PHILIPS BF1204

DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
MBD128
BF1204
Dual N-channel dual gate
MOS-FET
Product specification
Supersedes data of 2000 Nov 13
2001 Apr 25
Philips Semiconductors
Product specification
Dual N-channel dual gate MOS-FET
FEATURES
BF1204
PINNING - SOT363
• Two low noise gain controlled amplifiers in a single
package
PIN
• Superior cross-modulation performance during AGC
• High forward transfer admittance
• High forward transfer admittance to input capacitance
ratio.
APPLICATIONS
• Gain controlled low noise amplifiers for VHF and UHF
applications with 3 to 9 V supply voltage, such as digital
and analog television tuners and professional
communications equipment.
DESCRIPTION
1
gate 1 (a)
2
gate 2
3
gate 1 (b)
4
drain (b)
5
source
6
drain (a)
handbook, halfpage
6
5
d (a)
4
DESCRIPTION
s
d (b)
AMP
a
The BF1204 is a combination of two equal dual gate
MOS-FET amplifiers with shared source and gate 2 leads.
The source and substrate are interconnected. Internal bias
circuits enable DC stabilization and a very good
cross-modulation performance during AGC. Integrated
diodes between the gates and source protect against
excessive input voltage surges. The transistor has a
SOT363 micro-miniature plastic package.
1
2
3
g1 (a)
AMP
b
g2
g1 (b)
Top view
MBL252
Marking code: L3-
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per MOS-FET; unless otherwise specified
−
−
VDS
drain-source voltage
ID
drain current (DC)
−
−
30
mA
Ptot
total power dissipation
Ts ≤ 102 °C; note 1
−
−
200
mW
yfs
forward transfer admittance
ID = 12 mA; f = 1 MHz
25
30
40
mS
Cig1-s
input capacitance at gate 1
ID = 12 mA; f = 1 MHz
−
1.7
2.2
pF
Crss
reverse transfer capacitance
f = 1 MHz
−
15
−
fF
NF
noise figure
f = 800 MHz
−
1.1
1.8
dB
Xmod
cross-modulation
input level for k = 1% at 40 dB AGC 100
105
−
dBµV
Tj
operating junction temperature
−
150
°C
−
10
V
Note
1. Ts is the temperature at the soldering point of the source lead.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2001 Apr 25
2
Philips Semiconductors
Product specification
Dual N-channel dual gate MOS-FET
BF1204
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per MOS-FET; unless otherwise specified
VDS
drain-source voltage
−
10
ID
drain current (DC)
−
30
mA
IG1
gate 1 current
−
±10
mA
IG2
gate 2 current
−
±10
mA
Ts ≤ 102 °C
V
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
150
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to soldering point
Rth j-s
MGS359
250
handbook, halfpage
Ptot
(mW)
200
150
100
50
0
0
50
100
150
Ts (°C)
200
Fig.2 Power derating curve.
2001 Apr 25
3
VALUE
UNIT
240
K/W
Philips Semiconductors
Product specification
Dual N-channel dual gate MOS-FET
BF1204
STATIC CHARACTERISTICS
Tj = 25 °C; per MOS-FET; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
UNIT
10
−
V
V(BR)G1-SS gate-source breakdown voltage VGS = VDS = 0; IG1-S = 10 mA
6
10
V
V(BR)G2-SS gate-source breakdown voltage VGS = VDS = 0; IG2-S = 10 mA
6
10
V
V(BR)DSS
drain-source breakdown voltage VG1-S = VG2-S = 0; ID = 10 µA
MAX.
V(F)S-G1
forward source-gate voltage
VG2-S = VDS = 0; IS-G1 = 10 mA
0.5
1.5
V
V(F)S-G2
forward source-gate voltage
VG1-S = VDS = 0; IS-G2 = 10 mA
0.5
1.5
V
VG1-S(th)
gate-source threshold voltage
VDS = 5 V; VG2-S = 4 V; ID = 100 µA
0.3
1
V
VG2-S(th)
gate-source threshold voltage
VDS = 5 V; VG1-S = 4 V; ID = 100 µA
0.3
1.2
V
IDSX
drain-source current
VG2-S = 4 V; VDS = 5 V; RG = 120 kΩ; note 1
8
16
mA
IG1-S
gate cut-off current
VG1-S = 5 V; VG2-S = VDS = 0
−
50
nA
IG2-S
gate cut-off current
VG2-S = 4 V; VG1-S = VDS = 0
−
20
nA
Note
1. RG1 connects gate 1 to VGG = 5 V.
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 12 mA; per MOS-FET (1); unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
yfs
forward transfer admittance
Tj = 25 °C
25
30
40
mS
Cig1-ss
input capacitance at gate 1
f = 1 MHz
−
1.7
2.2
pF
Cig2-ss
input capacitance at gate 2
f = 1 MHz
−
3.3
−
pF
Coss
output capacitance
f = 1 MHz
−
0.85
−
pF
Crss
reverse transfer capacitance
f = 1 MHz
−
15
−
fF
Gtr
power gain
f = 200 MHz; GS = 2 mS; BS = BS(opt);
GL = 0.5 mS; BL = BL(opt); note 1
30
34
38
dB
f = 400 MHz; GS = 2 mS; BS = BS(opt);
GL = 1 mS; BL = BL(opt); note 1
26
30
34
dB
f = 800 MHz; GS = 3.3 mS; BS = BS(opt); 21
GL = 1 mS; BL = BL(opt); note 1
25
29
dB
NF
Xmod
noise figure
cross-modulation
f = 10.7 MHz; GS = 20 mS; BS = 0
−
9
11
dB
f = 400 MHz; YS = YS(opt)
−
0.9
1.5
dB
f = 800 MHz; YS = YS(opt)
−
1.1
1.8
dB
input level for k = 1% at 0 dB AGC;
fw = 50 MHz; funw = 60 MHz; note 2
90
−
−
dBµV
input level for k = 1% at 10 dB AGC;
fw = 50 MHz; funw = 60 MHz; note 2
−
92
−
dBµV
input level for k = 1% at 40 dB AGC;
fw = 50 MHz; funw = 60 MHz; note 2
100
105
−
dBµV
Notes
1. For the MOS-FET not in use: VG1-S = 0; VDS = 0.
2. Measured in Fig.19 test circuit.
2001 Apr 25
4
Philips Semiconductors
Product specification
Dual N-channel dual gate MOS-FET
BF1204
ALL GRAPHS FOR ONE MOS-FET
MCD952
20
handbook, halfpage
VG2-S = 4 V
ID
(mA)
2.5 V
3.5 V
16
VG1-S = 1.5 V
ID
(mA)
2V
3V
MCD953
24
handbook, halfpage
1.4 V
16
12
1.3 V
1.5 V
8
1.2 V
1.1 V
8
1V
4
1V
0.9 V
0
0.4
0
0.8
1.2
0
1.6
2
VG1-S (V)
0
VDS = 5 V.
Tj = 25 °C.
2
4
6
8
10
VDS (V)
VG2-S = 4 V.
Tj = 25 °C.
Fig.3 Transfer characteristics; typical values.
Fig.4 Output characteristics; typical values.
MCD954
100
handbook, halfpage
VG2-S = 4 V
IG1
(µA)
MCD955
40
handbook, halfpage
3.5 V
3.5 V
yfs
(mS)
3V
80
VG2-S = 4 V
30
3V
60
2.5 V
20
2.5 V
40
2V
10
20
2V
1.5 V
1V
0
0.5
0
1
1.5
0
0
2
2.5
VG1-S (V)
4
VDS = 5 V.
Tj = 25 °C.
VDS = 5 V.
Tj = 25 °C.
Fig.5
Fig.6
Gate 1 current as a function of gate 1
voltage; typical values.
2001 Apr 25
5
8
12
16
20
ID (mA)
Forward transfer admittance as a function
of drain current; typical values.
Philips Semiconductors
Product specification
Dual N-channel dual gate MOS-FET
BF1204
MCD956
20
MCD957
16
handbook, halfpage
handbook, halfpage
ID
(mA)
ID
(mA)
16
12
12
8
8
4
4
0
0
10
0
20
30
0
40
50
IG1 (µA)
1
2
3
4
5
VGG (V)
VDS = 5 V; VG2-S = 4 V.
Tj = 25 °C.
VDS = 5 V; VG2-S = 4 V; Tj = 25 °C.
RG1 = 120 kΩ (connected to VGG); see Fig.19.
Fig.7
Fig.8
Drain current as a function of gate 1 current;
typical values.
Drain current as a function of gate 1 supply
voltage (= VGG); typical values.
MCD958
20
handbook, halfpage
RG1 = 68 kΩ
ID
(mA)
16
MCD959
16
handbook, halfpage
ID
(mA)
82 kΩ
VGG = 5 V
4.5 V
12
4V
100 kΩ
12
120 kΩ
3.5 V
150 kΩ
3V
8
180 kΩ
8
220 kΩ
4
4
0
0
0
2
4
6
VGG = VDS (V)
0
2
4
VG2-S (V)
VG2-S = 4 V; Tj = 25 °C.
RG1 connected to VGG; see Fig.19.
VDS = 5 V; Tj = 25 °C.
RG1 = 120 kΩ (connected to VGG); see Fig.19.
Fig.9
Fig.10 Drain current as a function of gate 2
voltage; typical values.
Drain current as a function of gate 1 (= VGG)
and drain supply voltage; typical values.
2001 Apr 25
6
6
Philips Semiconductors
Product specification
Dual N-channel dual gate MOS-FET
BF1204
MCD960
40
MCD961
0
handbook,
gain halfpage
handbook, halfpage
IG1
(µA)
reduction
(dB)
−10
VGG = 5 V
30
4.5 V
−20
4V
20
3.5 V
−30
3V
10
−40
−50
0
0
2
4
VG2-S (V)
6
0
1
2
3
VAGC (V)
4
VDS = 5 V; Tj = 25 °C.
RG1 = 120 kΩ (connected to VGG); see Fig.19.
VDS = 5 V; VGG = 5 V; RG1 = 120 kΩ;
f = 50 MHz; Tamb = 25 °C.
Fig.11 Gate 1 current as a function of gate 2
voltage; typical values.
Fig.12 Typical gain reduction as a function of AGC
voltage; see Fig.19.
MCD962
120
MCD963
16
handbook, halfpage
handbook, halfpage
Vunw
(dBµV)
ID
(mA)
110
12
100
8
90
4
80
0
0
10
20
30
40
50
gain reduction (dB)
0
VDS = 5 V; VGG = 5 V; RG1 = 120 kΩ;
f= 50 MHz; funw = 60 MHz; Tamb = 25 °C.
20
30
40
50
gain reduction (dB)
VDS = 5 V; VGG = 5 V; RG1 = 120 kΩ;
f = 50 MHz; Tamb = 25 °C.
Fig.13 Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values; see Fig.19.
2001 Apr 25
10
Fig.14 Drain current as a function of gain
reduction; typical values; see Fig.19.
7
Philips Semiconductors
Product specification
Dual N-channel dual gate MOS-FET
BF1204
MLD429
102
handbook, halfpage
MLD430
103
handbook, halfpage
ϕrs
(deg)
yrs
(µS)
Yis
(mS)
ϕrs
102
10
bis
−102
yrs
gis
1
10−1
10
−103
−10
10
102
1
10
103
−1
103
102
f (MHz)
f (MHz)
VDS = 5 V; VG2 = 4 V.
VDS = 5 V; VG2 = 4 V.
Fig.15 Input admittance as a function of frequency;
typical values.
Fig.16 Reverse transfer admittance and phase as
a function of frequency; typical values.
MLD431
102
handbook, halfpage
yfs
(mS)
−102
ϕfs
(deg)
yfs
MLD432
10
handbook, halfpage
Yos
(mS)
bos
1
−10
10
ϕfs
1
10
102
10−1
f (MHz)
−1
103
10−2
10
gos
102
103
f (MHz)
VDS = 5 V; VG2 = 4 V.
VDS = 5 V; VG2 = 4 V.
Fig.17 Forward transfer admittance and phase as
a function of frequency; typical values.
Fig.18 Output admittance as a function of
frequency; typical values.
2001 Apr 25
8
Philips Semiconductors
Product specification
Dual N-channel dual gate MOS-FET
BF1204
VAGC
handbook, full pagewidth
R1
10 kΩ
C1
4.7 nF
C3
4.7 nF
L1
C2
RGEN
50 Ω
R2
50 Ω
DUT
≈ 2.2 µH
RL
50 Ω
C4
4.7 nF
RG1
4.7 nF
VGG
VI
VDS
MGS315
Fig.19 Cross-modulation test set-up (for one MOS-FET).
Scattering parameters
VDS = 5 V; VG2-S = 4 V; ID = 12 mA; Tamb = 25 °C.
f
(MHz)
s21
s11
s12
s22
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
50
0.991
−3.29
2.95
175.78
0.00060
85.25
0.995
−1.44
100
0.987
−7.12
2.90
171.61
0.00119
84.74
0.994
−2.90
200
0.981
−14.21
2.86
163.45
0.00234
80.85
0.992
−5.70
300
0.969
−21.22
2.83
155.11
0.00339
75.77
0.989
−8.50
400
0.958
−28.14
2.79
147.37
0.00429
72.23
0.987
−11.25
500
0.939
−35.01
2.74
139.04
0.00508
68.24
0.983
−13.96
600
0.921
−41.75
2.68
131.35
0.00565
64.97
0.981
−16.67
700
0.898
−48.51
2.62
123.38
0.00611
61.90
0.976
−19.36
800
0.874
−54.96
2.55
115.74
0.00646
57.77
0.973
−22.04
900
0.847
−61.62
2.49
107.84
0.00662
55.04
0.969
−24.80
1000
0.817
−67.84
2.41
100.24
0.00670
52.16
0.966
−27.45
2001 Apr 25
9
Philips Semiconductors
Product specification
Dual N-channel dual gate MOS-FET
BF1204
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT363
D
E
B
y
X
A
HE
6
v M A
4
5
Q
pin 1
index
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
SOT363
2001 Apr 25
REFERENCES
IEC
JEDEC
EIAJ
SC-88
10
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
Dual N-channel dual gate MOS-FET
BF1204
DATA SHEET STATUS
DATA SHEET STATUS(1)
PRODUCT
STATUS(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 Apr 25
11
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920
France: 7 - 9 Rue du Mont Valérien, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4728 6600, Fax. +33 1 4728 6638
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Hungary: Philips Hungary Ltd., H-1119 Budapest, Fehervari ut 84/A,
Tel: +36 1 382 1700, Fax: +36 1 382 1800
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. +39 039 203 6838, Fax +39 039 203 6800
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 5F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2451, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
60/14 MOO 11, Bangna Trad Road KM. 3, Bagna, BANGKOK 10260,
Tel. +66 2 361 7910, Fax. +66 2 398 3447
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 3341 299, Fax.+381 11 3342 553
For all other countries apply to: Philips Semiconductors,
Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
SCA 72
© Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613512/02/pp12
Date of release: 2001
Apr 25
Document order number:
9397 750 08297