NTVS3141P Power MOSFET −20 V, −3.7 A, 85 mW, Single P−Channel, CSP 1.0x1.5x0.65 mm Features • • • • Low RDS(on) at Low Gate Voltage Chip Scale Packaging High Power Density (A/mm2) This is a Pb−Free Device http://onsemi.com V(BR)DSS RDS(ON) MAX ID MAX (Note 1) 85 mΩ @ −4.5 V Applications • Load Switch in Cell Phone, DSC, PMP, GPS, PC’s • Battery Charging Switch 123 mΩ @ −2.5 V −20 V 200 mΩ @ −1.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage VGS "8 V ID −3.7 A ID −2.9 A PD 1.5 W PD 0.9 W Rating Continuous Drain Current (Note 1) Steady State TA = 25°C Continuous Drain Current (Note 2) Steady State TA = 25°C Power Dissipation (Note 1) Steady State TA = 25°C Power Dissipation (Note 2) Steady State Pulsed Drain Current TA = 25°C IDM −15 A −55 to 150 °C Source Current (Body Diode) IS −1.1 A Lead Temperature for Soldering Purposes (IR/Convection) TL 250 °C G D A1 6 PIN FLIP−CHIP 1.0 x 1.5 CASE 499BC PIN CONNECTION AND MARKING DIAGRAM THERMAL RESISTANCE RATINGS Rating S P−Channel MOSFET TJ, TSTG tp = 10 ms Operating Junction and Storage Temperature −3.7 A 150 mΩ @ −1.8 V Symbol Max Unit Junction−to−Ambient – Steady State (Note 1) RθJA 83 °C/W Junction−to−Ambient – Steady State (Note 2) RθJA 133 °C/W 1. Surface−mounted on FR4 board using 1 inch sq pad size (Cu area = 1 in sq [2 oz] including traces) 2. Surface−mounted on FR4 board using 77.3 sq mm min pad, 2 oz Cu. 3141 = Specific Device Code WW = Work Week ORDERING INFORMATION Device Package Shipping† NTVS3141PT2G CSP−6 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 March, 2009 − Rev. 0 1 Publication Order Number: NTVS3141P/D NTVS3141P MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Test Condition Min Typ Max Unit Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −20 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = −250 mA, ref to 25°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = −20 V −1.0 mA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±8 V ±0.1 mA VGS(TH) VGS = VDS, ID = −250 mA −1.2 V OFF CHARACTERISTICS V −9.0 mV/°C ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) −0.4 3.0 Forward Transconductance mV/°C VGS = −4.5 V, ID = −1.0 A 73 85 VGS = −2.5 V, ID = −1.0 A 87 123 VGS = −1.8 V, ID = −1.0 A 107 150 134 200 VGS = −1.5 V, ID = −1.0 A On to State Drain Current −0.7 ID(on) VGS = −4.5 V, VDS = −5.0 V gFS VDS = −5.0 V, ID = −1.0 A −10 mW A 6.0 S 840 pF CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Gate Resistance VGS = 0 V, f = 1.0 MHz, VDS = −10 V 155 120 9.0 VGS = −4.5 V, VDS = −10 V, ID = −1.0 A 1.0 f = 1 MHz 9.0 RG 13 nC 3.0 W SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) VGS = −4.5 V, VDS = −10 V, ID = −1.0 A, RG = 6.0 W tf 7.5 20 9.5 20 35 65 50 80 −1.2 ns DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = −1.1 A −0.7 Reverse Recovery Time tRR 37 ns Reverse Recovery Charge QRR VGS = 0 V, di/dt = 100 A/ms, IS = −1.1 A 23 nC 3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2% http://onsemi.com 2 V NTVS3141P TYPICAL PERFORMANCE CURVES VGS = −4.5 V 16 TJ = 25°C −2.5 V −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) 16 −3.5 V 12 −2.0 V 8 4 −1.5 V 0 0.5 1.0 1.5 2.0 2.5 3.5 3.0 8 4.0 TJ = 25°C Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0.160 0.120 0.080 2 1 3 4 6 5 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 0.200 VGS = −1.5 V VGS = −2.5 V 0.080 VGS = −4.5 V 0.040 −IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.0 0.9 0 25 50 75 100 125 VGS = −1.8 V 0.120 1 3 5 7 9 11 13 15 17 −ID, DRAIN CURRENT (AMPS) 10000 ID = −1 A VGS = −4.5 V −25 TJ = 25°C Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.1 0.8 −50 2.5 0.160 Figure 3. On−Resistance vs. Gate Voltage 1.2 TJ = −55°C 2.0 1.0 1.5 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) ID = −1 A TJ = 25°C 1.3 TJ = 125°C 4 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.200 0.040 12 0 0.5 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 VDS ≥ 10 V 150 VGS = 0 V TJ = 150°C 1000 TJ = 125°C 100 10 0 5 10 15 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 20 NTVS3141P TYPICAL PERFORMANCE CURVES VGS = 0 V TJ = 25°C 1200 1000 −VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 1400 Ciss 800 600 400 Coss 200 0 0 Crss 15 5 10 DRAIN−TO−SOURCE VOLTAGE (V) 20 5 QT 4 3 2 Q1 VDS = −10 V ID = −1 A TJ = 25°C 1 0 0 Figure 7. Capacitance Variation 100 tr td(on) 10 10 RG, GATE RESISTANCE (OHMS) −IS, SOURCE CURRENT (AMPS) td(off) tf 1.2 10 0.8 0.6 0.4 0.2 0 0.2 100 VGS = 0 V TJ = 25°C 1.0 Figure 9. Resistive Switching Time Variation vs. Gate Resistance 0.4 0.3 0.5 0.7 0.6 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) 10 1 0.1 0.01 0.001 0.1 0.8 Figure 10. Diode Forward Voltage vs. Current 100 −ID, DRAIN CURRENT (AMPS) t, TIME (ns) 4 6 8 Qg, TOTAL GATE CHARGE (nC) 1.4 VDD = −10 V ID = −1.0 A VGS = −4.5 V 1 2 Figure 8. Gate−to−Source Voltage vs. Total Gate Charge 1000 1 Q2 10 ms 100 ms 1 ms VGS = 10 V SINGLE PULSE TC = 25°C 10 ms RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT dc 1 10 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 100 NTVS3141P EFFECTIVE TRANSIENT THERMAL RESISTANCE TYPICAL PERFORMANCE CURVES 1000 100 D = 0.5 0.2 10 0.1 0.05 0.02 1 0.01 0.1 SINGLE PULSE 0.01 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 t, TIME (sec) 0.1 Figure 12. Thermal Response http://onsemi.com 5 1 10 100 1000 NTVS3141P PACKAGE DIMENSIONS 6 PIN FLIP−CHIP, 1.0x1.5 CASE 499BC ISSUE A È PIN A1 REFERENCE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. COPLANARITY APPLIES TO THE SPHERICAL CROWNS OF THE SOLDER BALLS. A B D E DIM A A1 A2 b D E e TOP VIEW A A2 0.10 C A1 MILLIMETERS MIN MAX −−− 0.64 0.22 0.28 0.34 0.36 0.29 0.34 0.92 1.00 1.42 1.50 0.50 BSC 0.05 C 6X C SIDE VIEW SEATING PLANE e e C B A 6X b 1 2 0.05 C A B 0.03 C BOTTOM VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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