MA P 3 0 7 9 The item can replace 2SK3079 Approved by: Checked by: Issued by: SPECIFICATION PRODUCT: N-channel MOSFET MODEL: MA P 3 0 7 9 SOT 2 2 3 HOPE MICROELECTRONIC CO.,LIMITED Tel:+86-755-82973805 Fax:+86-755-82973550 E-mail: [email protected] Page 1 of 3 http://www.hoperf.com MAP3079 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) l Output Power l Gain : PO = 33.0dBmW (Min) : GP = 7.0dB (Min) l Drain Efficiency : ηD = 40% (Min) Unit: mm MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 10 V Gate-Source Voltage VGSS 5 V ID 5 A Power Dissipation PD* 20.0 W Channel Temperature Tch 150 °C Storage Temperature Range Tstg −45~150 °C Drain Current *: Tc = 25°C When mounted on a 1.6 mm glass epoxy PCB Tel:+86-755-82973806 Fax:+86-755-82973550 E-mail: [email protected] 2 http://www.hoperf.com MAP3079 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Output Power PO Drain Efficiency ηD Power Gain GP VDS = 4.8V Iidle = 800 mA (VGS = adjust) f = 915MHz, Pi = 26dBmW ZG = ZL = 50 Ω Vth VDS = 4.8 V, ID = 0.5 mA Threshold Voltage MIN TYP. MAX UNIT 33.0 — — dBmW 40.0 — — % 7.0 — — dB 0.30 — 1.30 V Drain Cut-off Current IDSS VDS = 10 V, VGS = 0 V — — 10 µA Gate-Source Leakage Current IGSS VGS = 5 V, VDS = 0 V — — 5 µA Load Mismatch — VDS = 6.5 V, f = 915 MHz Pi = 26dBmW PO = 33.0dBmW (VGS = adjust) VSWR LOAD 10: 1 all phase No Degradation — CAUTION This transistor is the electrostatic sensitive device. Please handle with caution. RF OUTPUT POWER TEST FIXTURE Tel:+86-755-82973806 Fax:+86-755-82973550 E-mail: [email protected] 3 http://www.hoperf.com