Order this document by MRF281/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for operation Class A and Class AB at 26 volts in commercial and industrial applications. • Specified Two–Tone Performance @ 1930 and 2000 MHz, 26 Volts Output Power — 4 Watts PEP Power Gain — 11 dB Efficiency — 30% Intermodulation Distortion — –29 dBc • Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 4 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • S–Parameter Characterization at High Bias Levels • Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel. 2000 MHz, 4 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs CASE 458B–03, STYLE 1 (NI–200S) (MRF281SR1) CASE 458C–03, STYLE 1 (NI–200Z) (MRF281ZR1) MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Gate–Source Voltage VGS ±20 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 20 0.115 Watts W/°C Storage Temperature Range Tstg –65 to +150 °C Operating Junction Temperature TJ 200 °C Symbol Max Unit RθJC 5.74 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 74 — Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) IDSS — — 10 µAdc Gate–Source Leakage Current (VGS = 20 Vdc, VDS = 0) IGSS — — 1 µAdc Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 10 µAdc) NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 MOTOROLA RF DEVICE DATA Motorola, Inc. 2002 MRF281SR1 MRF281ZR1 1 ELECTRICAL CHARACTERISTICS continued (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Gate Threshold Voltage (VDS = 10 Vdc, ID = 20 µAdc) VGS(th) 2.4 3.2 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 25 mAdc) VGS(q) 3 4.1 5 Vdc Drain–Source On–Voltage (VGS = 10 Vdc, ID = 0.1 A) VDS(on) 0.18 0.24 0.30 Vdc Input Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Ciss — 5.5 — pF Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Coss — 3.3 — pF Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Crss — 0.17 — pF Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Gps 11 12.5 — dB Drain Efficiency (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) η 30 33 — % Input Return Loss (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IRL — –16 –10 dB Intermodulation Distortion (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IMD — –31 –29 dBc Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Gps 11 12.5 — dB η 30 — — % Input Return Loss (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) IRL — –16 –10 dB Intermodulation Distortion (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) IMD — –31 — dBc Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 4 W CW, IDQ = 25 mA, f1 = 2000.0 MHz) Gps 10.5 12 — dB Drain Efficiency (VDD = 26 Vdc, Pout = 4 W CW, IDQ = 25 mA, f1 = 2000.0 MHz) η 40 44 — % Output Mismatch Stress (VDD = 26 Vdc, Pout = 4 W CW, IDQ = 25 mA, f1 = 2000.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Test) Ψ Characteristic ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture) Drain Efficiency (VDD = 26 Vdc, Pout = 4 W, IDQ = 25 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) MRF281SR1 MRF281ZR1 2 No Degradation In Output Power MOTOROLA RF DEVICE DATA Ω " ! " ! ! ! f MHz Zin ZOL* Ω Zin Ω 1500 3.15 – j5.3 15.5 – j13.6 1600 3.1 – j3.8 14.7 – j12.5 1700 3.1 – j2.3 14.0 – j11.7 1800 3.1 – j0.7 13.4 – j11.0 1900 3.1 + j0.9 12.8 – j10.1 2000 3.1 + j2.4 12.2 – j9.2 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at given output power, voltage, IMD, bias current and frequency. # $%&'( )*+,- # $%&'( )*+,- *.&* /0*, 1*2 Z in Z * OL Figure 1. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF281SR1 MRF281ZR1 3 Table 1. Common Source S–Parameters at VDS = 26 Vdc, ID = 250 mAdc f GHz S11 S21 S12 S22 |S11| ∠f dB ∠f |S12| ∠f |S22| ∠f 0.1 .982 -28 18.9 160 .008 73 .851 -13 0.2 .947 -52 17.0 143 .015 58 .811 -25 0.3 .912 -73 15.0 129 .019 45 .770 -33 0.4 .886 -90 12.9 117 .022 36 .741 -42 0.5 .859 -103 11.1 108 .022 28 .719 -47 0.6 .854 -114 9.69 100 .023 23 .718 -51 0.7 .841 -123 8.54 93 .022 18 .709 -56 0.8 .837 -131 7.57 87 .021 15 .714 -59 0.9 .838 -138 6.69 81 .019 12 .719 -62 1.0 .841 -143 6.01 76 .018 11 .728 -64 1.1 .840 -149 5.41 72 .015 12 .742 -66 1.2 .849 -153 4.91 68 .013 13 .745 -68 1.3 .848 -158 4.51 64 .012 18 .758 -69 1.4 .856 -162 4.12 60 .010 26 .769 -70 1.5 .858 -167 3.78 57 .009 36 .786 -70 1.6 .871 -170 3.50 54 .008 54 .797 -72 1.7 .868 -173 3.22 51 .009 69 .808 -71 1.8 .870 -176 3.00 49 .009 82 .823 -72 1.9 .872 -180 2.80 46 .011 95 .828 -72 2.0 .877 178 2.63 44 .013 104 .845 -72 2.1 .876 174 2.47 41 .015 109 .843 -72 2.2 .880 171 2.36 39 .018 111 .859 -71 2.3 .882 168 2.21 36 .021 114 .858 -72 2.4 .886 165 2.12 34 .024 114 .872 -70 2.5 .896 162 1.97 32 .027 115 .863 -70 2.6 .897 158 1.89 29 .029 117 .873 -69 MRF281SR1 MRF281ZR1 4 MOTOROLA RF DEVICE DATA NOTES MOTOROLA RF DEVICE DATA MRF281SR1 MRF281ZR1 5 NOTES MRF281SR1 MRF281ZR1 6 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS &&& 1 $ : $ $ M )134 5)16) $)3)34 )5 3 )1661 $)3)3 ) 16)53 6 3$ 7 $ 88 9 $)3)3 6 37$$165 :/1 5)16) /)33 1 63 )1 (INSULATOR) R 1 4X 2X (LID) &&& 1 $ $ : $ Z K S (INSULATOR) &&& $ 1 $ 2 : B $ D 2X @@@ 1 $ : $ 3 $ B (FLANGE) &&& 1 $ : $ $ INCHES MIN MAX ";" "8" "" " " ""; " ""< "" 9 """ """ """ """ "" ""9 """ "" "8< ""9 "<< ";9 "< " 9 " < "9 === """ """>6? "" >6? MILLIMETERS MIN MAX < ;9 9 9; ";9 8 8 9 "" " "" " "9 "<;< <8 "" 8 ; 9<9 9;; 98;; === " "; " >6? "9;>6? 317 4 ) 6) 1 9 3/65 N (LID) E DIM A B C D E F H K M N R S Z bbb ccc F C H T A A CASE 458B–03 ISSUE D (NI–200S) (MRF281SR1) SEATING PLANE (FLANGE) &&& 1 $ : $ $ F M Y (INSULATOR) 4X Z R (LID) &&& 1 $ 1 $ : $ 3 S B (INSULATOR) &&& $ 1 $ : (FLANGE) $ 2 2X D @@@ $ 1 &&& $ B : $ 1 2X K $ : )134 5)16) $)3)34 )5 3 )1661 $)3)3 ) 16)53 6 3$ 7 $ 88 9 $)3) 5A 5)6174 1 :11$ ? 3 ) 6?6)5 ) 1 $/31 : 5)6 1 ) $)3) $ $ N DIM A B C D E F H K M N R S Y Z bbb ccc INCHES MIN MAX ";" "8" "" " " ""; " ""< "" 9 """ """ """ """ """" """ "" " ""8" "8< ""9 "<< ";9 "< " 9 " < "9 """ """ === 6>"" "">6? " >6? MILLIMETERS MIN MAX < ;9" 9 9;" ";9 8 8 9 "" " "" " """" "" <" ; "" 8 ; 9<9 9;; 98;; " " "; " === 6> "; " >6? "9;>6? (LID) H E A C A (FLANGE) MOTOROLA RF DEVICE DATA T SEATING PLANE 317 4 ) 6) 1 9 3/65 CASE 458C–03 ISSUE D (NI–200Z) (MRF281ZR1) MRF281SR1 MRF281ZR1 7 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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MOTOROLA and the logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF281SR1 MRF281ZR1 8 ◊ MRF281/D MOTOROLA RF DEVICE DATA