FJC2383 NPN Epitaxial Silicon Transistor Color TV Audio Output & Color TV Vertical Deflection Output Marking 2 3 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Ratings Units VCBO Collector-Base Voltage Parameter 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current 1 A IB Base Current 0.5 A PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics T Symbol a= 25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB = 150V, IE = 0 1 µA IEBO Emitter Cut-off Current VEB = 6V, IC = 0 1 µA BVCEO Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 160 hFE DC Current Gain VCE = 5V, IC = 200mA 100 320 1.5 V 0.45 0.75 V VCE (sat) Collector-Emitter Saturation Voltage IC = 500mA, IB = 50mA VBE (on) Base-Emitter On Voltage VCE = 5V, IC = 5mA fT Current Gain Bandwidth Product VCE = 5V, IC = 200mA Cob Output Capacitance VCB = 10V, IE = 0, f = 1MHz ©2005 Fairchild Semiconductor Corporation FJC2383 Rev. B 1 20 V 100 MHz 20 pF www.fairchildsemi.com FJC2383 NPN Epitaxial Silicon Transistor July 2005 Classification O Y hFE 100 ~ 200 160 ~ 320 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 2383 FJC2383 SOT-89 13” -- 4,000 FJC2383 Rev. B 2 www.fairchildsemi.com FJC2383 NPN Epitaxial Silicon Transistor hFE Classification Figure 1. Static Characteristic Figure 2. DC Current Gain 1000 EMITTER COMMON o Ta=25 C 1.2 IB = 15mA EMITTER COMMON IB = 10mA 1.0 hFE, DC CURRENT GAIN Ic[mA], COLLECTOR CURRENT 1.4 IB = 6mA 0.8 IB = 4mA IB = 3mA 0.6 IB = 2.5mA 0.4 IB = 2mA IB = 1.5mA IB = 1mA 0.2 VCE=10V 100 VCE=5V 10 IB = 0.5mA 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 10 1.4 VCE[V], COLLECTOR-EMITTER VOLTAGE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 4. Collector-Emitter Saturation Voltage 1.0 IC[A], COLLECTOR CURRENT EMITTER COMMON IC/IB=10 0.8 0.6 0.4 0.2 0.2 0.4 0.6 0.8 1 EMITTER COMMON o Ta = 25 C 0.1 IC/IB=10 IC/IB=5 0.01 1E-3 1.0 1 10 Figure 5. Base-Emitter On Voltage 1000 EMITTER COMMON f = 1MHz EMITTER COMMON IC/IB=10 o 0.8 Ta = 25 C Cob[pF], CAPACITANCE IC[A], COLLECTOR CURRENT 1000 Figure 6. Collectro Output Capacitance 1.0 0.6 0.4 0.2 0.2 0.4 0.6 0.8 100 10 1 1.0 1 10 100 1000 VCB[V], COLLECTOR BASE VOLTAGE VBE[V], BASE-EMITTER VOLTAGE FJC2383 Rev. B 100 IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE 0.0 0.0 1000 IC[mA], COLLECTOR CURRENT Figure 3. DC Current Gain 0.0 0.0 100 3 www.fairchildsemi.com FJC2383 NPN Epitaxial Silicon Transistor Typical Performance Characteristics FJC2383 NPN Epitaxial Silicon Transistor Typical Performance Characteristics (Continued) fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT Figure 7. Current Gain Bandwidth Product 1000 EMITTER COMMON o Ta = 25 C 100 10 1 1 10 100 1000 IC[mA], COLLECTOR CURRENT FJC2383 Rev. B 4 www.fairchildsemi.com FJC2383 NPN Epitaxial Silicon Transistor Mechanical Dimensions SOT-89 1.50 ±0.20 4.50 ±0.20 (0.40) 4.10 (1.10) 2.50 ±0.20 C0.2 ±0.20 (0.50) 1.65 ±0.10 0.50 ±0.10 0.40 ±0.10 0.40 +0.10 –0.05 1.50 TYP 1.50 TYP Dimensions in Millimeters FJC2383 Rev. B 5 www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 6 FJC2383 Rev. B www.fairchildsemi.com FJC2383 NPN Epitaxial Silicon Transistor TRADEMARKS