VVZ 70 VTO 70 Three Phase Rectifier Bridge IdAV = 70 A VRRM = 800-1600 V Preliminary data VRSM VDSM VRRM VDRM V V 800 1200 1400 1600 800 1200 1400 1600 2 3 1 A C D E Type 2 C D E 70-08io7 70-12io7 70-14io7 70-16io7 2 C D E 5 3 4 Symbol Test Conditions IdAV ¬ IdAVM ¬ IFRMS, ITRMS TK = 85°C, module module per leg IFSM, ITSM TVJ = 45°C; VR = 0 V (dv/dt)cr 1 A C D E 6 2 3 1 5 4 6 A B B VTOF 70 Maximum Ratings 70 70 36 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 550 600 A A TVJ = TVJM VR = 0 V t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 500 550 A A TVJ = 45°C VR = 0 V t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1520 1520 A2s A2s TVJ = TVJM VR = 0 V t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1250 1250 A2s A2s 150 A/µs 500 A/µs 1000 V/µs TVJ = 125°C repetitive, IT = 50 A f = 50 Hz, tP = 200 µs VD = 2/3 VDRM IG = 0.3 A, non repetitive, I T = 1/2 IdAV diG/dt = 0.3 A/µs TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) VRGM PGM B VVZF 70 VTO 70 (di/dt)cr A 1 B xxx = type I2t 3 VVZ 70 xxx xxx xxx xxx TVJ = TVJM IT = ITAVM PGAVM tp = 30 µs tp = 500 µs tp = 10 ms TVJ TVJM Tstg VISOL 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Md Mounting torque (M5) (10-32 UNF) Weight VVZF 70 VTOF 70 10 V 10 5 1 0.5 W W W W -40...+125 125 -40...+125 °C °C °C 2500 3000 V~ V~ ≤ ≤ ≤ 5 ± 15 % 44 ± 15 % 50 Features Package with copper base plate Isolation voltage 3000 V~ Planar passivated chips Low forward voltage drop ¼" fast-on power terminals Applications Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability Small and light weight Dimensions in mm (1 mm = 0.0394") Nm lb.in. g Data according to IEC 60747 refer to a single diode/thyristor unless otherwise stated ¬ for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and dimensions. © 1999 IXYS All rights reserved F2 - 51 F2 VVZ 70 VTO 70 Symbol Test Conditions ID, IR TVJ = TVJM; VR = VRRM; VD = VDRM ≤ 5 VT IT ≤ 1.64 V VT0 rT For power-loss calculations only 0.85 11 V mΩ VGT VD = 6 V; IGT VD = 6 V; ≤ ≤ ≤ ≤ 1.5 1.6 100 200 V V mA mA VGD IGD TVJ = TVJM; ≤ ≤ 0.2 5 V mA IL TVJ = 25°C; tP = 10 µs IG = 0.45 A; diG/dt = 0.45 A/µs ≤ 450 mA IH TVJ = 25°C; VD = 6 V; RGK = ∞ ≤ 200 mA tgd TVJ = 25°C; VD = 1/2 VDRM IG = 0.45 A; diG/dt = 0.45 A/µs ≤ 2 µs tq TVJ = TVJM; IT = 20 A, tP = 200 µs; di/dt = -10 A/µs typ. VR = 100 V; dv/dt = 15 V/µs; VD = 2/3 VDRM 250 µs RthJC per thyristor / Diode; DC per module per thyristor / Diode; DC per module RthJH dS dA a VVZF 70 VTOF 70 Characteristic Values = 80 A; TVJ = 25°C TVJ = TVJ = TVJ = TVJ = 25°C -40°C 25°C -40°C VD = 2/3 VDRM Creeping distance on surface Creepage distance in air Max. allowable acceleration mA 0.9 0.15 1.1 0.157 K/W K/W K/W K/W 16.1 7.5 50 mm mm m/s 2 F2 © 1999 IXYS All rights reserved F2 - 52