MUR3020, MUR3030 Ultra Fast Recovery Diodes Dimensions TO-247AC A C(TAB) C A C A=Anode, C=Cathode, TAB=Cathode VRSM V 200 300 MUR3020 MUR3030 Symbol VRRM V 200 300 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.819 0.800 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F 4.32 5.4 5.49 6.2 0.170 0.212 0.216 0.244 G H 1.65 - 2.13 4.5 0.065 - 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.016 0.209 0.031 N 1.5 2.49 0.087 0.102 Maximum Ratings Unit IFRMS IFAVM TC=145oC; rectangular, d=0.5 70 30 A IFSM TVJ=45oC; tp=10ms (50Hz), sine 300 A 1.2 mJ 0.3 A EAS IAR o TVJ=25 C; non-repetitive; IAS=3A; L=180uH VA=1.5.VR typ.; f=10kHz; repetitive -55...+175 175 -55...+150 TVJ TVJM Tstg Ptot TC=25oC Md mounting torque Weight typical o C 165 W 0.8...1.2 Nm 6 g MUR3020, MUR3030 Ultra Fast Recovery Diodes Symbol Test Conditions Characteristic Values typ. max. Unit IR TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM 250 1 uA mA VF IF=30A; TVJ=150oC TVJ=25oC 0.91 1.25 V RthJC RthCH trr IRM 0.9 0.25 IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC 30 o VR=100V; IF=50A; -diF/dt=100A/us; TVJ=100 C K/W ns 7 A FEATURES APPLICATIONS ADVANTAGES * International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch MUR3020, MUR3030 Ultra Fast Recovery Diodes 60 800 30 TVJ = 100°C nC A 40 VR = 150V 25 600 IF TVJ = 100°C A VR = 150V IRM Qr 20 IF = 60A TVJ=150°C IF = 60A IF = 30A IF = 30A 400 TVJ=100°C IF = 15A 15 IF = 15A TVJ= 25°C 20 10 200 5 0 0.0 0.5 1.0 VF V 0 100 1.5 Fig. 1 Forward current IF versus VF 0 A/us 1000 -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt 1.4 90 1.2 trr 200 600 A/us 800 1000 -diF/dt 400 Fig. 3 Peak reverse current IRM versus -diF/dt 14 TVJ = 100°C ns 0 TVJ = 100°C V VR = 150V 80 IF = 30A VFR Kf 0.8 70 IRM IF = 15A Qr 0.6 0.6 IF = 30A 60 10 0.4 50 0.4 0.2 40 0 40 80 120 °C 160 8 0 TVJ 200 400 600 800 1000 A/us 0 200 400 -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt 1 0.0 600 A/us 800 1000 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 0.1 1 2 3 ZthJC 0.01 0.001 0.0001 0.00001 0.0001 0.001 tfr VFR IF = 60A 0.8 us 1.0 tfr 12 1.0 1.2 0.01 s 0.1 t Fig. 7 Transient thermal resistance junction to case 1 Rthi (K/W) ti (s) 0.465 0.179 0.256 0.005 0.0003 0.04