HV254 Demo Kit Available 32-Channel High Voltage Amplifier Array Features Block Diagram ❑ 32 independent high voltage amplifiers V+ VPP ❑ Output voltage up to 250V ❑ 3V/µs output slew rate ❑ Fixed gain of 50V/V Anode Cathode ❑ High value internal feedback resistors + ❑ Very low operating current (typically 45µA per channel) - ❑ Integrated silicon diode for temperature sensing HVOUT0 V- VIN0 Application 49R R ❑ MEMS (microelctromechanical systems) driver ❑ Piezoelectric transducer driver V+ VPP ❑ Optical crosspoint switches (using MEMS technology) + VIN1 HVOUT1 - General Description V- The Supertex HV254 is a 32-channel high voltage amplifier array integrated circuit. It operates on a 275V high voltage supply and two low voltage supplies: +5.0V and –5.0V. Each channel has its own input and output. An integrated diode is included to help monitor die temperature. The input voltage can be from a DAC with a voltage range of 0V to the low voltage supply, V+. The output of the HV254FG will swing from 7V to 250V. It cannot swing to ground. With the internal gain set at 50V/V, a minimum input signal of 140mV will still maintain linearity. Input voltages below 140mV can be applied without damage to the device. The amplifier, however, will be saturated.Typical output load is equivalent to a 125Mohm resistor in parallel with a 100pF capacitor. The outputs have a guaranteed slew rate of at least 3V/µs. The internal closed loop gain is set at a nominal value of 34.0dB (50V/V). The HV254 is designed to operate with minimal power consumption while maintaining a guaranteed slew rate of 3V/µs. High value resistors are used for the gain setting to minimize current on the feedback path. 49R R V+ VPP + VIN31 - HVOUT31 PGND 49R R V- A113004 HV254 Ordering Information Device Package Options Maximum Output Voltage HV254 250V 100 Lead MQFP Die HV254FG HV254X Absolute Maximum Ratings* VPP, High voltage supply 275V V+, Low voltage positive supply 7.0V V-, Low voltage negative supply -7.0V HVOUT, Output voltage 0V to 275V VIN, Analog input signal 0V to 5.0V Storage temperature range -65°C to 150°C Maximum junction temperature 150°C *Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Electrical Characteristics Symbol (Over operating conditions unless otherwise noted.) Parameter Min Typ Max Units 275 V Conditions Operating Conditons VPP High voltage positive supply 50 V+ Low voltage positive supply 4.75 5.0 5.25 V V- Low voltage negative supply -4.75 -5.0 -5.25 V IPP VPP supply current 2.5 mA I+ V+ supply current 1.0 mA V+ = 5.25V I- VNN supply current -3.0 mA V- = -5.25V 1.0 TA Ambient temperature range -10 70 °C TJ Junction temperature range -10 T125 BD °C VPP=275V, All inputs set at 140mV. Typically 45µA per channel High Voltage Amplifier Output HVOUT HVOUT voltage swing 7.0 250 V VIN Input Voltage Range 0.14 V+ V HVOS HVOUT DC offset SR HVOUT slew rate ±1.5 ±1.52 V V/µs 3.0 RFB Feedback impedance 8 12 AV Closed loop gain 47.5 50.0 BW HVOUT -3dB channel bandwidth 5.0 CLOAD HVOUT capacitive load 0 2 VPP = 275V. 30mV input offset VPP = 275V, Load = 125MΩ//100pF MΩ 52.5 V/V KHz Stability (max drift) VPP = 275V, Load=125MΩ//100pF 100 pF 500 mV VPP = 275V Measured at HVOUT A113004 HV254 Diode Symbol Parameter Min Typ Max Units Conditions Power Up/Down Sequence The device can be damaged due to improper power up / down sequence. To prevent damage, please follow the acceptable power up /down sequences and add two external diodes as shown in the diagram below. The first diode is a high voltage diode across Vpp and V+ where the anode of the diode is connected to V+ and the cathode of the diode is connected to Vpp. Any low current high voltage diode such as a 1N4004 will be adequate. The second diode is a schottky diode across V- and DGnd where the anode of the schottky diode is connected to V- and the cathode is connected to DGnd. Any low current schottky diode such as a 1N5817 will be adequate. V+ VPP 1N4004 or similar V- PGND 1N5817 or similar Acceptable Power Up Sequences 1) VPP or 1) V- 2) V- 3) V+ 4) Inputs & Anode 2) V+ 3) VPP 4) Inputs & Anode 2) V+ 3) V- 4) VPP 2) VPP 3) V+ 4) V- Acceptable Power Down Sequences 1) Inputs & Anode or 1) Inputs & Anode Pin Description VPP High voltage positive supply. V+ Analog low voltage positive supply V- Analog low voltage negative supply PGND Device ground Anode Cathode Anode side of a low voltage silicon diode that can be used to monitor die temperature. Cathode side of a low voltage silicon diode that can be used to monitor die temperature. VIN0 to VIN31 Amplifie.r inputs HVOUT0 to HVOUT31 Amplifier outpu.ts 3 A113004 HV254 Pin Configuration 100 81 80 1 100-Lead MQFP (top view) 51 30 31 50 Pin Configuration Pin # Function Pin # Function Pin # Function Pin # Function 1 HVOUT29 26 HVOUT4 51 VIN2 76 VIN27 2 HVOUT28 27 HVOUT3 52 VIN3 77 VIN28 3 HVOUT27 28 HVOUT2 53 VIN4 78 VIN29 4 HVOUT26 29 HVOUT1 54 VIIN5 79 VIN30 5 HVOUT25 30 HVOUT0 55 VIN6 80 VIN31 6 HVOUT24 31 NC 56 VIN7 81 PGND 7 HVOUT23 32 NC 57 VIN8 82 NC 8 HVOUT22 33 NC 58 VIN9 83 NC 9 HVOUT21 34 NC 59 VIN10 84 NC 10 HVOUT20 35 NC 60 VIN11 85 NC 11 HVOUT19 36 VPP 61 VIN12 86 NC 12 HVOUT18 37 VPP 62 VIN13 87 NC 13 HVOUT17 38 NC 63 VIN14 88 NC 14 HVOUT16 39* Ibias 64 VIN15 89 NC 15 HVOUT15 40 NC 65 VIIN16 90 NC 16 HVOUT14 41 V- 66 VIN17 91 NC 17 HVOUT13 42 V- 67 VIN18 92 NC 18 HVOUT12 43 Anode 68 VIN19 93 NC 19 HVOUT11 44 Cathode 69 VIN20 94 NC 20 HVOUT10 45 V+ 70 VIN21 95 NC 21 HVOUT9 46 V+ 71 VIN22 96 NC 22 HVOUT8 47 NC 72 VIN23 97 NC 23 HVOUT7 48 PGND 73 VIN24 98 NC 24 HVOUT6 49 VIN0 74 VIN25 99 HVOUT31 25 HVOUT5 50 VIN1 75 VIN26 100 HVOUT30 * For internal testing only. Leave floating. NC=No Connect. 4 A113004 HV254 Pad Configuration (Not Drawn to Scale) PGND HVOUT31 VIN31 HVOUT30 VIN30 HVOUT29 VIN29 HVOUT28 VIN28 HVOUT27 VIN27 HVOUT26 VIN26 HVOUT25 VIN25 HVOUT24 VIN24 HVOUT23 VIN23 HVOUT22 VIN22 HVOUT21 VIN21 HVOUT20 VIN20 HVOUT19 VIN19 HVOUT18 VIN18 HVOUT17 VIN17 HVOUT16 VIN16 HVOUT15 VIN15 HVOUT14 VIN14 HVOUT13 VIN13 HVOUT12 VIN12 HVOUT11 VIN11 HVOUT10 VIN10 HVOUT 9 VIN9 HVOUT 8 VIN8 HVOUT 7 VIN7 HVOUT 6 VIN6 HVOUT 5 VIN5 HVOUT 4 VIN4 HVOUT 3 VIN3 HVOUT 2 VIN2 HVOUT 1 VIN1 HVOUT 0 5 PGND V+ V+ Anode Cathode V- V- VPP VPP VIN0 A113004 HV254 Die Size=4800µm X 11180µm (including scribes) Center of the die is 0,0. Coordinates for the four corners of the chip (not including scribe): X (µm) Y (µm) -2402 5492 -2402 -5492 2335 5492 2335 -5492 Notes: 1) The two PGND pads are not electrically connected. 2) The two V PP pads, V+ pads, and V- pads are electrically connected. 3) Backside potential is VPP. Leave floating or connect to V PP. 4) Anode and Cathode are connected to the P and N terminals (respectively) of a silicon diode which can be used to measure temperature. Pad Description VPP High voltage positive supply. Two VPP pads. V+ VVIN0 to VIN 31 HVOUT0 to HVOUT31 Low voltage positive supply. Two V+ pads. Low voltage negative supply. Two V- pads. Amplifier inputs. Amplifier outputs. PGND Anode Cathode Power ground. Two PGND pads. Need to be externally connected together. Anode side of diode. Cathode side of diode. Pad Coordinates Pad Name X (µm) Y (µm) Pad Name X (µm) Y (µm) Pad Name X (µm) HVOUT31 -1447.5 5244 HVOUT6 -1447.5 -2693.5 VIN9 2156.5 Y (µm) -1899 HVOUT30 -1447.5 4926.5 HVOUT5 -1447.5 -3011 VIN10 2156.5 -1585 HVOUT29 -1447.5 4609 HVOUT4 -1447.5 -3328.5 VIN11 2156.5 -1271 HVOUT28 -1447.5 4291.5 HVOUT3 -1447.5 -3646 VIN12 2156.5 -957 HVOUT27 -1447.5 3974 HVOUT2 -1447.5 -3963.5 VIN13 2156.5 -643 HVOUT26 -1447.5 3656.5 HVOUT1 -1447.5 -4281 VIN14 2156.5 -329 HVOUT25 -1447.5 3339 HVOUT0 -1447.5 -4598.5 VIN15 2156.5 -15 HVOUT24 -1447.5 3021.5 VPP -2057 -4985 VIN16 2156.5 299 HVOUT23 -1447.5 2704 VPP -1897 -4985 VIN17 2156.5 613 HVOUT22 -1447.5 2386.5 V- 1030.5 -5018 VIN18 2156.5 927 HVOUT21 -1447.5 2069 V- 1190.5 -5018 VIN19 2156.5 1241 HVOUT20 -1447.5 1751.5 Anode 1350.5 -5018 VIN20 2156.5 1555 HVOUT19 -1447.5 1434 Cathode 1550.5 -5018 VIN21 2156.5 1869 HVOUT18 -1447.5 1116.5 V+ 1710.5 -5018 VIN22 2156.5 2183 HVOUT17 -1447.5 799 V+ 1870.5 -5018 VIN23 2156.5 2497 HVOUT16 -1447.5 481.5 Pgnd 2034.5 -5018 VIN24 2156.5 2811 HVOUT15 -1447.5 164 VIN0 2156.5 -4725 VIN25 2156.5 3125 HVOUT14 -1447.5 -153.5 VIN1 2156.5 -4411 VIN26 2156.5 3439 HVOUT13 -1447.5 -471 VIN2 2156.5 -4097 VIN27 2156.5 3753 HVOUT12 -1447.5 -788.5 VIN3 2156.5 -3783 VIN28 2156.5 4067 HVOUT11 -1447.5 -1106 VIN4 2156.5 -3469 VIN29 2156.5 4381 HVOUT10 -1447.5 -1423.5 VIN5 2156.5 -3155 VIN30 2156.5 4695 HVOUT9 -1447.5 -1741 VIN6 2156.5 -2841 VIN31 2156.5 5009 HVOUT8 -1447.5 -2058.5 VIN7 2156.5 -2527 Pgnd 2156.5 5315.5 HVOUT7 -1447.5 -2376 VIN8 2156.5 -2213 DOC #: DSFP-HV254 A113004 6 A113004 Package Outlines 100-LEAD MQFP PACKAGE OUTLINE (FG) 0.913 (23.2) 70 0.787 (20.0) 51 0.063 (1.6) 71 50 100 31 0.551 (14.0) 0.677 (17.2) 0.063 (1.6) 1 30 0.0256 (0.65) 0.0118 ± 0.0031 (0.30 ± 0.08) 0.0346 ± 0.0059 (0.88 ± 0.15) 0.1063 ± 0.0079 (2.70 ± 0.20) 0.0067 ± 0.0024 (0.17 ± 0.06) 0.0111 ± 0.013 (2.825 ± 0.325) Note: Circle (e.g. B ) indicates JEDEC Reference. Doc. #: DSPD-100MQFPFG ©2004 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. Measurement Legend = Dimensions in Inches (Dimensions in Millimeters) A052104 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 222-8888 / FAX: (408) 222-4895 www.supertex.com