MOTOROLA MRF281SR1

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by MRF281/D
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for digital and analog cellular PCN and PCS base station
applications with frequencies from 1000 to 2500 MHz. Characterized for
operation Class A and Class AB at 26 volts in commercial and industrial
applications.
• Specified Two–Tone Performance @ 1930 and 2000 MHz, 26 Volts
Output Power — 4 Watts PEP
Power Gain — 11 dB
Efficiency — 30%
Intermodulation Distortion — –29 dBc
• Capable of Handling 10:1 VSWR, @ 26 Vdc,
2000 MHz, 4 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• S–Parameter Characterization at High Bias Levels
• Available in Tape and Reel. R1 Suffix = 500 Units per
12 mm, 7 inch Reel.
2000 MHz, 4 W, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 458B–03, STYLE 1
(NI–200S)
(MRF281SR1)
CASE 458C–03, STYLE 1
(NI–200Z)
(MRF281ZR1)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Gate–Source Voltage
VGS
±20
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
20
0.115
Watts
W/°C
Storage Temperature Range
Tstg
–65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Max
Unit
RθJC
5.74
°C/W
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
74
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0)
IDSS
—
—
10
µAdc
Gate–Source Leakage Current
(VGS = 20 Vdc, VDS = 0)
IGSS
—
—
1
µAdc
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10 µAdc)
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 3
MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 2002
MRF281SR1 MRF281ZR1
1
ELECTRICAL CHARACTERISTICS continued (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 20 µAdc)
VGS(th)
2.4
3.2
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 25 mAdc)
VGS(q)
3
4.1
5
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 0.1 A)
VDS(on)
0.18
0.24
0.30
Vdc
Input Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
—
5.5
—
pF
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Coss
—
3.3
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Crss
—
0.17
—
pF
Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Gps
11
12.5
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
η
30
33
—
%
Input Return Loss
(VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IRL
—
–16
–10
dB
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IMD
—
–31
–29
dBc
Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Gps
11
12.5
—
dB
η
30
—
—
%
Input Return Loss
(VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IRL
—
–16
–10
dB
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IMD
—
–31
—
dBc
Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 4 W CW, IDQ = 25 mA,
f1 = 2000.0 MHz)
Gps
10.5
12
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 4 W CW, IDQ = 25 mA,
f1 = 2000.0 MHz)
η
40
44
—
%
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 4 W CW, IDQ = 25 mA,
f1 = 2000.0 MHz, VSWR = 10:1,
All Phase Angles at Frequency of Test)
Ψ
Characteristic
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
FUNCTIONAL TESTS (In Motorola Test Fixture)
Drain Efficiency
(VDD = 26 Vdc, Pout = 4 W, IDQ = 25 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
MRF281SR1 MRF281ZR1
2
No Degradation In Output Power
MOTOROLA RF DEVICE DATA
Ω
" !
" !
!
!
f
MHz
Zin
ZOL*
Ω
Zin
Ω
1500
3.15 – j5.3
15.5 – j13.6
1600
3.1 – j3.8
14.7 – j12.5
1700
3.1 – j2.3
14.0 – j11.7
1800
3.1 – j0.7
13.4 – j11.0
1900
3.1 + j0.9
12.8 – j10.1
2000
3.1 + j2.4
12.2 – j9.2
= Complex conjugate of source impedance.
ZOL* = Complex conjugate of the optimum load
impedance at given output power, voltage,
IMD, bias current and frequency.
#
$%&'(
)*+,-
#
$%&'(
)*+,-
*.&*
/0*, 1*2
Z
in
Z
*
OL
Figure 1. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF281SR1 MRF281ZR1
3
Table 1. Common Source S–Parameters at VDS = 26 Vdc, ID = 250 mAdc
f
GHz
S11
S21
S12
S22
|S11|
∠f
dB
∠f
|S12|
∠f
|S22|
∠f
0.1
.982
-28
18.9
160
.008
73
.851
-13
0.2
.947
-52
17.0
143
.015
58
.811
-25
0.3
.912
-73
15.0
129
.019
45
.770
-33
0.4
.886
-90
12.9
117
.022
36
.741
-42
0.5
.859
-103
11.1
108
.022
28
.719
-47
0.6
.854
-114
9.69
100
.023
23
.718
-51
0.7
.841
-123
8.54
93
.022
18
.709
-56
0.8
.837
-131
7.57
87
.021
15
.714
-59
0.9
.838
-138
6.69
81
.019
12
.719
-62
1.0
.841
-143
6.01
76
.018
11
.728
-64
1.1
.840
-149
5.41
72
.015
12
.742
-66
1.2
.849
-153
4.91
68
.013
13
.745
-68
1.3
.848
-158
4.51
64
.012
18
.758
-69
1.4
.856
-162
4.12
60
.010
26
.769
-70
1.5
.858
-167
3.78
57
.009
36
.786
-70
1.6
.871
-170
3.50
54
.008
54
.797
-72
1.7
.868
-173
3.22
51
.009
69
.808
-71
1.8
.870
-176
3.00
49
.009
82
.823
-72
1.9
.872
-180
2.80
46
.011
95
.828
-72
2.0
.877
178
2.63
44
.013
104
.845
-72
2.1
.876
174
2.47
41
.015
109
.843
-72
2.2
.880
171
2.36
39
.018
111
.859
-71
2.3
.882
168
2.21
36
.021
114
.858
-72
2.4
.886
165
2.12
34
.024
114
.872
-70
2.5
.896
162
1.97
32
.027
115
.863
-70
2.6
.897
158
1.89
29
.029
117
.873
-69
MRF281SR1 MRF281ZR1
4
MOTOROLA RF DEVICE DATA
NOTES
MOTOROLA RF DEVICE DATA
MRF281SR1 MRF281ZR1
5
NOTES
MRF281SR1 MRF281ZR1
6
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
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CASE 458B–03
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(MRF281SR1)
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MOTOROLA RF DEVICE DATA
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CASE 458C–03
ISSUE D
(NI–200Z)
(MRF281ZR1)
MRF281SR1 MRF281ZR1
7
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
MOTOROLA and the
logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners.
E Motorola, Inc. 2002.
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HOME PAGE: http://www.motorola.com/semiconductors/
MRF281SR1 MRF281ZR1
8
◊
MRF281/D
MOTOROLA RF DEVICE DATA