INTEGRATED CIRCUITS DATA SHEET UBA2024 Half-bridge power IC for CFL lamps Product specification Supersedes data of 2003 Aug 13 2004 Feb 03 Philips Semiconductors Product specification Half-bridge power IC for CFL lamps UBA2024 FEATURES GENERAL DESCRIPTION • Integrated half-bridge power transistors The UBA2024 is a high-voltage monolithic integrated circuit made in the EZ-HV SOI process. The IC is designed for driving CFL lamps in a half-bridge configuration. • Integrated bootstrap diode • Integrated low-voltage supply The IC features a soft start function, an adjustable internal oscillator and an internal drive function with a high-voltage level shifter for driving the half-bridge. • Maximum voltage of 550 V • Adjustable oscillator frequency • Soft start To guarantee an accurate 50% duty cycle, the oscillator signal is passed through a divider before being fed to the output drivers. • Minimum glow time control. APPLICATIONS • Driver for any kind of load in a half-bridge configuration • Especially for electronically self-ballasted Compact Fluorescent Lamps (CFL) for lamp currents up to 220 mA (RMS) under the restriction that the maximum junction temperature is not exceeded. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME UBA2024P DIP8 DESCRIPTION VERSION plastic dual in-line package; 8 leads (300 mil) SOT97-1 BLOCK DIAGRAM 6 UBA2024 3 VDD CONTROL VDD SW FS 7 HS 1 SWEEP AND GLOW TIME CONTROL VDD(stop) HIGH VOLTAGE LEVEL SHIFTER HIGH SIDE DRIVER 5 RC HV 8 OSCILLATOR DIVIDE-BY-2 OUT LS DEAD TIME LOW SIDE DRIVER SGND 2 4 mdb029 Fig.1 Block diagram. 2004 Feb 03 2 PGND Philips Semiconductors Product specification Half-bridge power IC for CFL lamps UBA2024 PINNING SYMBOL PIN DESCRIPTION SW 1 sweep timing input SGND 2 signal ground FS 3 high-side floating supply output PGND 4 power ground OUT 5 half-bridge output HV 6 high-voltage supply VDD 7 internal low-voltage supply output RC 8 internal oscillator input handbook, halfpage SW 1 8 RC SGND 2 7 VDD UBA2024P FS 3 6 HV PGND 4 5 OUT MCE409 Fig.2 Pin configuration DIP8 package. FUNCTIONAL DESCRIPTION Reset Supply voltage A DC reset circuit is incorporated in the high-side driver. The high-side transistor is switched off when the voltage on pin FS is below the high-side lockout voltage VFS(lock). The UBA2024 is powered by a supply voltage applied to pin HV. The IC generates its own low supply voltage for the internal circuitry and therefore, an additional external low-voltage supply is not required. Oscillation The oscillation is based upon the 555-timer function. With the external resistor ROSC and capacitor COSC (see Fig.5) a self oscillating circuit is made, where ROSC and COSC determine the oscillating frequency. Start-up state With an increase of the supply voltage on pin HV, the IC enters the start-up state. In the start-up state the high-side power transistor is not conducting and the low-side power transistor is switched on. The internal circuit is reset and the capacitors on the bootstrap pin FS and low-voltage supply pin VDD are charged. Pins RC and SW are switched to ground. The start-up state is defined until VDD = VDD(start). To realize an accurate 50% duty cycle, an internal divider is used. Due to the presence of the divider, the bridge frequency is half the oscillator frequency. The output voltage of the bridge will change at the falling edge of the signal on pin RC. The design equation for the half-bridge frequency is: Sweep mode 1 f osc = --------------------------------------------k × R OSC × C OSC The IC enters the sweep mode at the moment the voltage on pin VDD > VDD(start). The capacitor on pin SW is charged by Isweep and the half-bridge circuit starts oscillating. The circuit enters the start-up state again when the voltage on pin VDD < VDD(stop). 2004 Feb 03 An overview of the oscillator signal, internal LS and HS drive signals and the output is given in Fig.3. 3 Philips Semiconductors Product specification Half-bridge power IC for CFL lamps UBA2024 handbook, halfpage V handbook, halfpage HV VRC time 0 time 0 HS drive VDD VDD(start) time 0 time VSW LS drive VDD 0.8VRC(h) time 0 VOUT 0 half bridge fosc 2.5fnom time 0 time MDB031 fnom Fig.3 Oscillator, drivers and output signals. time 0 Vlamp Vign When entering the sweep mode, the oscillator starts at 2.5 times the nominal bridge frequency and sweeps down to the nominal bridge frequency fnom; see Fig.4. During this continuously decreasing of the frequency, the circuit approaches the resonance frequency of the load. This causes a high voltage across the load, which normally ignites the lamp. minimum glow time control Vglow Vnom time 0 tsweep MDB032 Fig.4 Start-up frequency behaviour. The sweep time tsweep is determined by the charge current Ich(sw) and the external capacitor CSW. The sweep to resonance time should be much larger than the settling time of the supply voltage on pin HV to guarantee that the full high-voltage is present at the moment of ignition. Glow time control The drawback of cold-started CFL lamps is its inherent glow time which reduces the switching lifetime of the electrodes (lamp). To make this glow phase as short as possible, the maximum power is given to the lamp during the glow time via a special control; see Fig.4. The amplitude of the RC oscillator is equal to the minimum value of VRC(h) and VSW + 0.4 × VRC(h). During the sweep time a current is flowing through the lamp electrodes for pre-heating the filaments. Non-overlap time The non-overlap time is defined as the time that both MOSFETs are not conducting. The non-overlap time is internally fixed. 2004 Feb 03 4 Philips Semiconductors Product specification Half-bridge power IC for CFL lamps UBA2024 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); all voltages are measured with respect to SGND; positive currents flow into the IC. SYMBOL VHV PARAMETER CONDITIONS high-voltage supply voltage MIN. MAX. UNIT normal operation − 373 V mains transients during 0.5 s − 550 V VFS floating supply voltage VHV VHV + 14 V VDD low-voltage output supply voltage DC supply 0 14 V IDD low-voltage output supply current peak value is internally limited; Tamb = 25 °C 0 5 mA VPGND power ground voltage referenced to SGND −1 +1 V Vi(RC) internal oscillator input voltage on pin RC Ii(RC) < 1 mA 0 VDD V Vi(SW) sweep time input voltage on pin SW Ii(SW) < 1 mA 0 VDD V repetitive SR slew rate output on pin OUT −4 +4 V/ns Tj junction temperature −40 +150 °C Tamb ambient temperature −40 +150 °C Tstg storage temperature −55 +150 °C Vesd(HBM) HBM electrostatic discharge voltage on pins HV and VDD − 1000 V SW, RC, FS and OUT − 2500 V FS − 200 V HV, VDD, SW, RC and OUT − 250 V Vesd(MM) note 1 MM electrostatic discharge voltage on pins note 2 Notes 1. In accordance with the Human Body Model (HBM): equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor. 2. In accordance with the Machine Model (MM): equivalent to discharging a 200 pF capacitor through a 1.5 kΩ series resistor and a 0.75 µH inductor. QUALITY SPECIFICATION Quality in accordance with SNW-FQ-611. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS TYP. UNIT Rth(j-a) thermal resistance from junction to ambient in free air; note 1 95 K/W Rth(j-c) thermal resistance from junction to case note 1 16 K/W Note 1. In accordance with IEC 60747-1. 2004 Feb 03 5 Philips Semiconductors Product specification Half-bridge power IC for CFL lamps UBA2024 CHARACTERISTICS Tj = 25 °C; all voltages are measured with respect to SGND; positive currents flow into the IC. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT High-voltage supply VHV high-voltage supply voltage t < 0.5 s and IHV < 30 µA 0 − 550 V VFS floating supply voltage t < 0.5 s and IFS < 30 µA 0 − 564 V VHV = 100 V; ROSC = ∞; VSW = VDD; VRC = 0 V 11.7 12.5 13.3 V VHV = 100 V; ROSC = ∞; VSW = VDD; VRC = 0 V − − 0.39 mA Low-voltage supply VDD low-voltage output supply voltage Start-up state IHV high-voltage supply current VDD(start) start of oscillation voltage 10 11 12 V VDD(stop) stop of oscillation voltage 8 8.5 9 V VDD(hys) start-stop hysteresis voltage 2 2.5 3 V Output stage RHS(on) HS transistor on-resistance VHV = 310 V; Id = 100 mA − 9.7 11 Ω RLS(on) LS transistor on-resistance Id = 100 mA − 8.5 9.4 Ω VHS(d) HS body diode forward voltage If = 200 mA 1.4 1.8 2.2 V VLS(d) LS body diode forward voltage If = 200 mA 1.2 1.6 2.0 V IHS(sat) HS transistor saturation current Vds = 30 V; Tj ≤ 125 °C; VHV = 310 V 900 − − mA ILS(sat) LS transistor saturation current Vds = 30 V; Tj ≤ 125 °C 900 − − mA Vboot bootstrap diode drop voltage If = 1 mA 0.7 1.0 1.3 V tno non overlap time 1 1.35 1.7 µs VFS(lock) floating supply lock-out voltage IFS floating supply current 3.6 4.2 4.8 V VHV = 310 V; VFS = 12.2 V 10 14 18 µA − − 60 kHz 41.32 42.68 kHz % Internal oscillator fosc frequency range bridge oscillator VSW = VDD fosc(nom) nominal frequency bridge oscillator ROSC = 100 kΩ; COSC = 220 pF; 40.05 VSW = VDD ∆fosc(nom) bridge oscillator frequency variation ROSC = 100 kΩ; COSC = 220 pF; − with temperature ∆T = −20 to +150 °C 2 − kh high-level trip point factor 0.382 0.395 0.408 VRC(h) high-level trip point voltage on pin RC 4.58 4.94 5.29 kl low-level trip point factor 0.030 0.033 0.036 VRC(low) low-level trip point voltage on pin RC VRC(l) = kl × VDD 0.367 0.413 0.458 kosc oscillator constant ROSC = 100 kΩ; COSC = 220 pF 1.065 1.1 1.135 2004 Feb 03 VRC(h) = kh × VDD 6 V V Philips Semiconductors Product specification Half-bridge power IC for CFL lamps SYMBOL UBA2024 PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Sweep function Ich(sw) charge current for sweep VSW = 0 V 215 280 345 nA tsweep sweep time CSW = 33 nF; VDD = 12.2 V 0.28 0.35 0.45 s APPLICATION INFORMATION 1.8 mH RFUS AC mains supply (230 V) D1 D2 11 W/150 mA D3 D4 FS CHB2 47 nF CFS 10 nF CBUF 4.7 uF 33 Ω HV max. 550 V LFILT 3.1 mH CHB1 47 nF CLA 1.5 nF LLA OUT 6 1 3 7 PGND VDD ROSC 110 K 5 8 CDV 100 pF SW UBA2024P 4 2 CVDD 10 nF RC CSW 33 nF COSC 180 pF SGND mdb033 Fig.5 Typical integrated CFL application with UBA2024P at f = 46 kHz. 2004 Feb 03 7 Philips Semiconductors Product specification Half-bridge power IC for CFL lamps UBA2024 PACKAGE OUTLINES DIP8: plastic dual in-line package; 8 leads (300 mil) SOT97-1 ME seating plane D A2 A A1 L c Z w M b1 e (e 1) b MH b2 5 8 pin 1 index E 1 4 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 min. A2 max. b b1 b2 c D (1) E (1) e e1 L ME MH w Z (1) max. mm 4.2 0.51 3.2 1.73 1.14 0.53 0.38 1.07 0.89 0.36 0.23 9.8 9.2 6.48 6.20 2.54 7.62 3.60 3.05 8.25 7.80 10.0 8.3 0.254 1.15 inches 0.17 0.02 0.13 0.068 0.045 0.021 0.015 0.042 0.035 0.014 0.009 0.39 0.36 0.26 0.24 0.1 0.3 0.14 0.12 0.32 0.31 0.39 0.33 0.01 0.045 Note 1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC JEITA SOT97-1 050G01 MO-001 SC-504-8 2004 Feb 03 8 EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-13 Philips Semiconductors Product specification Half-bridge power IC for CFL lamps UBA2024 The total contact time of successive solder waves must not exceed 5 seconds. SOLDERING Introduction to soldering through-hole mount packages The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg(max)). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. This text gives a brief insight to wave, dip and manual soldering. A more in-depth account of soldering ICs can be found in our “Data Handbook IC26; Integrated Circuit Packages” (document order number 9398 652 90011). Wave soldering is the preferred method for mounting of through-hole mount IC packages on a printed-circuit board. Manual soldering Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds. Soldering by dipping or by solder wave Driven by legislation and environmental forces the worldwide use of lead-free solder pastes is increasing. Typical dwell time of the leads in the wave ranges from 3 to 4 seconds at 250 °C or 265 °C, depending on solder material applied, SnPb or Pb-free respectively. Suitability of through-hole mount IC packages for dipping and wave soldering methods SOLDERING METHOD PACKAGE DIPPING WAVE CPGA, HCPGA − suitable DBS, DIP, HDIP, RDBS, SDIP, SIL suitable suitable(1) PMFP(2) − not suitable Notes 1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board. 2. For PMFP packages hot bar soldering or manual soldering is suitable. 2004 Feb 03 9 Philips Semiconductors Product specification Half-bridge power IC for CFL lamps UBA2024 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2004 Feb 03 10 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA76 © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R79/02/pp11 Date of release: 2004 Feb 03 Document order number: 9397 750 12676