ETC SWG3404

SWG3404
30V Single N-Channel Enhancement-Mode MOSFET
General Description
Product Summary
● Low gate charge.
● BVDSS
30V
● Use as a load switch.
● RDS(on) @VGS = 10V
< 35mΩ
● Use in PWM applications
● RDS(on) @VGS = 4.5V
< 45mΩ
SOT-23-3L
D
G
S
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
5
A
3
A
20
A
1.4
W
1.0
W
TJ, TSTG
-55 ~ +150
ºC
Symbol
Maximum
Units
100
ºC/W
130
ºC/W
90
ºC/W
Drain Current (TA=25ºC)
ID
Drain Current (TA=75ºC)
Pulsed Drain Current a
IDM
b
Power Dissipation (TA=25ºC)
PD
b
Power Dissipation (TA=75ºC)
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Junction-to-Ambient a (t ≤ 10s)
Junction-to-Ambient
a,d
RθJA
(Steady-State)
Junction-to-Lead (Steady-State)
SWDS-SWG3404-Rev01
RθJL
1/2
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SWG3404
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V , ID = 250uA
30
V
IDSS
Zero Gate Voltage Drain Current
VDS = 30V , VGS = 0V
1
uA
IGSS
Gate-Body Leakage Current
VGS = ±20V, VDS = 0V
±100
nA
3
V
On Characteristics
VGS(th)
RDS(ON))
gFS
Gate Threshold Voltage
VDS = VGS , ID = 250uA
1
Drain-Source
On-State Resistance
VGS = 10V , ID = 5.0A
35
mΩ
VGS = 4.5V , ID = 4.0A
45
mΩ
Forward Transconductance
VDS = 4.5V , ID = 4.0A
20
S
Drain-Source Diode Characteristics
VSD
IS
Diode Forward Voltage
VGS = 0V , IS = 1.0A
Maximum Body-Diode Continuous Current
1.2
V
2.0
A
Dynamic Characteristics
Ciss
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg
Total Gate Charge
VDS = 15V , VGS = 0V
f = 1.0MHz
VDS = 15V , ID = 5A
VGS = 6V
450
pF
50
pF
40
pF
6
nC
1.1
nC
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
1.5
nC
tD(ON)
Turn-On Delay Time
5.2
ns
tr
Turn-On Rise Time
3.2
ns
tD(OFF)
Turn-Off Delay Time
16
ns
4.5
ns
tf
a.
Input Capacitance
VDD = 15V , ID = 1A
VGS = 6 V
RGEN = 6 ohm
Turn-Off Fall Time
Repetitive rating, Pulse width limited by junction temperature TJ(MAX)=150 ºC. Ratings are based on low frequency and duty cycles to keep initial
TJ=25 ºC
b.
The power dissipation PD is based on TJ(MAX)=150 ºC , using≤10s junction-to-ambient thermal resistance.
c.
The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA = 25°C. The value in
any given application depends on the user’s specific board design.
d.
The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
SWDS-SWG3404-Rev01
2/2
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