PD - 91270J
IRF7509
HEXFET® Power MOSFET
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Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
S1
G1
S2
G2
N-C HANNE L M O S F E T
1
8
2
7
3
6
4
5
D1
N-Ch
P-Ch
30V
-30V
D1
VDSS
D2
D2
P -C HANNE L M O S F E T
RDS(on) 0.11Ω 0.20Ω
T op V ie w
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is at
a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into
extremely thin application environments such as portable electronics and
PCMCIA cards.
M icro 8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
VGSM
dv/dt
TJ , TSTG
Drain-Source Voltage
Continuous Drain Current, VGS
Continuous Drain Current, VGS
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µS
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
N-Channel
30
2.7
2.1
21
Units
P-Channel
-30
-2.0
-1.6
-16
1.25
0.8
10
± 20
30
5.0
-55 to + 150
240 (1.6mm from case)
V
A
W
W
mW/°C
V
V
V/ns
°C
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambient
Max.
100
Units
°C/W
1
12/1/98
IRF7509
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
RDS(ON)
Static Drain-to-Source On-Resistance
P-Ch
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
I DSS
Drain-to-Source Leakage Current
I GSS
Gate-to-Source Forward Leakage
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
C iss
Input Capacitance
C oss
C rss
Output Capacitance
Reverse Transfer Capacitance
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
30
-30
—
—
—
—
—
—
1.0
-1.0
1.9
0.92
—
—
—
—
––
––
—
––
—
––
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max.
—
—
—
—
0.059 —
-0.039 —
0.09 0.110
0.14 0.175
0.17 0.20
0.30 0.40
—
—
—
—
—
—
—
—
— 1.0
— -1.0
—
25
— -25
— ±100
7.8 12
7.5 11
1.2 1.8
1.3 1.9
2.5 3.8
2.5 3.7
4.7 —
9.7 —
10
—
12
—
12
—
19
—
5.3 —
9.3 —
210 —
180 —
80
—
87
—
32
—
42
—
Units
V
V/°C
Ω
V
S
µA
Conditions
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 10V, ID = 1.7A
VGS = 4.5V, ID = 0.85A
VGS = -10V, ID =-1.2A
VGS = -4.5V, ID =-0.6A
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 10V, ID = 0.85A
VDS = -10V, ID = -0.6A
VDS = 24 V, VGS = 0V
VDS = -24V, VGS = 0V
VDS = 24 V, VGS = 0V, TJ = 125°C
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = ± 20V
N-Channel
ID = 1.7A, VDS = 24V, VGS = 10V
nC
P-Channel
ID = -1.2A, VDS = -24V, VGS = -10V
N-Channel
VDD = 15V, ID = 1.7A, RG = 6.1Ω,
RD = 8.7Ω
ns
P-Channel
VDD = -15V, ID = -1.2A, RG = 6.2Ω,
RD = 12Ω
pF
N-Channel
VGS = 0V, VDS = 25V, ƒ = 1.0MHz
P-Channel
VGS = 0V, VDS = -25V, ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
I SM
Pulsed Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min. Typ. Max. Units
Conditions
—
— 1.25
—
— -1.25 A
—
—
21
—
— -16
—
— 1.2
TJ = 25°C, IS = 1.7A, VGS = 0V
V
—
— -1.2
TJ = 25°C, IS = -1.8A, VGS = 0V
—
40
60
N-Channel
ns
—
30
45
TJ = 25°C, IF = 1.7A, di/dt = 100A/µs
—
48
72
P-Channel
nC
TJ = 25°C, IF = -1.2A, di/dt = -100A/µs
—
37
55
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 21 )
N-Channel ISD ≤ 1.7A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -1.2A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
2
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.
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IRF7509
N - Channel
100
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
I D , D rain-to-S ou rce C u rrent (A )
I D , Drain-to-S ource C urrent (A )
TOP
10
1
3.0V
20µ s P U LS E W ID TH
TJ = 25°C
A
0.1
0.1
1
10
3.0V
1
20µ s P U LS E W ID TH
TJ = 150°C
A
0.1
0.1
10
Fig 1. Typical Output Characteristics
100
I S D , R evers e D rain C urrent (A )
I D , D rain-to-S o urc e C urrent (A )
T J = 2 5 °C
10
T J = 1 5 0 °C
1
V DS = 10V
2 0 µ s P U L S E W ID T H
0.1
3.0
3.5
4.0
4.5
5.0
5.5
6.0
10
TJ = 150°C
T J = 25°C
1
VG S = 0V
0.1
A
0.4
V G S , G a te -to -S o u rce V o lta g e (V )
0.5
V G S = 10V
0.0
0
20
40
60
80
100
120
140
A
160
T J , J unc tion T em pe rature (°C )
Fig 5. Normalized On-Resistance
Vs. Temperature
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R DS (on) , Drain-to-Source On Resistance
1.0
-20
1.6
A
2.0
0.220
1.5
-40
1.2
Fig 4. Typical Source-Drain Diode
Forward Voltage
I D = 1.7A
-60
0.8
V S D , S ource-to-D rain Voltage (V)
Fig 3. Typical Transfer Characteristics
R D S(on) , Drain-to-S ource O n Resistance
(N orm alized)
10
Fig 2. Typical Output Characteristics
100
2.0
1
V D S, D rain-to-Source V oltage (V )
V D S , D rain-to-Sourc e Voltage (V )
0.180
VGS = 4.5V
0.140
0.100
VGS = 10V
0.060
0
2
4
6
8
10
I D , Drain Current (A)
Fig 6. Typical On-Resistance Vs. Drain
Current
3
IRF7509
N - Channel
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
0.120
I D , Drain Current (A)
R DS (on), Drain-to-Source On Resistance
0.140
ID = 2.7A
0.100
0.080
10us
10
100us
1ms
1
10ms
0.060
0
4
8
12
TC = 25 °C
TJ = 150 ° C
Single Pulse
0.1
16
1
10
VGS , Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
V GS =
C iss =
C rss =
C oss =
300
20
0V ,
f = 1M H z
C gs + C gd , C ds S H O R T E D
C gd
C ds + C gd
C iss
C oss
200
C rss
100
0
A
1
10
100
V D S , D rain-to-S ourc e V oltage (V )
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
4
Fig 8. Maximum Safe Operating Area
V G S , G ate-to-S ourc e V oltage (V )
C , C a p a c ita n c e (p F )
400
100
VDS , Drain-to-Source Voltage (V)
I D = 1.7A
V D S = 24V
V D S = 15V
16
12
8
4
FO R TE S T C IR C U IT
S E E FIG U R E 9
0
0
2
4
6
8
10
A
12
Q G , Total G ate C harge (nC )
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
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IRF7509
P - Channel
10
10
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
TOP
-I D , D rain-to-S ourc e C urrent (A )
-I D , D rain-to-S ourc e C urren t (A )
TOP
1
-3.0 V
20µ s P U LS E W ID TH
TJ = 25 °C
A
0.1
0.1
1
1
-3.0V
20µs P U LS E W ID TH
TJ = 150°C
A
0.1
0.1
10
Fig 11. Typical Output Characteristics
-I S D , R everse D rain C urrent (A )
-I D , D rain-to -S o urce C urre nt (A )
10
TJ = 2 5°C
TJ = 1 5 0 °C
1
V D S = -1 0 V
2 0 µ s P U L S E W ID T H
0.1
3.0
4.0
5.0
6.0
7.0
TJ = 150°C
TJ = 25°C
1
VG S = 0V
0.1
A
0.4
Fig 13. Typical Transfer Characteristics
1.0
0.5
VG S = -10V
0.0
-20
0
20
40
60
80
A
100 120 140 160
T J , J unc tion T em perature (°C )
Fig 15. Normalized On-Resistance
Vs. Temperature
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1.0
1.2
A
1.4
Fig 14. Typical Source-Drain Diode
Forward Voltage
RDS(on) , Drain-to-Source On Resistance ( Ω )
1.5
-40
0.8
1.5
I D = -1.2A
-60
0.6
-VS D , Sourc e-to-D rain Voltage (V )
-VG S , G a te -to -S ou rce V olta ge (V )
R D S (on) , D rain-to-S ourc e O n R esistance
(N orm alized)
10
Fig 12. Typical Output Characteristics
10
2.0
1
-V D S , D rain-to-S ource Voltage (V )
-V D S , D rain-to-S ourc e V oltage (V )
1.0
VGS = -4.5V
0.5
VGS = -10V
0.0
A
0
1
2
-I
3
4
D , Drain Current (A)
Fig 16. Typical On-Resistance Vs. Drain
Current
5
IRF7509
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
0.50
-IID , Drain Current (A)
RDS(on) , Drain-to-Source On Resistance ( Ω )
P - Channel
0.60
0.40
I
= -2.0A
0.30
100us
1ms
1
10ms
0.20
0.10
6
GS
-V
9
12
1
15
20
0V,
f = 1M H z
C gs + C gd , Cd s S H O R TE D
C gd
C ds + C gd
300
C is s
C oss
200
C rs s
0
10
I D = -1 .2A
V DS = -2 4V
V DS = -1 5V
16
12
8
4
F O R T E S T C IR C U IT
S E E FIG U R E 9
0
A
1
100
Fig 18. Maximum Safe Operating Area
-V G S , G a te-to -S ou rc e V o lta g e (V )
V GS =
C is s =
C rs s =
C os s =
100
10
-VDS , Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
Fig 17. Typical On-Resistance Vs. Gate
Voltage
400
TC = 25 ° C
TJ = 150 ° C
Single Pulse
0.1
A
3
C , C a pac itanc e (pF )
10us
10
0
100
2
4
6
8
10
A
12
Q G , Total G ate C harge (nC )
-V D S , D rain-to-S ourc e V oltage (V )
Fig 20. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 19. Typical Capacitance Vs.
Drain-to-Source Voltage
N-P - Channel
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
10
0.10
0.05
P DM
0.02
0.01
t1
1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 21. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6
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IRF7509
Package Outline
Micro8 Outline
Dimensions are shown in millimeters (inches)
LE AD A S S IG N M EN T S
IN C H ES
D IM
D
M ILLIM E TE R S
M IN
M AX
M IN
A
.0 36
.0 44
0 .9 1
1 .11
A1
.0 04
.0 08
0 .1 0
0 .20
B
.0 10
.0 14
0 .2 5
0 .36
C
.005
.0 07
0 .13
0.18
D
.116
.1 20
2 .95
3.05
e
.0 256 B A SIC
0 .65 BA S IC
e1
.0 128 B A SIC
0 .33 BA S IC
E
.1 16
.1 20
2.9 5
3 .0 5
H
.188
.1 98
4 .78
5.03
e
L
.0 16
.026
0 .4 1
0 .66
6X
θ
0°
6°
0°
6°
3
-B-
D D D D
D 1 D1 D 2 D 2
8 7 6 5
8 7 6 5
S IN G LE
D U AL
8 7 6 5
3
H
E
0.25 (.010)
-A-
M
A
M
1 2 3 4
1 2 3 4
S S S G
S1 G 1 S2 G 2
1 2 3 4
MAX
e1
R E C O M M E ND E D FO O T P RIN T
θ
1.04
( .041 )
8X
A
-C B
0.10 (.004)
A1
8X
0.08 (.003)
M
C A S
L
8X
B S
0.38
8X
( .015 )
C
8X
3.20
( .126 )
4.24
5.28
( .167 ) ( .208 )
NO TES :
1 D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 .
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
0.65 6X
( .0256 )
3 D IM E N S IO N S D O N O T IN C L U D E M O L D F L A S H .
Part Marking Information
Micro8
A
D A T E C O D E (YW W )
Y = LA S T D IG IT O F YE A R
W W = W EE K
E X AM PLE : T H IS IS A N IR F 7501
451
7501
PART NUMBER
TO P
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7
IRF7509
Tape & Reel Information
Micro8
Dimensions are shown in millimeters (inches)
T ER M IN A L N U M B E R 1
12 .3 ( .4 8 4 )
11 .7 ( .4 6 1 )
8 .1 ( .31 8 )
7 .9 ( .31 2 )
F E E D D IR E C T IO N
N O TE S :
1 . O U TL IN E C O N FO R M S T O E IA -4 8 1 & E IA -54 1 .
2 . C O N T R O L L IN G D IM E N SIO N : M IL L IM ET E R .
33 0.00
(1 2 .9 9 2 )
M AX.
1 4 .4 0 ( .5 6 6 )
1 2 .4 0 ( .4 8 8 )
NO TES :
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice.
12/98
8
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