Technische Information / Technical Information IGBT-Module IGBT-Modules BSM100GAL120DLC K Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Tvj= 25° C VCES 1200 V TC = 80 °C IC,nom. 100 A TC = 25 °C IC 205 A Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, TC = 80°C ICRM 200 A Gesamt-Verlustleistung total power dissipation TC=25°C, Transistor Ptot 830 W VGES +/- 20V V IF 100 A IFRM 200 A I t 2 1,71 kA s VISOL 2,5 kV Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms Grenzlastintegral der Diode 2 I t - value, Diode VR = 0V, t p = 10ms, T Vj = 125°C Isolations-Prüfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. 2 Charakteristische Werte / Characteristic values min. typ. max. - 2,1 2,6 V - 2,4 2,9 V VGE(th) 4,5 5,5 6,5 V Transistor / Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage IC = 100A, V GE = 15V, Tvj = 25°C VCE sat IC = 100A, V GE = 15V, Tvj = 125°C Gate-Schwellenspannung gate threshold voltage IC = 4mA, V CE = VGE, Tvj = 25°C Gateladung gate charge VGE = -15V...+15V QG - 1,1 - µC Eingangskapazität input capacitance f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V Cies - 6,5 - nF Rückwirkungskapazität reverse transfer capacitance f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V Cres - 0,5 - nF Kollektor-Emitter Reststrom collector-emitter cut-off current VCE = 1200V, V GE = 0V, Tvj = 25°C ICES - - 5 mA Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, V GE = 20V, Tvj = 25°C IGES - - 400 nA prepared by: MOD-D2; Mark Münzer date of publication: 2003-01-23 approved by: SM TM; Wilhelm Rusche revision: 3.0 1(8) DB_BSM100GAL120DLC k_3.0 2003-01-23 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM100GAL120DLC K Charakteristische Werte / Characteristic values min. Transistor / Transistor Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) VGE = ±15V, R G = 5,6Ω, Tvj = 25°C td,on VGE = ±15V, R G = 5,6Ω, Tvj = 125°C Anstiegszeit (induktive Last) rise time (inductive load) tr VGE = ±15V, R G = 5,6Ω, Tvj = 25°C td,off VGE = ±15V, R G = 5,6Ω, Tvj = 25°C Einschaltverlustenergie pro Puls turn-on energy loss per pulse IC = 100A, V CE = 600V, V GE = ±15V Abschaltverlustenergie pro Puls turn-off energy loss per pulse IC = 100A, V CE = 600V, V GE = ±15V RG = 5,6Ω, Tvj = 125°C, Lσ = 60nH RG = 5,6Ω, Tvj = 125°C, Lσ = 60nH - µs - µs - 0,05 - µs - 0,05 - µs - 0,35 - µs - 0,40 - µs tf - 0,06 - µs - 0,08 - µs Eon - 10 - mJ Eoff - 12 - mJ ISC - 650 - A LσCE - 40 - nH RCC‘+EE‘ - 0,85 - mΩ min. typ. max. - 1,8 2,3 V - 1,7 2,2 V tP ≤ 10µs, V GE ≤ 15V, R G = 5,6Ω TVj≤125°C, V CC=900V, V CEmax=VCES -LσCE ·di/dt Modulinduktivität stray inductance module Modul Leitungswiderstand, Anschlüsse – Chip module lead resistance, terminals – chip 0,06 0,06 IC = 100A, V CE = 600V VGE = ±15V, R G = 5,6Ω, Tvj = 125°C Kurzschlußverhalten SC Data - IC = 100A, V CE = 600V VGE = ±15V, R G = 5,6Ω, Tvj = 125°C Fallzeit (induktive Last) fall time (inductive load) max. IC = 100A, V CE = 600V VGE = ±15V, R G = 5,6Ω, Tvj = 25°C VGE = ±15V, R G = 5,6Ω, Tvj = 125°C Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) typ. IC = 100A, V CE = 600V TC=25°C Charakteristische Werte / Characteristic values Inversdiode / free-wheel diode Durchlaßspannung forward voltage IF = 100A, V GE = 0V, Tvj = 25°C Rückstromspitze peak reverse recovery current IF = 100A, - di F/dt = 2700A/µs VF IF = 100A, V GE = 0V, Tvj = 125°C VR = 600V, V GE = -15V, Tvj = 25°C IRM VR = 600V, V GE = -15V, Tvj = 125°C Sperrverzögerungsladung recovered charge 125 - A 155 - A IF = 100A, - di F/dt = 2700A/µs VR = 600V, V GE = -15V, Tvj = 25°C Qr VR = 600V, V GE = -15V, Tvj = 125°C Abschaltenergie pro Puls reverse recovery energy - - 12 - µC - 22 - µC - 4 - mJ mJ IF = 100A, - di F/dt = 2700A/µs VR = 600V, V GE = -15V, Tvj = 25°C Erec VR = 600V, V GE = -15V, Tvj = 125°C Chopperdiode / chopper diode Durchlaßspannung forward voltage IF = 150A, V GE = 0V, Tvj = 25°C Rückstromspitze peak reverse recovery current IF = 150A, - di F/dt = 3100A/µs VF IF = 150A, V GE = 0V, Tvj = 125°C VR = 600V, VGE = -15V, T vj = 25°C IRM VR = 600V, VGE = -15V, T vj = 125°C Sperrverzögerungsladung recovered charge IF = 150A, - di F/dt = 3100A/µs Abschaltenergie pro Puls reverse recovery energy IF = 150A, - di F/dt = 3100A/µs VR = 600V, VGE = -15V, T vj = 25°C Qr VR = 600V, VGE = -15V, T vj = 125°C VR = 600V, VGE = -15V, T vj = 25°C VR = 600V, VGE = -15V, T vj = 125°C 2(8) Erec - 9 - min. typ. max. - 1,8 2,3 V - 1,7 2,2 V - 180 - A - 220 - A - 17 - µC - 32 - µC - 4 - mJ - 10 - mJ DB_BSM100GAL120DLC k_3.0 2003-01-23 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM100GAL120DLC K Thermische Eigenschaften / Thermal properties Innerer Wärmewiderstand thermal resistance, junction to case Transistor Wechelr. / transistor inverter RthJC min. typ. max. - - 0,15 K/W Inversdiode / free wheel diode - - 0,30 K/W Chopper Diode / chopper diode - - 0,25 K/W RthCK - 0,05 - K/W Höchstzulässige Sperrschichttemperatur maximum junction temperature Tvj max - - 150 °C Betriebstemperatur operation temperature Tvj op -40 - 125 °C Tstg -40 - 125 °C Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Modul / per module λΠαστε = 1 W/m * K / λgrease = 1 W/m * K Lagertemperatur storage temperature Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage case, see appendix Innere Isolation internal insulation Al2O3 Kriechstrecke creepage distance 20 mm Luftstrecke clearance distance 11 mm CTI comperative tracking index 275 Anzugsdrehmoment f. mech. Befestigung mounting torque Schraube / screw M6 M 3,0 - 6,0 Anzugsdrehmoment f. elektr. Anschlüsse terminal connection torque Anschlüsse / terminals M5 M 2,5 - 5,0 Gewicht weight G 250 Nm Nm g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3(8) DB_BSM100GAL120DLC k_3.0 2003-01-23 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM100GAL120DLC K Ausgangskennlinie (typisch) Output characteristic (typical) IC = f (VCE) V GE = 15V 200 175 Tvj = 25°C Tvj = 125°C 150 IC [A] 125 100 75 50 25 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) IC = f (VCE) T vj = 125°C 200 175 VGE = 17V 150 VGE = 15V VGE = 13V VGE = 11V IC [A] 125 VGE = 9V VGE = 7V 100 75 50 25 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] 4(8) DB_BSM100GAL120DLC k_3.0 2003-01-23 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM100GAL120DLC K Übertragungscharakteristik (typisch) Transfer characteristic (typical) IC = f (VGE) VCE = 20V 200 175 Tvj = 25°C Tvj = 125°C 150 IC [A] 125 100 75 50 25 0 5 6 7 8 9 10 11 12 VGE [V] Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) IF = f (VF) 200 175 Tvj = 25°C Tvj = 125°C 150 IF [A] 125 100 75 50 25 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VF [V] 5(8) DB_BSM100GAL120DLC k_3.0 2003-01-23 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM100GAL120DLC K Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) Switching losses (typical) VGE=±15V, RG=5,6 Ω, VCE = 600V, T vj = 125°C 28 Eoff 24 Eon Erec E [mJ] 20 16 12 8 4 0 0 25 50 75 100 125 150 175 200 IC [A] Schaltverluste (typisch) Switching losses (typical) Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) VGE=±15V , I C = 100A , V CE = 600V , T vj = 125°C 40 Eoff 35 Eon Erec 30 E [mJ] 25 20 15 10 5 0 0 5 10 15 20 25 30 35 40 45 50 RG [Ω] 6(8) DB_BSM100GAL120DLC k_3.0 2003-01-23 Technische Information / Technical Information BSM100GAL120DLC K IGBT-Module IGBT-Modules Transienter Wärmewiderstand Transient thermal impedance ZthJC = f (t) 1 Zth:Diode Zth:IGBT 0,01 0,001 0,001 0,01 0,1 1 10 t [s] i ri [K/kW] : IGBT τi [s] : IGBT ri [K/kW] : Diode τi [s] : Diode 1 2 3 4 16,78 50,78 66,16 16,28 0,002 0,03 0,066 1,655 39,26 103,98 113,45 43,31 0,002 0,03 0,072 0,682 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) VGE = 15V, R G = 5,6 Ω, T vj= 125°C 240 200 160 IC [A] ZthJC [K / W] 0,1 IC,Modul IC,Chip 120 80 40 0 0 200 400 600 800 1000 1200 1400 VCE [V] 7(8) DB_BSM100GAL120DLC k_3.0 2003-01-23 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM100GAL120DLC K 8(8) DB_BSM100GAL120DLC k_3.0 2003-01-23