5mm Equivlent to 0402 package Applications Cell Phone Handsets and Accessories Personal Digital Assistants (PDA’s) Notebooks, Desktops, and Servers Portable Instrumentation Cordless Phones Digital Cameras Peripherals MP3 Players Ultra Small ESD Protector 1 www.x-jiazhi.com SES Series Ultra Small ESD Protector SES5VD923-2B ROHS Electrical characteristics @25℃(unless otherwise specified) Parameter Symbol Conditions Working Voltage VRWM Breakdown voltage VBR It =1mA Reverse Leakage Current IR VRWM =5V T=25℃ Clamping Voltage VC Junction Capacitance Cj IPP=5A Min. Typ. 5.6 6.7 tP = 8/20μS VR=0V f = 1MHz 8 Max. Units 5 V 7.8 V 1 μA 9.8 V 15 pF Absolute maximum rating @25℃ Rating Symbol Value Units Peak Pulse Power ( tP = 8/20μS ) Ppk 100 W Maximum Peak Pulse Current ( tP = 8/20μS ) Ipp 16 A Lead Soldering Temperature TL 260 (10 sec) ℃ Operating Temperature TJ -55 to +125 ℃ TSTG -55 to +150 ℃ Storage Temperature Typical Characteristics Ultra Small ESD Protector 2 www.x-jiazhi.com SES Series Ultra Small ESD Protector SES5VD923-2B ROHS Product dimension and Pad size VC-Clamping Voltage- Volts 14 12 10 8 6 2 0 Ultra Small ESD Protector Waveform Parameters: tr=8us td=20us 4 5 10 IPP- Peak pulse Current -Amps 3 15 20 www.x-jiazhi.com SES Series Ultra Small ESD Protector SES5VD923-2B ROHS How To Order Device Package Carrier Marking Code Standard Quantity SES5VD923-2B SOD Tape 9C 8000pcs Revision History Revision Date Changes 1.0 2008-7-3 - 1.1 2008-9-3 Change the parameter of Cj Website:http://www.x-jiazhi.com For additional information, please contact your local Sales Representative. ©Copyright 2005, Wealth Crown . ® is a registered trademark of Wealth Crown All rights reserved. TVS for Surge Protection 4 www.x-jiazhi.com