NTMS4107N Power MOSFET 30 V, 18 A, Single N−Channel, SO−8 Features • Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG • Optimized for Low Side Synchronous Applications • High Speed Switching Capability Applications http://onsemi.com V(BR)DSS • Notebook Computer Vcore Applications • Network Applications • DC−DC Converters Rating Gate−to−Source Voltage Continuous Drain C Current t (N (Note t 1) Dissipation Power Dissi ation (Note 1) D Unit 30 V VGS 20 V ID 15 A 11 t 10 s TA = 25°C 18 PD S 1.67 W MARKING DIAGRAM/ PIN ASSIGNMENT TA = 25°C 25 C 2.5 ID TA = 85°C TA = 25°C Pulsed Drain Current G tp = 10 s Operating Junction and Storage Temperature Continuous Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 30 V, VGS = 10 V, IPK = 42 A, L = 1 mH, RG = 25 ) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) 11 A PD 0.93 W IDM 56 A TJ, Tstg −55 to 150 °C IS 3.0 A EAS 880 mJ TL 260 °C 1 SO−8 CASE 751 STYLE 12 4107N A L Y W Source Source Source Gate 8 Drain Drain Drain Drain (Top View) = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week ORDERING INFORMATION THERMAL RESISTANCE RATINGS Rating 1 8 8.0 4107N ALYW Steady y State Dissipation Power Dissi ation (Note 2) Value VDSS TA = 85°C TA = 25°C Continuous Drain C rrent (Note 2) Current Symbol TA = 25°C t 10 s 18 A 4.7 m @ 4.5 V Steady State Steady State ID MAX 3.4 m @ 10 V 30 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Drain−to−Source Voltage RDS(on) TYP Symbol Max Unit Device Package Shipping† Junction−to−Ambient − Steady State (Note 1) RJA 75 °C/W NTMS4107NR2 SO−8 2500/Tape & Reel Junction−to−Ambient − t 10 s (Note 1) RJA 50 Junction−to−Ambient − Steady State (Note 2) RJA 135 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1″ sq. pad size (Cu area = 1.127″ sq. [1 oz] including traces). 2. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 0.412″ sq.). Semiconductor Components Industries, LLC, 2005 March, 2005 − Rev. 1 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTMS4107N/D NTMS4107N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 A 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 21 VGS = 0 V V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 A 100 A nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) ( ) 1.0 2.5 7.4 V mV/°C m VGS = 4.5 V, ID = 14 A 4.7 5.5 VGS = 10 V, ID = 15 A 3.4 4.5 VDS = 15 V, ID = 18 A 25 S pF gFS CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS 6000 Output Capacitance COSS 1030 Reverse Transfer Capacitance CRSS 550 Total Gate Charge QG(TOT) 45 Threshold Gate Charge QG(TH) VGS = 0 V,, f = 1.0 MHz,, VDS = 15 V nC 6.5 VGS = 4 4.5 5V V, VDS = 15 V V, ID = 18 A Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 19.3 RG 0.60 td(ON) 9.0 ns Gate Resistance 16.3 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 10 V, VDS = 15 V, ID = 1.0 A, RG = 6.0 tf 10 94 38 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.8 TJ = 125°C 0.6 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V V, IS = 3 3.0 0A 41 VGS = 0 V, dIS/dt = 100 A/s, IS = 3.0 A QRR http://onsemi.com 2 V ns 20 21 48 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. 1.1 nC NTMS4107N TYPICAL PERFORMANCE CURVES 28 3.2 V 24 TJ = 25°C VDS ≥ 10 V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 28 VGS = 4 V to 10 V 20 3.0 V 16 12 8 2.8 V 4 24 20 16 12 TJ = 125°C 8 TJ = 25°C 4 2.6 V 0 1 2 3 4 5 6 7 8 9 10 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 4 3 1 2 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE () RDS(on), DRAIN−TO−SOURCE RESISTANCE () TJ = −55°C 0 0 0.008 VGS = 10 V 0.007 0.006 0.005 TJ = 125°C 0.004 0.003 TJ = 25°C 0.002 TJ = −55°C 0.001 0 2 6 10 14 18 22 26 0.008 TJ = 25°C 0.007 0.006 VGS = 4.5 V 0.005 0.004 0.003 VGS = 10 V 0.002 0.001 0 2 6 14 18 22 26 Figure 4. On−Resistance vs. Drain Current and Gate Voltage Figure 3. On−Resistance vs. Drain Current and Temperature 2 1000000 VGS = 0 V ID = 16 A VGS = 12 V 100000 1.5 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 10 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) TJ = 150°C 10000 1 0.5 0 −50 5 TJ = 125°C 1000 100 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 30 NTMS4107N TYPICAL PERFORMANCE CURVES 10 7000 TJ = 25°C 6000 Ciss VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) C, CAPACITANCE (pF) 8000 5000 4000 3000 2000 Coss 1000 0 Crss 0 5 10 15 20 25 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 8 VGS 6 QT 4 QGS ID = 16 A TJ = 25°C 0 10 0 Figure 7. Capacitance Variation 90 100 12 100 IS, SOURCE CURRENT (AMPS) VDD = 15 V ID = 1 A VGS = 4.5 V td(off) tf td(on) 10 tr VGS = 0 V TJ = 25°C 10 8 6 4 2 0 1 10 RG, GATE RESISTANCE (OHMS) 0 100 Figure 9. Resistive Switching Time Variation vs. Gate Resistance 0.4 0.2 0.6 0.8 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 10. Diode Forward Voltage vs. Current 1000 ID, DRAIN CURRENT (AMPS) t, TIME (ns) 20 60 70 80 30 40 50 QG, TOTAL GATE CHARGE (nC) Figure 8. Gate−To−Source and Drain−To−Source Voltage vs. Total Charge 1000 1 QGD 2 100 10 s 100 s 10 1 1 ms 10 ms VGS = 20 V SINGLE PULSE TC = 25°C 0.1 dc RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 0.1 10 1 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 100 1 NTMS4107N PACKAGE DIMENSIONS SO−8 CASE 751−07 ISSUE AE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. −X− A 8 5 S B 1 0.25 (0.010) Y M M 4 K −Y− G C N DIM A B C D G H J K M N S X 45 SEATING PLANE −Z− 0.10 (0.004) H D 0.25 (0.010) M Z Y S X M J S MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0 8 0.25 0.50 5.80 6.20 STYLE 12: PIN 1. 2. 3. 4. 5. 6. 7. 8. SOLDERING FOOTPRINT 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 http://onsemi.com 5 mm inches SOURCE SOURCE SOURCE GATE DRAIN DRAIN DRAIN DRAIN INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 8 0.010 0.020 0.228 0.244 NTMS4107N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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