BF1208 Dual N-channel dual gate MOSFET Rev. 01 — 16 March 2005 Product data sheet 1. Product profile 1.1 General description The BF1208 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1 bias of amplifier B. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during Automatic Gain Control (AGC). Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT666 micro-miniature plastic package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. MSC895 1.2 Features ■ Two low noise gain controlled amplifiers in a single package. One with a fully integrated bias and one with a partly integrated bias ■ Internal switch to save external components ■ Superior cross-modulation performance during AGC ■ High forward transfer admittance ■ High forward transfer admittance to input capacitance ratio 1.3 Applications ■ Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage ◆ digital and analog television tuners ◆ professional communication equipment BF1208 Philips Semiconductors Dual N-channel dual gate MOSFET 1.4 Quick reference data Table 1: Quick reference data Per MOSFET unless otherwise specified. Symbol Parameter Conditions VDS drain-source voltage (DC) ID drain current (DC) Ptot total power dissipation Tsp ≤ 109 °C |yfs| forward transfer admittance f = 1 MHz Ciss(G1) input capacitance at gate1 Min Typ Max Unit - - 6 V - - 30 mA - - 180 mW amplifier A; ID = 19 mA 26 31 41 mS amplifier B; ID = 13 mA 28 33 43 mS amplifier A - 2.2 2.7 pF amplifier B - 2.0 2.5 pF [1] f = 1 MHz Crss reverse transfer capacitance f = 1 MHz - 20 - fF NF noise figure amplifier A; f = 400 MHz - 1.3 1.9 dB amplifier B; f = 800 MHz - 1.4 2.1 dB amplifier A 100 105 - dBµV amplifier B 100 103 - dBµV - - 150 °C Xmod input level for k = 1 % at 40 dB AGC junction temperature Tj [1] cross-modulation Tsp is the temperature at the soldering point of the source lead. 2. Pinning information Table 2: Discrete pinning Pin Description 1 gate1 (AMP A) 2 gate2 3 gate1 (AMP B) 4 drain (AMP B) 5 source 6 Simplified outline 6 5 Symbol 4 AMP A G1A DA G2 drain (AMP A) 1 2 S 3 G1B DB AMP B sym089 9397 750 14254 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 16 March 2005 2 of 22 BF1208 Philips Semiconductors Dual N-channel dual gate MOSFET 3. Ordering information Table 3: Ordering information Type number BF1208 Package Name Description Version - plastic surface mounted package; 6 leads SOT666 4. Marking Table 4: Marking codes Type number Marking code BF1208 2L 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per MOSFET VDS drain-source voltage (DC) - 6 V ID drain current (DC) - 30 mA IG1 gate1 current - ±10 mA IG2 gate2 current Ptot total power dissipation Tstg Tj [1] - ±10 mA - 180 mW storage temperature −65 +150 °C junction temperature - 150 °C Tsp ≤ 109 °C [1] Tsp is the temperature at the soldering point of the source lead. 001aac193 250 Ptot (mW) 200 150 100 50 0 0 50 100 150 200 Tsp (˚C) Fig 1. Power derating curve 9397 750 14254 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 16 March 2005 3 of 22 BF1208 Philips Semiconductors Dual N-channel dual gate MOSFET 6. Thermal characteristics Table 6: Thermal characteristics Symbol Parameter Conditions Rth(j-sp) thermal resistance from junction to solder point Typ Unit 225 K/W 7. Static characteristics Table 7: Static characteristics Tj = 25 °C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit amplifier A 6 - - V amplifier B 6 - - V Per MOSFET; unless otherwise specified V(BR)DSS drain-source breakdown voltage VG1-S = VG2-S = 0 V; ID = 10 µA V(BR)G1-SS gate1-source breakdown voltage VG2-S = VDS = 0 V; IG1-S = 10 mA 6 - 10 V V(BR)G2-SS gate2-source breakdown voltage VG1-S = VDS = 0 V; IG2-S = 10 mA 6 - 10 V VF(S-G1) forward source-gate1 voltage VG2-S = VDS = 0 V; IS-G1 = 10 mA 0.5 - 1.5 V VF(S-G2) forward source-gate2 voltage VG1-S = VDS = 0 V; IS-G2 = 10 mA 0.5 - 1.5 V VG1-S(th) gate1-source threshold voltage VDS = 5 V; VG2-S = 4 V; ID = 100 µA 0.3 - 1.0 V VG2-S(th) gate2-source threshold voltage VDS = 5 V; VG1-S = 5 V; ID = 100 µA 0.4 - 1.0 V IDSX drain-source current VG2-S = 4 V; VDS(B) = 5 V; RG1 = 150 kΩ IG1-S IG2-S gate1 cut-off current gate2 cut-off current amplifier A; VDS(A) = 5 V [1] 14 - 24 mA amplifier B; VDS(B) = 5 V [2] 9 - 17 mA amplifier A; VG1-S(A) = 5 V; ID(B) = 0 A - - 50 nA amplifier B; VG1-S(B) = 5 V; VDS(B) = 0 V - - 50 nA - - 20 nA VG2-S = VDS(A) = 0 V VG2-S = 4 V; VG1-S(B) = 0 V; VG1-S(A) = VDS(A) = VDS(B) = 0 V [1] RG1 connects gate1 (B) to VGG = 0 V (see Figure 3). [2] RG1 connects gate1 (B) to VGG = 5 V (see Figure 3). 9397 750 14254 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 16 March 2005 4 of 22 BF1208 Philips Semiconductors Dual N-channel dual gate MOSFET 001aaa552 20 ID (mA) 16 G1A (1) DA (2) 12 G2 S (3) G1B 8 DB RG1 (4) VGG 4 (6) 001aac205 (5) 0 0 1 2 3 4 5 VGG (V) (1) ID(B); RG1 = 120 kΩ. VGG = 5 V: amplifier A is off; amplifier B is on. (2) ID(B); RG1 = 150 kΩ. VGG = 0 V: amplifier A is on; amplifier B is off. (3) ID(B); RG1 = 180 kΩ. (4) ID(A); RG1 = 180 kΩ. (5) ID(A); RG1 = 150 kΩ. (6) ID(A); RG1 = 120 kΩ. Fig 2. Drain currents of MOSFET A and B as a function of gate1 supply voltage Fig 3. Functional diagram 8. Dynamic characteristics 8.1 Dynamic characteristics for amplifier A Table 8: Dynamic characteristics for amplifier A [1] Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 19 mA; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit |yfs| forward transfer admittance Tj = 25 °C 26 31 41 mS Ciss(G1) input capacitance at gate1 f = 1 MHz - 2.2 2.7 pF Ciss(G2) input capacitance at gate2 f = 1 MHz - 3.0 - pF Coss output capacitance f = 1 MHz - 0.9 - pF Crss reverse transfer capacitance f = 1 MHz - 20 - fF Gtr power gain BS = BS(opt); BL = BL(opt) f = 200 MHz; GS = 2 mS; GL = 0.5 mS 32 36 40 dB f = 400 MHz; GS = 2 mS; GL = 1 mS 28 32 36 dB f = 800 MHz; GS = 3.3 mS; GL = 1 mS 23 27 32 dB NF noise figure f = 11 MHz; GS = 20 mS; BS = 0 S - 3.0 - dB f = 400 MHz; YS = YS(opt) - 1.3 1.9 dB f = 800 MHz; YS = YS(opt) - 1.4 2.1 dB 9397 750 14254 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 16 March 2005 5 of 22 BF1208 Philips Semiconductors Dual N-channel dual gate MOSFET Table 8: Dynamic characteristics for amplifier A [1] …continued Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 19 mA; unless otherwise specified. Symbol Parameter Xmod Conditions cross-modulation Min Typ Max Unit at 0 dB AGC 90 - - dBµV at 10 dB AGC - 90 - dBµV at 20 dB AGC - 99 - dBµV at 40 dB AGC 100 105 - dBµV [2] input level for k = 1 %; fw = 50 MHz; funw = 60 MHz [1] For the MOSFET not in use: VG1-S(B) = 0 V; VDS(B) = 0 V. [2] Measured in Figure 33 test circuit. 8.1.1 Graphics for amplifier A 001aaa554 30 001aaa555 32 (1) ID (mA) (2) ID (mA) (3) (1) (2) (4) 24 (3) 20 (4) (5) 16 (5) (6) 10 (7) (6) 8 (8) (9) (7) 0 0 0 0.4 0.8 1.2 1.6 2 VG1-S (V) 0 4 6 VDS (V) (1) VG2-S = 4 V. (1) VG1-S(A) = 1.8 V. (2) VG2-S = 3.5 V. (2) VG1-S(A) = 1.7 V. (3) VG2-S = 3 V. (3) VG1-S(A) = 1.6 V. (4) VG2-S = 2.5 V. (4) VG1-S(A) = 1.5 V. (5) VG2-S = 2 V. (5) VG1-S(A) = 1.4 V. (6) VG2-S = 1.5 V. (6) VG1-S(A) = 1.3 V. (7) VG2-S = 1 V. (7) VG1-S(A) = 1.2 V. VDS(A) = 5 V; VG1-S(B) = VDS(B) = 0 V; Tj = 25 °C. 2 (8) VG1-S(A) = 1.1 V. (9) VG1-S(A) = 1 V. VG2-S = 4 V; VG1-S(B) = VDS(B) = 0 V; Tj = 25 °C. Fig 4. Amplifier A: transfer characteristics; typical values Fig 5. Amplifier A: output characteristics; typical values 9397 750 14254 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 16 March 2005 6 of 22 BF1208 Philips Semiconductors Dual N-channel dual gate MOSFET 001aaa556 40 yfs (mS) ID(A) (mA) 16 (1) (2) 30 001aac206 20 12 20 (3) 8 (4) 10 4 (5) (6) 0 0 0 8 16 24 32 0 (1) VG2-S = 4 V. 20 40 60 ID(B) (µA) ID (mA) VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = 5 V; VG1-S(B) = 0 V; Tj = 25 °C. (2) VG2-S = 3.5 V. ID(B) = internal G1 current = current in pin drain (B) if MOSFET (B) is switched off. (3) VG2-S = 3 V. (4) VG2-S = 2.5 V. (5) VG2-S = 2 V. (6) VG2-S = 1.5 V. VDS(A) = 5 V; VG1-S(B) = VDS(B) = 0 V; Tj = 25 °C. Fig 6. Amplifier A: forward transfer admittance as a function of drain current; typical values Fig 7. Amplifier A: drain current as a function of internal G1 current; typical values 9397 750 14254 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 16 March 2005 7 of 22 BF1208 Philips Semiconductors Dual N-channel dual gate MOSFET 001aaa558 20 ID (mA) 16 001aaa559 32 ID (mA) 24 (1) 12 (2) (3) 16 (4) (5) 8 (6) 8 4 0 0 0 1 2 3 4 5 Vsupply (V) VDS(A) = VDS(B) = Vsupply; VG2-S = 4 V; Tj = 25 °C; RG1 = 150 kΩ (connected to ground); see Figure 3. 0 2 4 6 VG2-S (V) (1) VDS(B) = 5 V. (2) VDS(B) = 4.5 V. (3) VDS(B) = 4 V. (4) VDS(B) = 3.5 V. (5) VDS(B) = 3 V. (6) VDS(B) = 2.5 V. VDS(A) = 5 V; VG1-S(B) = 0 V; gate1 (A) = open; Tj = 25 °C. Fig 8. Amplifier A: drain current of amplifier A as a function of supply voltage of A and B amplifier; typical values 001aac195 120 Vunw (dBµV) Fig 9. Amplifier A: drain current as a function of gate2 voltage; typical values 001aac196 0 gain reduction (dB) 10 110 20 100 30 90 40 80 50 0 10 20 30 40 50 gain reduction (dB) VDS(A) = VDS(B) = 5 V; VG1-S(B) = 0 V; fw = 50 MHz; funw = 60 MHz; Tamb = 25 °C; see Figure 33. Fig 10. Amplifier A: unwanted voltage for 1 % cross-modulation as a function of gain reduction; typical values 0 2 3 4 VAGC (V) VDS(A) = VDS(B) = 5 V; VG1-S(B) = 0 V; f = 50 MHz; see Figure 33. Fig 11. Amplifier A: gain reduction as a function of AGC voltage; typical values 9397 750 14254 Product data sheet 1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 16 March 2005 8 of 22 BF1208 Philips Semiconductors Dual N-channel dual gate MOSFET 001aac197 28 001aac566 102 bis, gis (mS) ID (mA) 10 20 bis 1 12 gis 10−1 10−2 4 0 10 20 30 40 50 gain reduction (dB) 10 VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V; ID(A) = 19 mA Fig 12. Amplifier A: drain current as a function of gain reduction; typical values 001aac567 −102 |yfs| |yfs| (mS) 103 f (MHz) VDS(A) = VDS(B) = 5 V; VG1-S(B) = 0 V; f = 50 MHz; Tamb = 25 °C; see Figure 33. 102 102 ϕfs (deg) Fig 13. Amplifier A: input admittance as a function of frequency; typical values 001aac568 103 −103 ϕrs (deg) |yrs| (µS) ϕrs 102 −102 −10 10 ϕfs |yrs| −10 10 1 10 −1 103 102 1 10 f (MHz) 102 103 −1 f (MHz) VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V; ID(A) = 19 mA VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V; ID(A) = 19 mA Fig 14. Amplifier A: forward transfer admittance and phase as a function of frequency; typical values Fig 15. Amplifier A: reverse transfer admittance and phase as a function of frequency; typical values 9397 750 14254 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 16 March 2005 9 of 22 BF1208 Philips Semiconductors Dual N-channel dual gate MOSFET 001aac569 10 bos, gos (mS) bos 1 gos 10−1 10−2 102 10 103 f (MHz) VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V; ID(A) = 19 mA Fig 16. Amplifier A: output admittance as a function of frequency; typical values 8.1.2 Scattering parameters for amplifier A Table 9: Scattering parameters for amplifier A VDS(A) = 5 V; VG2-S = 4 V; ID(A) = 19 mA; VDS(B) = 0 V; VG1-S(B) = 0 V; Tamb = 25 °C; typical values. f (MHz) s11 Magnitude (ratio) Angle (deg) s21 Magnitude (ratio) Angle (deg) s12 50 0.991 −3.86 3.08 100 0.990 −7.73 200 0.986 300 0.980 400 s22 Magnitude (ratio) Angle (deg) Magnitude (ratio) Angle (deg) 175.91 0.0009 77.41 0.992 −1.41 3.03 171.76 0.0019 78.10 0.991 −2.81 −15.43 2.99 163.68 0.0037 78.39 0.990 −5.57 −22.98 2.94 155.54 0.0054 73.53 0.989 −8.34 0.970 −30.44 2.89 147.55 0.0070 68.74 0.986 −11.08 500 0.960 −37.60 2.82 139.76 0.0085 63.64 0.983 −13.78 600 0.948 −44.62 2.75 132.16 0.0098 59.62 0.980 −16.45 700 0.935 −51.44 2.67 124.70 0.0110 55.09 0.977 −19.10 800 0.921 −58.04 2.58 117.39 0.0120 50.79 0.973 −21.69 900 0.908 −64.41 2.50 110.20 0.0128 46.62 0.970 −24.28 1000 0.894 −70.49 2.40 103.31 0.0135 42.78 0.967 −26.87 8.1.3 Noise data for amplifier A Table 10: Noise data for amplifier A VDS(A) = 5 V; VG2-S = 4 V; ID(A) = 19 mA; VDS(B) = 0 V; VG1-S(B) = 0 V; Tamb = 25 °C; typical values; unless otherwise specified. f (MHz) NFmin (dB) Γopt ratio (deg) 400 1.3 0.718 16.06 0.683 800 1.4 0.677 37.59 0.681 9397 750 14254 Product data sheet rn (Ω) © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 16 March 2005 10 of 22 BF1208 Philips Semiconductors Dual N-channel dual gate MOSFET 8.2 Dynamic characteristics for amplifier B Table 11: Dynamic characteristics for amplifier B [1] Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 13 mA; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit |yfs| forward transfer admittance Tj = 25 °C 28 33 43 mS Ciss(G1) input capacitance at gate1 f = 1 MHz - 2.0 2.5 pF Ciss(G2) input capacitance at gate2 f = 1 MHz - 3.4 - pF Coss output capacitance f = 1 MHz - 0.85 - pF Crss reverse transfer capacitance f = 1 MHz - 20 - fF Gtr power gain BS = BS(opt); BL = BL(opt) f = 200 MHz; GS = 2 mS; GL = 0.5 mS 33 37 41 dB f = 400 MHz; GS = 2 mS; GL = 1 mS 30 34 38 dB f = 800 MHz; GS = 3.3 mS; GL = 1 mS 29 33 37 dB f = 11 MHz; GS = 20 mS; BS = 0 S - 5 - dB f = 400 MHz; YS = YS(opt) - 1.3 1.9 dB - 1.4 2.1 dB at 0 dB AGC 90 - - dBµV at 10 dB AGC - 88 - dBµV at 20 dB AGC - 94 - dBµV at 40 dB AGC 100 103 - dBµV NF noise figure f = 800 MHz; YS = YS(opt) Xmod cross-modulation input level for k = 1 %; fw = 50 MHz; funw = 60 MHz [1] For the MOSFET not in use: VG1-S(A) = 0 V; VDS(A) = 0 V. [2] Measured in Figure 34 test circuit. 9397 750 14254 Product data sheet [2] © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 16 March 2005 11 of 22 BF1208 Philips Semiconductors Dual N-channel dual gate MOSFET 8.2.1 Graphics for amplifier B 001aaa568 (1) (4) 30 ID (mA) (2) ID (mA) 001aaa569 32 (1) (3) 24 (2) (5) 20 (3) (4) 16 (5) (6) 10 (6) 8 (7) (7) 0 0 0 0.4 0.8 1.2 1.6 2 VG1-S (V) 0 (1) VG1-S(B) = 1.6 V. (2) VG2-S = 3.5 V. (2) VG1-S(B) = 1.5 V. (3) VG2-S = 3 V. (3) VG1-S(B) = 1.4 V. (4) VG2-S = 2.5 V. (4) VG1-S(B) = 1.3 V. (5) VG2-S = 2 V. (5) VG1-S(B) = 1.2 V. (6) VG2-S = 1.5 V. (6) VG1-S(B) = 1.1 V. (7) VG2-S = 1 V. (7) VG1-S(B) = 1 V. Fig 17. Amplifier B: transfer characteristics; typical values 6 VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 °C. Fig 18. Amplifier B: output characteristics; typical values 9397 750 14254 Product data sheet 4 VDS (V) (1) VG2-S = 4 V. VDS(B) = 5 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 °C. 2 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 16 March 2005 12 of 22 BF1208 Philips Semiconductors Dual N-channel dual gate MOSFET 001aaa570 100 (1) IG1 (µA) 80 (2) 001aaa571 (1) (2) 40 yfs (mS) (3) (3) 30 (4) (4) 60 20 40 (5) (5) 10 20 (6) (6) (7) (7) 0 0 0 0.4 0.8 1.2 0 1.6 2 VG1-S (V) 8 (1) VG2-S = 4 V. (2) VG2-S = 3.5 V. (2) VG2-S = 3.5 V. (3) VG2-S = 3 V. (3) VG2-S = 3 V. (4) VG2-S = 2.5 V. (4) VG2-S = 2.5 V. (5) VG2-S = 2 V. (5) VG2-S = 2 V. (6) VG2-S = 1.5 V. (6) VG2-S = 1.5 V. (7) VG2-S = 1 V. (7) VG2-S = 1 V. VDS(B) = 5 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 °C. 001aaa572 24 24 32 ID (mA) (1) VG2-S = 4 V. Fig 19. Amplifier B: gate1 current as a function of gate1 voltage; typical values 16 VDS(B) = 5 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 °C. Fig 20. Amplifier B: forward transfer admittance as a function of drain current; typical values 001aaa573 16 ID (mA) ID (mA) 12 16 8 8 4 0 0 10 20 30 40 50 IG1 (µA) VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 °C. Fig 21. Amplifier B: drain current as a function of gate1 current; typical values 0 0 2 3 4 5 VGG (V) VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 °C; RG1 = 150 kΩ (connected to VGG); see Figure 3. Fig 22. Amplifier B: drain current as a function of gate1 supply voltage; typical values 9397 750 14254 Product data sheet 1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 16 March 2005 13 of 22 BF1208 Philips Semiconductors Dual N-channel dual gate MOSFET 001aaa574 24 001aaa575 16 (1) ID (mA) (1) ID (mA) (2) (3) (2) 12 (4) (3) 16 (5) (4) (5) 8 (6) (7) (8) 8 4 0 0 0 2 4 VGG = VDS (V) 6 0 2 4 6 VG2-S (V) (1) RG1 = 68 kΩ. (1) VGG = 5.0 V. (2) RG1 = 82 kΩ. (2) VGG = 4.5 V. (3) RG1 = 100 kΩ. (3) VGG = 4.0 V. (4) RG1 = 120 kΩ. (4) VGG = 3.5 V. (5) RG1 = 150 kΩ. (5) VGG = 3.0 V. VDS(B) = 5 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 °C; RG1 = 150 kΩ (connected to VGG); see Figure 3. (6) RG1 = 180 kΩ. (7) RG1 = 220 kΩ. (8) RG1 = 270 kΩ. VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 °C; RG1 is connected to VGG; see Figure 3. Fig 23. Amplifier B: drain current as a function of gate1 supply voltage and drain supply voltage; typical values Fig 24. Amplifier B: drain current as a function of gate2 voltage; typical values 9397 750 14254 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 16 March 2005 14 of 22 BF1208 Philips Semiconductors Dual N-channel dual gate MOSFET 001aaa576 30 Vunw (dBµV) (1) IG1 (µA) (2) 20 001aac198 120 110 (3) (4) 100 (5) 10 90 0 80 0 2 4 6 0 20 40 60 gain reduction (dB) VG2-S (V) (1) VGG = 5.0 V. VDS(B) = 5 V; VGG = 5 V; VDS(A) = VG1-S(A) = 0 V; RG1 = 150 kΩ (connected to VGG); fw = 50 MHz; funw = 60 MHz; Tamb = 25 °C; see Figure 34. (2) VGG = 4.5 V. (3) VGG = 4.0 V. (4) VGG = 3.5 V. (5) VGG = 3.0 V. VDS(B) = 5 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 °C; RG1 = 150 kΩ (connected to VGG); see Figure 3. Fig 25. Amplifier B: gate1 current as a function of gate2 voltage; typical values 001aac199 0 gain reduction (dB) 10 Fig 26. Amplifier B: unwanted voltage for 1 % cross-modulation as a function of gain reduction; typical values 001aac200 16 ID (mA) 12 20 8 30 4 40 0 50 0 1 2 3 4 0 VAGC (V) VDS(B) = 5 V; VGG = 5 V; VDS(A) = VG1-S(A) = 0 V; RG1 = 150 kΩ (connected to VGG); f = 50 MHz; Tamb = 25 °C; see Figure 34. Fig 27. Amplifier B: gain reduction as a function of AGC voltage; typical values 20 30 40 50 gain reduction (dB) VDS(B) = 5 V; VGG = 5 V; VDS(A) = VG1-S(A) = 0 V; RG1 = 150 kΩ (connected to VGG); f = 50 MHz; Tamb = 25 °C; see Figure 34. Fig 28. Amplifier B: drain current as a function of gain reduction; typical values 9397 750 14254 Product data sheet 10 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 16 March 2005 15 of 22 BF1208 Philips Semiconductors Dual N-channel dual gate MOSFET 001aac570 102 001aac571 102 bis, gis (mS) |yfs| |yfs| (mS) 10 −102 ϕfs (deg) bis 1 −10 10 ϕfs gis 10−1 10−2 10 102 1 103 10 −1 103 102 f (MHz) f (MHz) VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V; ID(B) = 13 mA VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V; ID(B) = 13 mA Fig 29. Amplifier B: input admittance as a function of frequency; typical values 001aac572 103 −103 ϕrs (deg) |yrs| (µS) ϕrs 102 −102 Fig 30. Amplifier B: forward transfer admittance and phase as a function of frequency; typical values 001aac573 10 bos, gos (mS) bos 1 |yrs| gos 10 1 10 102 103 −10 10−1 −1 10−2 10 102 103 f (MHz) f (MHz) VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V; ID(B) = 13 mA VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V; ID(B) = 13 mA Fig 31. Amplifier B: reverse transfer admittance and phase as a function of frequency; typical values Fig 32. Amplifier B: output admittance as a function of frequency; typical values 9397 750 14254 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 16 March 2005 16 of 22 BF1208 Philips Semiconductors Dual N-channel dual gate MOSFET 8.2.2 Scattering parameters for amplifier B Table 12: Scattering parameters for amplifier B VDS(B) = 5 V; VG2-S = 4 V; ID(B) = 13 mA; VDS(A) = 0 V; VG1-S(A) = 0 V; Tamb = 25 °C; typical values. f (MHz) s11 s21 s12 Magnitude (ratio) Angle (deg) Magnitude (ratio) Angle (deg) 50 0.985 −3.42 3.33 100 0.984 −6.96 200 300 s22 Magnitude (ratio) Angle (deg) Magnitude (ratio) Angle (deg) 176.41 0.0010 87.55 0.988 −1.60 3.31 172.70 0.0020 83.45 0.988 −3.16 0.980 −13.51 3.27 165.59 0.0039 82.84 0.987 −6.31 0.975 −20.07 3.23 158.42 0.0054 82.01 0.986 −9.40 400 0.969 −26.61 3.19 151.34 0.0068 79.73 0.984 −12.46 500 0.961 −32.89 3.14 144.33 0.0085 77.91 0.982 −15.57 600 0.955 −39.19 3.07 137.54 0.0100 76.31 0.980 −18.62 700 0.945 −45.39 3.00 130.72 0.0115 73.76 0.977 −21.70 800 0.938 −51.39 2.93 123.98 0.0131 71.58 0.974 −24.76 900 0.930 −57.36 2.85 117.31 0.0145 69.18 0.971 −27.81 1000 0.920 −63.10 2.77 110.39 0.0157 67.54 0.967 −30.86 8.2.3 Noise data for amplifier B Table 13: Noise data for amplifier B VDS(B) = 5 V; VG2-S = 4 V; ID(B) = 13 mA; VDS(A) = 0 V; VG1-S(A) = 0 V; Tamb = 25 °C; typical values; unless otherwise specified. f (MHz) NFmin (dB) Γopt ratio (deg) 400 1.3 0.695 13.11 0.694 800 1.4 0.674 32.77 0.674 9397 750 14254 Product data sheet rn (Ω) © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 16 March 2005 17 of 22 BF1208 Philips Semiconductors Dual N-channel dual gate MOSFET 9. Test information VDS(A) VAGC 5V 4.7 nF 10 kΩ 4.7 nF RGEN 50 Ω G2 4.7 nF Vi RL 50 Ω S BF1208 G1B 50 Ω 4.7 nF DA G1A 4.7 nF 50 Ω L1 2.2 µH DB L2 2.2 µH RG1 4.7 nF VGG VDS(B) 0V 5V 001aac201 Fig 33. Cross-modulation test set-up for amplifier A VDS(A) VAGC 5V 4.7 nF 10 kΩ 4.7 nF 50 Ω DA G1A 4.7 nF G2 4.7 nF RGEN 50 Ω L1 2.2 µH BF1208 G1B 50 Ω S 4.7 nF DB L2 2.2 µH RG1 RL 50 Ω 4.7 nF Vi VGG 5V VDS(B) 5V 001aac202 Fig 34. Cross-modulation test set-up for amplifier B 9397 750 14254 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 16 March 2005 18 of 22 BF1208 Philips Semiconductors Dual N-channel dual gate MOSFET 10. Package outline Plastic surface mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 01-08-27 04-11-08 SOT666 Fig 35. Package outline SOT666 9397 750 14254 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 16 March 2005 19 of 22 BF1208 Philips Semiconductors Dual N-channel dual gate MOSFET 11. Revision history Table 14: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes BF1208_1 20050316 Product data sheet - 9397 750 14254 - 9397 750 14254 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 16 March 2005 20 of 22 BF1208 Philips Semiconductors Dual N-channel dual gate MOSFET 12. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. Definitions 14. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 15. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 14254 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 16 March 2005 21 of 22 BF1208 Philips Semiconductors Dual N-channel dual gate MOSFET 16. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 8.1.1 8.1.2 8.1.3 8.2 8.2.1 8.2.2 8.2.3 9 10 11 12 13 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4 Dynamic characteristics . . . . . . . . . . . . . . . . . . 5 Dynamic characteristics for amplifier A. . . . . . . 5 Graphics for amplifier A . . . . . . . . . . . . . . . . . . 6 Scattering parameters for amplifier A . . . . . . . 10 Noise data for amplifier A . . . . . . . . . . . . . . . . 10 Dynamic characteristics for amplifier B. . . . . . 11 Graphics for amplifier B . . . . . . . . . . . . . . . . . 12 Scattering parameters for amplifier B . . . . . . . 17 Noise data for amplifier B . . . . . . . . . . . . . . . . 17 Test information . . . . . . . . . . . . . . . . . . . . . . . . 18 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 19 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 20 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 21 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Contact information . . . . . . . . . . . . . . . . . . . . 21 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 16 March 2005 Document number: 9397 750 14254 Published in The Netherlands