S1PHB55 Single Phase Half Controlled Bridge With Free Wheeling Diode Dimensions in mm (1mm=0.0394") Type S1PHB55-08 S1PHB55-12 S1PHB55-14 S1PHB55-16 S1PHB55-18 Symbol VRSM VDSM V 900 1300 1500 1700 1900 Test Conditions IdAV TK=85oC, module IdAVM module IFRMS, ITRMS per leg VRRM VDRM V 800 1200 1400 1600 1800 Maximum Ratings Unit 55 55 41 A ITSM, IFSM TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 550 600 500 550 A 2 TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 1520 1520 1250 1250 A2s TVJ=125oC f=50Hz, tp=200us VD=2/3VDRM IG=0.3A diG/dt=0.3A/us repetitive, IT=50A 150 non repetitive, IT=1/2IdAV 500 It (di/dt)cr A/us TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) 1000 V/us 10 5 W PGAVM 0.5 W VRGM 10 V TVJ TVJM Tstg -40...+125 125 -40...+125 (dv/dt)cr PGM VISOL Md Weight TVJ=TVJM IT=ITAVM 50/60Hz, RMS _ IISOL<1mA tp=30us tp=500us t=1min t=1s Mounting torque (M5) (10-32 UNF) o C 2500 3000 V~ _ 5+15% _ 44+15% Nm lb.in. 110 g S1PHB55 Single Phase Half Controlled Bridge With Free Wheeling Diode Symbol Test Conditions Characteristic Values Unit 5 mA VT o IT=80A; TVJ=25 C 1.64 V VTO For power-loss calculations only 0.85 V IR, ID TVJ=TVJM; VR=VRRM; VD=VDRM 11 rT VGT IGT VGD o m VD=6V; TVJ=25 C TVJ=-40oC 1.5 1.6 V VD=6V; TVJ=25oC TVJ=-40oC 100 200 mA TVJ=TVJM; VD=2/3VDRM 0.2 V 5 mA 450 mA 200 mA 2 us 250 us IGD IL tp=10us; IG=0.45A; diG/dt=0.45A/us IH TVJ=25oC; VD=6V; RGK= o TVJ=25 C o tgd tq TVJ=25 C; VD=1/2VDRM IG=0.45A; diG/dt=0.45A/us TVJ=TVJM; IT=20A; tp=200us; VR=100V VD=2/3VDRM; dv/dt=15V/us; di/dt=-10A/us typ. RthJC per thyristor/Diode; DC per module 0.9 0.18 K/W RthJK per thyristor/Diode; DC per module 1.1 0.22 K/W dS Creeping distance on surface 16.1 mm dA Creepage distance in air 7.1 mm a Maximum allowable acceleration 50 m/s2