Transistors 2SD0602A Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB0710A 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 1.1+0.2 –0.1 Rating Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5 V Peak collector current ICP 1 A Collector current IC 500 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1.1+0.3 –0.1 10° 0 to 0.1 Symbol 0.4±0.2 2.90+0.20 –0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter (0.65) 2 1 • Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 5° ■ Features 2.8+0.2 –0.3 1.50+0.25 –0.05 3 1: Base 2: Emitter 3: Collector JEDEC: TO-236 EIAJ: SC-59 Mini Type Package Marking Symbol: X ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit 0.1 µA Collector cutoff current ICBO VCB = 20 V, IE = 0 Collector to base voltage VCBO IC = 10 µA, IE = 0 60 V Collector to emitter voltage VCEO IC = 10 mA, IB = 0 50 V Emitter to base voltage VEBO IE = 10 µA, IC = 0 5 V Forward current transfer ratio *1 VCE = 10 V, IC = 150 mA 85 hFE2 VCE = 10 V, IC = 500 mA 40 VCE(sat) IC = 300 mA, IB = 30 mA 0.35 VCB = 10 V, IE = −50 mA, f = 200 MHz 200 hFE1 Collector to emitter saturation voltage *1 Transition frequency *2 fT Collector output capacitance VCB = 10 V, IE = 0, f = 1 MHz Cob 340 6 0.6 V MHz 15 pF Note) *1: Pulse measurement *2: Rank classification Rank Q R S No-rank hFE1 85 to 170 120 to 240 170 to 340 85 to 340 Marking symbol XQ XR XS X Product of no-rank is not classified and have no indication for rank. 1 2SD0602A Transistors PC Ta IC VCE 800 120 80 IB = 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 600 500 4 mA 400 3 mA 300 2 mA 200 1 mA 40 80 120 0 160 Ambient temperature Ta (°C) 4 8 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) 10 3 1 Ta = 75°C 25°C −25°C 0.03 0.01 0.01 0.03 0.1 1 0.3 3 4 25°C Ta = −25°C 1 160 120 80 40 −20−30 −50 −100 Emitter current IE (mA) 8 10 75°C 0.3 0.1 VCE = 10 V 250 Ta = 75°C 200 25°C 150 −25°C 100 50 0.03 0.1 0.3 1 3 0 0.01 0.03 10 6 4 2 2 3 5 10 3 10 IC = 2 mA Ta = 25°C 100 80 60 40 20 0 1 1 VCER RBE 8 0 0.3 120 IE = 0 f = 1 MHz Ta = 25°C 10 0.1 Collector current IC (A) Cob VCB 200 6 Base current IB (mA) Collector current IC (A) Collector output capacitance Cob (pF) Transition frequency fT (MHz) 2 hFE IC 3 12 VCB = 10 V Ta = 25°C 2 0 300 10 fT IE −10 200 20 IC / IB = 10 0.01 0.01 0.03 10 240 −2 −3 −5 16 30 Collector current IC (A) 0 −1 300 VBE(sat) IC IC / IB = 10 0.1 12 100 30 0.3 400 Collector to emitter voltage VCE (V) VCE(sat) IC 100 500 0 0 Forward current transfer ratio hFE 40 Collector to emitter voltage VCER (V) 0 600 100 100 0 VCE = 10 V Ta = 25°C 700 Collector current IC (mA) 160 IC IB 800 Ta = 25°C 700 200 Collector current IC (mA) Collector power dissipation PC (mW) 240 20 30 50 100 Collector to base voltage VCB (V) 1 3 10 30 100 300 1 000 Base to emitter resistance RBE (kΩ)