STT90 Thyristor-Thyristor Modules Dimensions in mm (1mm=0.0394") Type STT90GK08 STT90GK12 STT90GK14 STT90GK16 STT90GK18 STT90GK20 Symbol VRSM VDSM V 900 1300 1500 1700 1900 2100 Test Conditions ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine VRRM VDRM V 800 1200 1400 1600 1800 2000 Maximum Ratings Unit 180 90 A ITSM, IFSM TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 1700 1800 1540 1640 A 2 TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 14450 13500 11850 11300 A2s TVJ=TVJM f=50Hz, tp=200us VD=2/3VDRM IG=0.45A diG/dt=0.45A/us repetitive, IT=250A 150 non repetitive, IT=ITAVM 500 i dt (di/dt)cr A/us TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) 1000 V/us 10 5 W PGAV 0.5 W VRGM 10 V TVJ TVJM Tstg -40...+125 125 -40...+125 (dv/dt)cr PGM VISOL Md Weight TVJ=TVJM IT=ITAVM 50/60Hz, RMS _ IISOL<1mA tp=30us tp=300us t=1min t=1s Mounting torque (M5) Terminal connection torque (M5) Typical including screws o C 3000 3600 V~ 2.5-4.0/22-35 2.5-4.0/22-35 Nm/lb.in. 90 g STT90 Thyristor-Thyristor Modules Symbol Test Conditions Characteristic Values Unit 5 mA IT, IF=300A; TVJ=25 C 1.74 V For power-loss calculations only (TVJ=125oC) 0.85 V IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM VT, VF VTO o 3.2 rT VGT IGT VGD o m VD=6V; TVJ=25 C TVJ=-40oC 2.5 2.6 V VD=6V; TVJ=25oC TVJ=-40oC 150 200 mA TVJ=TVJM; VD=2/3VDRM 0.2 V 10 mA IGD o IL TVJ=25 C; tp=10us; VD=6V IG=0.45A; diG/dt=0.45A/us 450 mA IH TVJ=25oC; VD=6V; RGK= 200 mA 2 us 185 us 170 uC 45 A o tgd TVJ=25 C; VD=1/2VDRM IG=0.45A; diG/dt=0.45A/us tq TVJ=TVJM; IT=150A; tp=200us; -di/dt=10A/us VR=100V; dv/dt=20V/us; VD=2/3VDRM QS TVJ=TVJM; IT, IF=50A; -di/dt=6A/us typ. IRM RthJC per thyristor/diode; DC current per module 0.3 0.15 K/W RthJK per thyristor/diode; DC current per module 0.5 0.25 K/W dS Creeping distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s2 FEATURES APPLICATIONS ADVANTAGES * International standard package * Copper base plate * Planar passivated chips * Isolation voltage 3600 V~ * DC motor control * Softstart AC motor controller * Light, heat and temperature control * Space and weight savings * Simple mounting with two screws * Improved temperature and power cycling * Reduced protection circuits STT90 Thyristor-Thyristor Modules Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 2 i2dt versus time (1-10 ms) Fig. 3 Power dissipation versus on-state current and ambient temperature (per thyristor or diode) Fig. 2a Maximum forward current at case temperature Fig. 4 Gate trigger characteristics 3 x STT90 Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Fig. 6 Gate trigger delay time STT90 Thyristor-Thyristor Modules Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature 3 x STT90 STT90 Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) RthJC for various conduction angles d: d DC 180oC 120oC 60oC 30oC RthJC (K/W) 0.3 0.31 0.33 0.35 0.37 Constants for ZthJC calculation: i 1 2 3 STT90 Rthi (K/W) ti (s) 0.008 0.054 0.238 0.0019 0.047 0.3 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) RthJK for various conduction angles d: d DC 180oC 120oC 60oC 30oC RthJK (K/W) 0.5 0.51 0.53 0.55 0.57 Constants for ZthJK calculation: i 1 2 3 4 Rthi (K/W) ti (s) 0.008 0.054 0.238 0.2 0.0019 0.047 0.3 1.25